Hybrid circuit quantum electrodynamics (cQED) aims at coupling various quantum degrees of freedom, among which are spin and charge degrees of freedom in gate defined quantum dots, phonons or magnons... with quantized electromagnetic fields in superconducting microwave cavities to investigate fundamental physics questions or for quantum computation and simulation. However, low microwave losses, key for many hybrid cQED experiments, are challenging to achieve given the often exotic and/or complex material stacks (e.g. semiconducting material, ferromagnets, or piezoelectric materials) required to host the various quantum degrees of freedom. In this work, we present a 3D-integration process to overcome this challenge for semi-industrial silicon MOS spin qubits. The process is based on dense indium bump interconnects at a pitch of 10
μm and superconducting thin films of Niobium Nitride (NbN). First, we report on DC and RF interconnect properties that demonstrate a high galvanic interconnection yield and internal quality factors above
105 in the single photon regime for NbN resonators interrupted by a single indium bump interconnect. Eventually, we fabricated a 3D-integrated hybrid circuit quantum electrodynamics (cQED) device based on a semi-industrial MOS hole double quantum dot and a high impedance NbN resonator. For this device, we report a cavity internal quality factor above 10000 and demonstrate record sensitivity for gate-based dispersive readout of the charge degree of freedom with an SNR of 100 in 300 ns. Finally, we demonstrate strong spin-photon coupling of
gs/2π = 75 MHz, which highlights the viability of 3D-integration for quantum dot based hybrid spin circuit quantum electrodynamics and opens to high-fidelity spin readout and microwave photon-based remote spin qubit entanglement.
Coherent and strong coupling between photons and solid-state qubits, in the form of circuit quantum electrodynamics (QED), has been harnessed for two-qubit gates mediated by photons and high-fidelity quantum non-demolition readout, which are the building blocks of large-scale quantum computation. Recently, circuit QED has been extended to gate-defined semiconductor quantum dots. In this thesis, we develop a novel hybrid circuit QED architecture composed of a high-impedance superconducting microwave resonator and spins localized in silicon-MOS quantum dots. To control and measure the spin degrees of freedom, this hybrid system needs to operate at finite magnetic field. Consequently, we develop and characterize microwave resonators based on thin niobium nitride (NbN) films featuring a high kinetic inductance. We demonstrate high-impedance resonators with magnetic field resilience and low photon loss rates. We then co-integrate the NbN resonators on silicon spin qubit chips. With a hole confined in a double quantum dot (DQD), we report the first realization of a strong hole charge-photon interaction bordering the ultra-strong coupling regime. At finite magnetic field, putting the spin transition energy in resonance with the microwave cavity, we observe large vacuum Rabi mode splittings, signature of a strong spin-photon coupling. Our findings are well captured by the modelling of a hole DQD with different anisotropic Zeeman response in each dot and spin-orbit coupling dependent tunnel rates. We also find a sizeable spin-photon coupling when the hole is localized in the single quantum dot, in line with recent theoretical predictions. The different works presented in this manuscript pave the way for circuit QED with hole spins in gate-defined semiconductor quantum dots.