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International Conference on Solid State Devices and Materials (SSDM)

Coherence Properties and Charge Stability of Shallow Implanted Nitrogen Vacancy Centers in 12C enrichied Diamond

Hayate Yamano, Kanami Kato, Taisuke Kageura, Masafumi Inaba, T. Okada, Itaru Higashimata, Moriyoshi Haruyama, Takashi Tanii, Shinobu Onoda, Wataru Kada, Osamu Hanaizumi, Tokuyuki Teraji, J. Isoya, Hiroshi Kawarada

Published Sep 28, 2016• 0 citations
Publisher
DOI
10.7567/ssdm.2016.m-4-01

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Abstract We investigated the charge state stability and coherence properties of near-surface single nitrogen vacancy (NV) centers in 12 C-enriched diamond for potential use in nanoscale magnetic field sensing applications. The stability of charge states in negatively charged NV centers (NV − ) was evaluated using one of the pulsed optically detected magnetic resonance measurements, Rabi oscillation measurements. During the accumulation of Rabi oscillations, an unstable shallow NV − was converted to a neutral state. As a result, the contrast of Rabi oscillations degraded, depending on charge state stability. We stabilized the NV − state of very shallow NV centers (∼2.6 ± 1.1 nm from the surface) created by 1.2 keV nitrogen ion implantation by diamond surface modification, UV/ozone exposure, and oxygen annealing. This improvement indicates that we can suppress the upward surface band bending and surface potential fluctuations through Fermi level pinning originating from oxygen-terminated diamond surfaces.
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