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Nanomaterials

Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength

Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Giorgio Ferrari, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takahiro Shinada, Takashi Tanii, Enrico Prati

Published Mar 11, 2019• 9 citations
Publisher

Abstract

An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the μW range. The 1-μm² transistor is tuned to involve in the transport only those electrons lying in the Er-O states. The spectrally resolved photocurrent is characterized by the typical absorption line of erbium and the linear dependence of the signal over the impinging power demonstrates that the Er-doped transistor is operating far from saturation. The relatively small number of estimated photoexcited atoms (≈ 4 × 10 4 ) makes Er-dpoed silicon potentially suitable for designing resonance-based frequency selective single photon detectors at 1550 nm.

DOI
10.3390/nano9030416

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Resonant Photocurrent at 1550 nm in an Erbium Low-Doped Silicon Transistor at Room Temperature

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We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks to oxygen codoping, make it possible to observe a resonant photocurrent at telecom wavelength and at room temperature by using a supercontinuum laser source working in the μW range. By exploiting a back-gate, the transistor is tuned to exploit only the electrons lying in the Er-O states. We estimate a relatively small number of photoexcited atoms (-4×104) making Er-dpoed silicon a candidate for designing resonance-based frequency selective single photon detectors at 1550 nm for quantum communications.

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Energy transfer in erbium doped optical waveguides based on silicon

Pieter G. Kik

Energy transfer in erbium doped optical waveguides based on silicon This thesis describes the energy transfer processes\noccurring in materials that can be used for the fabrication of silicon compatible optical integrated circuits, operating at 1.54 mm.The thesis consists of three parts: Part I discusses energy transfer in optical waveguide amplifiers on silicon. The waveguide amplifiers use an intra-4f transition of the rare earth ion erbium occurring at 1.54 mm. To achieve significant amplification, high\n Er concentrations (> 10 20 cm -3 ) are required. At these concentrations Er ions can interact, resulting in co-operative\n upconversion, in which one excited Er ion is excited into a higher energy state, while a neighboring Er ion returns to the ground\n state. In Part I this and other gain limiting effects are investigated. In particular, it is shown that the atomic-scale Er distribution\n is of crucial importance for the performance of Er doped waveguide amplifiers. Part II discusses the energy transfer processes\n occurring in Er doped silicon. It is shown that Er in silicon can be excited by electron-hole pair recombination in an\n impurity-Auger effect. This effect may be used to fabricate an electrically pumped Er doped waveguide amplifier. The reverse\n process can also occur: an excited Er ion can de-excite and generate an electron-hole pair in the silicon, due to a non-radiative\n backtransfer process. This process has an efficiency of 70% at room temperature. This observation enables the fabrication of an\n Er doped photo-detector in a Si waveguide operating at 1.54 mm. The performance of such a detector is discussed. Part III\n discusses the interaction between Er and silicon nanocrystals embedded in SiO2. Si nanocrystals efficiently absorb visible light,\n resulting in the generation of quantum confined electron-hole pairs. The electron-hole pairs efficiently transfer energy to Er.\n Due to the energy transfer, the effective Er absorption cross section is five orders of magnitude larger than for direct optical\n excitation. Silicon nanocrystals may thus be used to increase the pumping efficiency of an Er doped waveguide amplifier. It is\n shown that a single nanocrystal can excite ~1 Er ion at a time and that an optical gain of 0.6 dB/cm may be achieved in a typical\n nanocrystal sensitized waveguide amplifier. Due to the broad absorption band of Si nanocrystals, a broad band light source can\n be used as pump source in such a nanocrystal sensitized Er doped waveguide amplifier.

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Erbium is a rare-earth metal that, when incorporated in a solid, can emit light at a wavelength of 1.5 μm. It plays a key role in current day telecommunication technology as the principle ingredient of optical fiber amplifiers. In this thesis the control of the Er spontaneous emission in three different types of microphotonic materials is described. Part I of this thesis focuses on the effect of a metallo-dielectric interface on the spontaneous emission of optical emitters in silica glass. It is shown that Er ions near a Ag interface can couple to surface plasmons (SPs) via a near-field interaction. By coupling SPs out into the far field, large changes in the Er photoluminescence emission distribution, spectra, and polarization can be observed. The excitation of SPs also results in an increase of the Er photoluminescence decay rate. The observed decay rates are in good agreement with calculations based on a classical dipole oscillator model. From the change in photoluminescence decay rate of Si nanocrystals near a Ag interface it is shown that Si nanocrystals can efficiently excite SPs and have an internal quantum efficiency of 77 %. Part II focuses on the effect of a microcavity on the spontaneous emission of Er and describes how ion implantation can be used to dope dielectric microresonators with optically active Er ions. The fabrication and characterization of an Er ion-implanted silica microsphere resonator is described that shows lasing at 1.5 μm when pumped above its lasing threshold. Ion implantation is also used to dope toroidal microcavities on a Si chip with Er. The microtoroids are doped by either pre-implantation into the SiO2 base material, or by post-implantation in a fully fabricated microtoroid. The optical activation of Er ions in the microtoroid is investigated and Er lasing at 1.5 μm is observed for both types of microcavities with the lowest threshold (4.5 μW) for the pre-implanted microtoroids. Part III describes the fabrication of an Er-doped Si-inverse opal photonic crystal. These photonic crystals can potentially have a photonic bandgap that can fully inhibit the spontaneous emission of on optical emitter. Fabrication criteria are derived for such a photonic crystal, based on the lattice parameter, filling fraction, and Si refractive index. In the opal photonic crystal composed of both Si and SiO2 we show that Er ions can be selectively excited in both the Si and SiO2 part of the photonic crystal by changing the excitation wavelength and/or the measurement temperature.

•Mar 9, 2005•3 citations

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Observation of Transparency of Erbium-doped Silicon nitride in photonic crystal nanobeam cavities

Yiyang Gong, Maria Makarova, Selçuk Yerci +6 more

One dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer. Photoluminescence from the cavities around 1.54 microm is studied at cryogenic and room temperatures at different optical pump powers. The resonators demonstrate Purcell enhanced absorption and emission rates, also confirmed by time resolved measurements. Resonances exhibit linewidth narrowing with pump power, signifying absorption bleaching and the onset of stimulated emission in the material at both 5.5 K and room temperature. We estimate from the cavity linewidths that Er has been pumped to transparency at the cavity resonance wavelength.

arXiv:1003.1801•Optics Express•Jun 14, 2010•27 citations
An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the μW range. The 1-μm² transistor is tuned to involve in the transport only those electrons lying in the Er-O states. The spectrally resolved photocurrent is characterized by the typical absorption line of erbium and the linear dependence of the signal over the impinging power demonstrates that the Er-doped transistor is operating far from saturation. The relatively small number of estimated photoexcited atoms (≈ 4 × 10 4 ) makes Er-dpoed silicon potentially suitable for designing resonance-based frequency selective single photon detectors at 1550 nm.
We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks to oxygen codoping, make it possible to observe a resonant photocurrent at telecom wavelength and at room temperature by using a supercontinuum laser source working in the μW range. By exploiting a back-gate, the transistor is tuned to exploit only the electrons lying in the Er-O states. We estimate a relatively small number of photoexcited atoms (-4×104) making Er-dpoed silicon a candidate for designing resonance-based frequency selective single photon detectors at 1550 nm for quantum communications.
Energy transfer in erbium doped optical waveguides based on silicon This thesis describes the energy transfer processes\noccurring in materials that can be used for the fabrication of silicon compatible optical integrated circuits, operating at 1.54 mm.The thesis consists of three parts: Part I discusses energy transfer in optical waveguide amplifiers on silicon. The waveguide amplifiers use an intra-4f transition of the rare earth ion erbium occurring at 1.54 mm. To achieve significant amplification, high\n Er concentrations (> 10 20 cm -3 ) are required. At these concentrations Er ions can interact, resulting in co-operative\n upconversion, in which one excited Er ion is excited into a higher energy state, while a neighboring Er ion returns to the ground\n state. In Part I this and other gain limiting effects are investigated. In particular, it is shown that the atomic-scale Er distribution\n is of crucial importance for the performance of Er doped waveguide amplifiers. Part II discusses the energy transfer processes\n occurring in Er doped silicon. It is shown that Er in silicon can be excited by electron-hole pair recombination in an\n impurity-Auger effect. This effect may be used to fabricate an electrically pumped Er doped waveguide amplifier. The reverse\n process can also occur: an excited Er ion can de-excite and generate an electron-hole pair in the silicon, due to a non-radiative\n backtransfer process. This process has an efficiency of 70% at room temperature. This observation enables the fabrication of an\n Er doped photo-detector in a Si waveguide operating at 1.54 mm. The performance of such a detector is discussed. Part III\n discusses the interaction between Er and silicon nanocrystals embedded in SiO2. Si nanocrystals efficiently absorb visible light,\n resulting in the generation of quantum confined electron-hole pairs. The electron-hole pairs efficiently transfer energy to Er.\n Due to the energy transfer, the effective Er absorption cross section is five orders of magnitude larger than for direct optical\n excitation. Silicon nanocrystals may thus be used to increase the pumping efficiency of an Er doped waveguide amplifier. It is\n shown that a single nanocrystal can excite ~1 Er ion at a time and that an optical gain of 0.6 dB/cm may be achieved in a typical\n nanocrystal sensitized waveguide amplifier. Due to the broad absorption band of Si nanocrystals, a broad band light source can\n be used as pump source in such a nanocrystal sensitized Er doped waveguide amplifier.
One-dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer.Photoluminescence from the cavities around 1.54 µm is studied at cryogenic and room temperatures at different optical pump powers.The resonators demonstrate Purcell enhanced absorption and emission rates, also confirmed by time-resolved measurements.Resonances exhibit linewidth narrowing with pump power, signifying absorption bleaching and the onset of stimulated emission in the material at both 5.5 K and room temperature.We estimate from the cavity linewidths that Er has been pumped to transparency at the cavity resonance wavelength.
Erbium is a rare-earth metal that, when incorporated in a solid, can emit light at a wavelength of 1.5 μm. It plays a key role in current day telecommunication technology as the principle ingredient of optical fiber amplifiers. In this thesis the control of the Er spontaneous emission in three different types of microphotonic materials is described. Part I of this thesis focuses on the effect of a metallo-dielectric interface on the spontaneous emission of optical emitters in silica glass. It is shown that Er ions near a Ag interface can couple to surface plasmons (SPs) via a near-field interaction. By coupling SPs out into the far field, large changes in the Er photoluminescence emission distribution, spectra, and polarization can be observed. The excitation of SPs also results in an increase of the Er photoluminescence decay rate. The observed decay rates are in good agreement with calculations based on a classical dipole oscillator model. From the change in photoluminescence decay rate of Si nanocrystals near a Ag interface it is shown that Si nanocrystals can efficiently excite SPs and have an internal quantum efficiency of 77 %. Part II focuses on the effect of a microcavity on the spontaneous emission of Er and describes how ion implantation can be used to dope dielectric microresonators with optically active Er ions. The fabrication and characterization of an Er ion-implanted silica microsphere resonator is described that shows lasing at 1.5 μm when pumped above its lasing threshold. Ion implantation is also used to dope toroidal microcavities on a Si chip with Er. The microtoroids are doped by either pre-implantation into the SiO2 base material, or by post-implantation in a fully fabricated microtoroid. The optical activation of Er ions in the microtoroid is investigated and Er lasing at 1.5 μm is observed for both types of microcavities with the lowest threshold (4.5 μW) for the pre-implanted microtoroids. Part III describes the fabrication of an Er-doped Si-inverse opal photonic crystal. These photonic crystals can potentially have a photonic bandgap that can fully inhibit the spontaneous emission of on optical emitter. Fabrication criteria are derived for such a photonic crystal, based on the lattice parameter, filling fraction, and Si refractive index. In the opal photonic crystal composed of both Si and SiO2 we show that Er ions can be selectively excited in both the Si and SiO2 part of the photonic crystal by changing the excitation wavelength and/or the measurement temperature.
The demand for single photon emitters at λ=1.54 μm, which follows from the consistent development of quantum networks based on optical fiber technologies, makes Er:Ox centers in Si a viable resource, thanks to the I13/24→I415/2 optical transition of Er3+. While its implementation in high-power applications is hindered by the extremely low emission rate, the study of such systems in the low concentration regime remains relevant for quantum technologies. In this Letter, we explore the room-temperature photoluminescence at the telecomm wavelength from very low implantation doses of Er:Ox in Si. The lower-bound number of optically active Er atoms detected is of the order of 102, corresponding to a higher-bound value for the emission rate per individual ion of about 104 s−1.
One dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer. Photoluminescence from the cavities around 1.54 microm is studied at cryogenic and room temperatures at different optical pump powers. The resonators demonstrate Purcell enhanced absorption and emission rates, also confirmed by time resolved measurements. Resonances exhibit linewidth narrowing with pump power, signifying absorption bleaching and the onset of stimulated emission in the material at both 5.5 K and room temperature. We estimate from the cavity linewidths that Er has been pumped to transparency at the cavity resonance wavelength.