Superconducting transmon qubits are of great interest for quantum computing and quantum simulation. A key component of quantum chemistry simulation algorithms is breaking up the evolution into small steps, which naturally leads to the need for nonmaximally entangling, arbitrary CPHASE gates. Here we design such microwave-based gates using an analytically solvable approach leading to smooth, simple pulses. We use the local invariants of the evolution operator in SU(4) to develop a method of constructing pulse protocols, which allows for the continuous tuning of the phase. We find CPHASE fidelities of more than 0.999 and gate times as low as 100 ns.Superconducting transmon qubits are of great interest for quantum computing and quantum simulation. A key component of quantum chemistry simulation algorithms is breaking up the evolution into small steps, which naturally leads to the need for nonmaximally entangling, arbitrary CPHASE gates. Here we design such microwave-based gates using an analytically solvable approach leading to smooth, simple pulses. We use the local invariants of the evolution operator in SU(4) to develop a method of constructing pulse protocols, which allows for the continuous tuning of the phase. We find CPHASE fidelities of more than 0.999 and gate times as low as 100 ns.

arXiv:1903.00969Physical review. B./Physical review. BFeb 20, 202012 citations

Microwave-activated gates between a fluxonium and a transmon qubit

Alessandro Ciani, Boris Varbanov, N. Jolly +2 more

We propose and analyze two types of microwave-activated gates between a fluxonium and a transmon qubit, namely a cross-resonance (CR) and a CPHASE gate. The large frequency difference between a transmon and a fluxonium makes the realization of a two-qubit gate challenging. For a medium-frequency fluxonium qubit, the transmon-fluxonium system allows for a cross-resonance effect mediated by the higher levels of the fluxonium over a wide range of transmon frequencies. This allows one to realize the cross-resonance gate by driving the fluxonium at the transmon frequency, mitigating typical problems of the cross-resonance gate in transmon-transmon chips related to frequency targeting and residual $ZZ$ coupling. However, when the fundamental frequency of the fluxonium enters the low-frequency regime below $100\phantom{\rule{0.16em}{0ex}}\mathrm{MHz}$ , the cross-resonance effect decreases leading to long gate times. For this range of parameters, a fast microwave CPHASE gate can be implemented using the higher levels of the fluxonium. In both cases, we perform numerical simulations of the gate showing that a gate fidelity above $99%$ can be obtained with gate times between 100 and $300\phantom{\rule{0.16em}{0ex}}\mathrm{ns}$ . Next to a detailed gate analysis, we perform a study of chip yield for a surface code lattice of fluxonia and transmons interacting via the proposed cross-resonance gate. We find a much better yield as compared to a transmon-only architecture with the cross-resonance gate as native two-qubit gate.We propose and analyze two types of microwave-activated gates between a fluxonium and a transmon qubit, namely a cross-resonance (CR) and a CPHASE gate. The large frequency difference between a transmon and a fluxonium makes the realization of a two-qubit gate challenging. For a medium-frequency fluxonium qubit, the transmon-fluxonium system allows for a cross-resonance effect mediated by the higher levels of the fluxonium over a wide range of transmon frequencies. This allows one to realize the cross-resonance gate by driving the fluxonium at the transmon frequency, mitigating typical problems of the cross-resonance gate in transmon-transmon chips related to frequency targeting and residual $ZZ$ coupling. However, when the fundamental frequency of the fluxonium enters the low-frequency regime below $100\phantom{\rule{0.16em}{0ex}}\mathrm{MHz}$, the cross-resonance effect decreases leading to long gate times. For this range of parameters, a fast microwave CPHASE gate can be implemented using the higher levels of the fluxonium. In both cases, we perform numerical simulations of the gate showing that a gate fidelity above $99%$ can be obtained with gate times between 100 and $300\phantom{\rule{0.16em}{0ex}}\mathrm{ns}$. Next to a detailed gate analysis, we perform a study of chip yield for a surface code lattice of fluxonia and transmons interacting via the proposed cross-resonance gate. We find a much better yield as compared to a transmon-only architecture with the cross-resonance gate as native two-qubit gate.

arXiv:2206.06203Physical Review ResearchNov 22, 20228 citations

Quantum Computing with Transmon Qubits

Maika Takita

The Japan Society of Applied PhysicsJan 28, 20200 citations

Microwave-activated gates between a fluxonium and a transmon qubit

Alessandro Ciani, Boris Varbanov, N. Jolly +2 more

We propose and analyze two types of microwave-activated gates between a fluxonium and a transmon qubit, namely a cross-resonance (CR) and a CPHASE gate. The large frequency difference between a transmon and a fluxonium makes the realization of a two-qubit gate challenging. For a medium-frequency fluxonium qubit, the transmon-fluxonium system allows for a cross-resonance effect mediated by the higher levels of the fluxonium over a wide range of transmon frequencies. This allows one to realize the cross-resonance gate by driving the fluxonium at the transmon frequency, mitigating typical problems of the cross-resonance gate in transmon-transmon chips related to frequency targeting and residual ZZ coupling. However, when the fundamental frequency of the fluxonium enters the low-frequency regime below 100 MHz, the cross-resonance effect decreases leading to long gate times. For this range of parameters, a fast microwave CPHASE gate can be implemented using the higher levels of the fluxonium. In both cases, we perform numerical simulations of the gate showing that a gate fidelity above 99% can be obtained with gate times between 100 and 300 ns. Next to a detailed gate analysis, we perform a study of chip yield for a surface code lattice of fluxonia and transmons interacting via the proposed cross-resonance gate. We find a much better yield as compared to a transmon-only architecture with the cross-resonance gate as native two-qubit gate.We propose and analyze two types of microwave-activated gates between a fluxonium and a transmon qubit, namely a cross-resonance (CR) and a CPHASE gate. The large frequency difference between a transmon and a fluxonium makes the realization of a two-qubit gate challenging. For a medium-frequency fluxonium qubit, the transmon-fluxonium system allows for a cross-resonance effect mediated by the higher levels of the fluxonium over a wide range of transmon frequencies. This allows one to realize the cross-resonance gate by driving the fluxonium at the transmon frequency, mitigating typical problems of the cross-resonance gate in transmon-transmon chips related to frequency targeting and residual ZZ coupling. However, when the fundamental frequency of the fluxonium enters the low-frequency regime below 100 MHz, the cross-resonance effect decreases leading to long gate times. For this range of parameters, a fast microwave CPHASE gate can be implemented using the higher levels of the fluxonium. In both cases, we perform numerical simulations of the gate showing that a gate fidelity above 99% can be obtained with gate times between 100 and 300 ns. Next to a detailed gate analysis, we perform a study of chip yield for a surface code lattice of fluxonia and transmons interacting via the proposed cross-resonance gate. We find a much better yield as compared to a transmon-only architecture with the cross-resonance gate as native two-qubit gate.

Jan 1, 20220 citations

ZZ

coupling. However, when the fundamental frequency of the fluxonium enters the low-frequency regime below

100\phantom{\rule{0.16em}{0ex}}\mathrm{MHz}

, the cross-resonance effect decreases leading to long gate times. For this range of parameters, a fast microwave CPHASE gate can be implemented using the higher levels of the fluxonium. In both cases, we perform numerical simulations of the gate showing that a gate fidelity above

99%

can be obtained with gate times between 100 and

300\phantom{\rule{0.16em}{0ex}}\mathrm{ns}

. Next to a detailed gate analysis, we perform a study of chip yield for a surface code lattice of fluxonia and transmons interacting via the proposed cross-resonance gate. We find a much better yield as compared to a transmon-only architecture with the cross-resonance gate as native two-qubit gate.