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Journal of the Optical Society of America B

Hysteresis in the spontaneous emission induced by VO2 phase change

Daniela Szilard, Wilton J. M. Kort-Kamp, Felipe S. S. Rosa, F. A. Pinheiro, Carlos Farina

Published Mar 5, 2019• 18 citations
Publisher

Abstract

We investigate the spontaneous emission of a two-level quantum emitter in the vicinity of a vanadium dioxide (VO2) thin film. By taking advantage of effective medium techniques to describe the dielectric constant of the VO2, we demonstrate that, in the near-field regime, the spontaneous emission rate of both electric and magnetic dipole emitters can be maximized at the insulator-to-metal phase transition temperature of the film. We find that VO2’s thermal hysteresis curve produces clear fingerprints in the emitter’s decay process, offering a new degree of freedom to dynamically control light emission at the nanoscale. We also find that the spontaneous emission rate is a non-monotonic function of the emitter transition wavelength, presenting a pronounced peak at infrared frequencies. Altogether, our results reveal that VO2 phase transition is a promising mechanism to achieve on-demand tuning of an emitter’s lifetime.

DOI
10.1364/josab.36.000c46

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Journal of Nanophotonics•Aug 19, 2017•7 citations
We investigate the spontaneous emission of a two-level quantum emitter in the vicinity of a vanadium dioxide (VO2) thin film. By taking advantage of effective medium techniques to describe the dielectric constant of the VO2, we demonstrate that, in the near-field regime, the spontaneous emission rate of both electric and magnetic dipole emitters can be maximized at the insulator-to-metal phase transition temperature of the film. We find that VO2’s thermal hysteresis curve produces clear fingerprints in the emitter’s decay process, offering a new degree of freedom to dynamically control light emission at the nanoscale. We also find that the spontaneous emission rate is a non-monotonic function of the emitter transition wavelength, presenting a pronounced peak at infrared frequencies. Altogether, our results reveal that VO2 phase transition is a promising mechanism to achieve on-demand tuning of an emitter’s lifetime.
The active modulation of optical response of quantum emitters at the nanoscale is of paramount importance to realize tunable light sources for nanophotonic devices. Herein, a thin film of phase‐change material (VO2) is coupled to a 20 nm‐thick silica layer embedding Er3+ ions, and it is demonstrated how the active tuning of the local density of optical states near the erbium emitters provided by the thermally induced semiconductor‐to‐metal transition of VO2 can be used to dynamically control the Er3+ emission lifetime at telecom wavelength (1.54 μm). A decay rate contrast of a factor 2 is obtained between high temperature (90 °C), when VO2 is metallic, and room temperature, when VO2 is semiconductor, in agreement with calculations performed with the classical dipole oscillator analytical model. A hysteretic behavior is observed by measuring the Er3+ lifetime as a function of the temperature, whose parameters are consistent with those of grazing incidence X‐ray diffraction and optical transmittance measurements. The fractions of Er3+ ions that couple with VO2 in each phase at the different temperatures are determined by the analysis of the temporal decays. The results make the investigated system an optimal candidate for the development of tunable photon sources at telecom wavelength.
We investigate the influence of phase transitions on the behavior of collective quantum emission. We discuss two distinct physical processes, the center-of-mass decoherence of a single emitter, and the collective emission of two emitters, addressed with an unified formalism relying on standard perturbation theory. Two specific examples of phase transitions are considered: the percolation transition in a metal-dielectric composite, and the metal-insulator transition in VO2{\mathrm{VO}}_{2}VO2​. The decoherence and the collective emission rates can be decomposed as a sum of two contributions, accounting for the spontaneous emission and for interference effects, respectively. The former is enhanced by the Purcell effect for emitter(s) in the vicinity of the critical medium. The latter, associated with quantum interferences, experiences a ``sudden death'' near the critical point of the phase transition. Our findings unveil the interplay between the Purcell and collective effects and its dependence on metal-insulator transitions. In the case of VO2{\mathrm{VO}}_{2}VO2​, decoherence and collective emission rates exhibit a characteristic hysteresis that strongly depends on the material temperature. These results, based on experimental data, suggest that VO2{\mathrm{VO}}_{2}VO2​ could be explored as a versatile material platform where decoherence and collective emission can be tuned by varying the temperature.
We theoretically investigate the bistable spontaneous emission behavior of a single emitter in the vicinity of a hybrid V O 2 –Au nanoshell. The hybrid nanoshell is illuminated by a continuous wave pump laser. The incident beam generates heat through light absorption and causes the V O 2 to undergo a phase change from semiconductor to metallic mode. Our calculation shows that for certain values, over a range of incident laser intensity [ 0.25 ( G W / m 2 ) < I < 0.84 ( G W / m 2 )], at the resonance wavelength of the V O 2 (semiconductor)–Au nanoshell ( λ = 630 n m ), there is a reasonable bistable contrast for the two spontaneous emission rate values: the radiative and nonradiative decay rates. Our results provide important general guidelines for enabling platforms for optical switching sources and tunable sensors.
Modulation is a cornerstone of optical communication, and as such, governs the overall speed of data transmission. Currently, the two main strategies for modulating light are direct modulation of the excited emitter population (for example, using semiconductor lasers) and external optical modulation (for example, using Mach-Zehnder interferometers or ring resonators). However, recent advances in nanophotonics offer an alternative approach to control spontaneous emission through modifications to the local density of optical states. Here, by leveraging the phase-change of a vanadium dioxide nanolayer, we demonstrate broadband all-optical direct modulation of 1.5 μm emission from trivalent erbium ions more than three orders of magnitude faster than their excited state lifetime. This proof-of-concept demonstration shows how integration with phase-change materials can transform widespread phosphorescent materials into high-speed optical sources that can be integrated in monolithic nanoscale devices for both free-space and on-chip communication.
Summary form only given. Over the last three decades of the 20 th century many experiments have demonstrated that the rate of spontaneous emission for an emitter is determined by its electromagnetic surrounding. This phenomenon has been usually studied for atoms or molecules placed in the vicinity of mirrors or in optical resonators. Furthermore, it is also well-known that the fluorescence lifetime of an emitter changes after being embedded in dielectric media where aside from a change in the refractive index, it experiences the local fields in the dielectric. For a spherical medium larger than the order of a wavelength it is known that the coupling to Mie modes of this dielectric resonator has a large influence on the emission rate of an emitter inside. However, when the medium becomes comparable or smaller than a wavelength one can no longer speak of resonator modes. Here we report on an experiment where we have studied the variation of the spontaneous emission rate as the dielectric medium surrounding an emitter is made smaller and smaller down to a few nanometers.
We numerically investigate the electromagnetically induced transparency (EIT) of a hybrid system consisting of a three-level quantum dot (QD) in the vicinity of vanadium dioxide nanoparticle (VO2NP). VO2NP has semiconductor and metallic phases where the transition between the two phases occurs around a critical temperature. When the QD-VO2NP hybrid system interacts with continuous wave laser fields in an infrared regime, it supports a coherent coupling of exciton–polariton and exciton–plasmon polariton in semiconductor and metal phases of VO2NP, respectively. In our calculations a filling fraction factor controls the VO2NP phase transition. A probe and control laser field configuration is studied for the hybrid system to measure the absorption of QD through the filling fraction factor manipulations. We show that for the VO2NP semiconductor phase and proper geometrical configuration, the absorption spectrum profile of the QD represents an EIT with two peaks and a clear minimum. These two peaks merge to one through the VO2NP phase transition to metal. We also show that the absorption spectrum profile is modified by different orientations of the laser fields with the axis of the QD-VO2NP hybrid system. The innovation in comparison to other research in the field is that robust variation in the absorption profile through EIT is due to the phase transition in VO2NP without any structural change in the QD-VO2NP hybrid system. Our results can be employed to design nanothermal sensors, optical nanoswitches, and energy transfer devices.