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Physica Scripta

The functionality of the external electric and magnetic field on optical specifications of Rosen–Morse quantum well

Fatih Ungan, Mustafa Kemal Bahar

Published Apr 9, 2019• 3 citations
Publisher

Abstract

Abstract In this study, for the first time, we probe the influences of the external electric and magnetic field (EF and MF) on the total refractive index changes (TRICs) and the total absorption coefficients (TACs) of quantum well (QW) with the Rosen–Morse (RM) potential confinement constituting by GaAs/GaAlAs heterostructure. To do this, the bound state energies and the wave functions of the Rosen–Morse quantum well (RMQW) under the influence of the external EF and MF are determined by solving the corresponding wave equation using the diagonalization method within the framework of the effective mass approach and the parabolic band approximation. As the purpose of the present work is to find out the functionality of the external EF and MF on TRICs and TACs of RMQW, same RMQW with V 1 = 250 meV, V 2 = 228 meV, η = 0.01 cm −1 is taken into consideration throughout the work. The TRICs and TACs of RMQW in the weak and strong regimes of the external fields are discussed in detail. The present work introduces to researches that how to and in what regimes apply the EF and MFs to be considered in devices designs and applications including RMQW.

DOI
10.1088/1402-4896/ab175f

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Abstract In this study, for the first time, we probe the influences of the external electric and magnetic field (EF and MF) on the total refractive index changes (TRICs) and the total absorption coefficients (TACs) of quantum well (QW) with the Rosen–Morse (RM) potential confinement constituting by GaAs/GaAlAs heterostructure. To do this, the bound state energies and the wave functions of the Rosen–Morse quantum well (RMQW) under the influence of the external EF and MF are determined by solving the corresponding wave equation using the diagonalization method within the framework of the effective mass approach and the parabolic band approximation. As the purpose of the present work is to find out the functionality of the external EF and MF on TRICs and TACs of RMQW, same RMQW with V 1 = 250 meV, V 2 = 228 meV, η = 0.01 cm −1 is taken into consideration throughout the work. The TRICs and TACs of RMQW in the weak and strong regimes of the external fields are discussed in detail. The present work introduces to researches that how to and in what regimes apply the EF and MFs to be considered in devices designs and applications including RMQW.
Abstract In this present study, the effects of electric, magnetic, and non-resonant intense laser field (ILF) on the linear, third-order nonlinear, and total optical absorption coefficients (TOACs) and relative refractive index changes (RRICs) of GaAs quantum well, having Hulthen confinement potential, were theoretically investigated. In addition, the dependence of the nonlinear optical properties in the structure on the optical intensity of incident photon and the inverse relaxation time was also calculated. To do this research, firstly the energy eigenvalues and eigenfunctions of the structure were calculated by using the effective mass and envelope function approaches. By using these calculated subband energy levels and wave functions belonging to these levels, the nonlinear optical properties of the system were obtained via the iterative method, within the compact density matrix approach framework. The obtained numerical results show that the optical properties of the considered system depend on the externally applied fields. With the applied external electric and magnetic field, the peak positions of TOACs and RRICs shift to higher energies, and the peak magnitudes increase. The high-frequency ILF applied to the structure shifts the peak positions of TOACs and RRICs initially towards higher energies and then towards lower energies and their peak sizes increase. These results show that the optical properties of the system can be adjusted purposively by changing the magnitude of applied external fields.
Abstract In our investigation, we analyzed the variations in both linear and nonlinear optical properties of the GaAs/GaAlAs single quantum well heterostructure with modified Lennard-Jones potential under the conditions where external fields and the adjustable physical parameters of the structure are changed. We get the solution of the Schrödinger equation for identifying the subband energy levels with their wave functions taking advantage of the diagonalization method, effective mass approach, and parabolic band model. As a result, we find that the changes in the applied external fields and structure parameters have effects on the total optical absorption coefficients and total relative refractive index changes. While the optical response becomes red-shifted with the increment of applied electric, magnetic and intense laser fields and the well width, it becomes blue-shifted with the increment of the well depth.
In this study, the effects of electric and tilted magnetic fields on changes in the total absorption coefficient and the refractive index, including the linear and third-order nonlinear terms for transition between the ground and first excited level of an electron confined within the GaAs/GaAlAs quantum well, have been investigated. Furthermore, the effects of the magnetic field direction (i.e., different tilt angles) and the well parameters as well as the electric field strength on the optical properties are taken into consideration. The energy levels and wave functions of the system are calculated by using the effective mass approximation and the compact density-matrix approach is used for optical transitions. The obtained results show that the optical properties of the system are sensitive to the applied external fields and well dimensions.
Abstract We present a theoretical study on the effects of intense laser field (ILF) and static electric field on the linear and nonlinear optical properties of a cylindrical quantum dot with Rosen–Morse axial potential under the framework of effective mass and parabolic band approximations. This study also takes into account the effects of the structure parameters ( η , V 1 , and R ). The analytical expressions of the linear, third-order nonlinear and total optical absorption coefficients (TOACs) and the relative refractive index changes (RRICs) are obtained by using the compact-density-matrix approach. The results of numerical calculations show that the resonant peak position of the TOACs and RRICs shifts towards lower energies and the magnitude of the peak increases with the effect of the static electric field and ILF. In addition, it is observed that while the resonant energies of the TOACs and RRICs of system shift towards the higher (lower) energies with the enhancement of η , V 1 , they decrease with the augmentation of R . Thus, the findings of this study show that the optical properties of the structure can be adjusted by changing the magnitude of structure parameters and applied external fields.
In this study, the effects of the external fields (electric and tilted magnetic fields) and well parameters on the optical absorption coefficients in GaAs/GaAlAs multiple (five) quantum wells under the applied electric and tilted magnetic fields has been investigated theoretically. Firstly, the energy eigenvalues and eigen functions of an electron confined in multiple quantum wells are calculated by analytically from Schrödinger equation using the transfer matrix method within the effective mass approximation, Secondly, the linear, nonlinear and total intersubband optical absorptions in GaAs/GaAlAs multiple quantum wells system are studied within the compact density-matrix approach. It is shown that the parameters such as strenghts of the external fields and θ-tilted angle values not only shift the peak positions in absorption spectrum but also considerably modify their potential heights. In generally, electronic and optical properties of the quantum wells are very sensitive to the applied external fields and well parameters. Therefore, we can conclude that the effect of the external fields can be used to tune and control the optical properties of interest in the range of the far-infrared electromagnetic spectrum.
In this paper, we investigate theoretically the effects of electric field on the linear and nonlinear optical properties of Morse quantum wells considering a two-level system. The effective mass approximation and the envelope function approach are used to calculate the energy levels and wave functions. The analytical expressions of the optical properties are obtained by using the compact density-matrix approach. The linear and third-order nonlinear optical absorption coefficients and the refractive index changes are investigated as a function of the incident photon energy for several configurations of the structural parameter and the applied electric field. Numerical results, presented for a typical GaAs/AlGaAs quantum well, reveal that the electric field has a significant effect on the optical characteristics of these structures and intersubband transitions can be modified by tuning the structural range parameter of the potential.