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Quantum Information and Measurement (QIM)

New insights in phase diffusion process in a gain-switched semiconductor laser for quantum random number generation (QRNG)

Brigitta Septriani, Oliver de Vries, Markus Gräfe

Published Jan 1, 2019• 1 citation
Publisher

Abstract

We present a parametric study of QRNG using phase diffusion in gain-switched DFB laser diode. We present new theoretical findings on the maximal raw data rate and explain the advantage of pulsed regime against cw.
DOI
10.1364/qim.2019.f5a.44

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Quantum random number generation (QRNG) has become a topic of growing interest in recent years due to important applications in cryptography and simulations. Interferometric detection of phase diffusion in gain-switched single-mode semiconductor lasers is one of the main generation techniques. In this paper, we study experimentally and theoretically the phase diffusion in gain-switched discrete mode laser diodes. We derive a stochastic rate equations model for the laser electric field that avoids numerical instabilities that appear when simulating amplitude and phase equations. Measurements are performed in order to extract the parameters of our semiconductor laser. Spontaneous emission rate coupled into the lasing mode is measured as a function of the carrier number for bias currents below threshold. A quadratic dependence is obtained that permits us to evaluate the validity of the linear approximations that have been used to describe laser phase diffusion in QRNG. The good agreement between experiments and theory permits us to give a realistic quantitative description of the dynamical evolution of the phase statistics in this type of QRNGs.