Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Asia Communications and Photonics Conference

Nonlinear Gain and Optical Bistability in Novel GaInNAs Vertical-Cavity Semiconductor Optical Amplifiers

Yun Jin Sun, M.J. Adams, Meng Xun, Dexin Wu, Jin Zhi, Xinyu Liu

Published Oct 1, 2018• 0 citations
Publisher

Abstract

The nonlinear gain properties of GaInNAs vertical-cavity semiconductor optical amplifier operated in reflection mode are reported. A step-like differential gain and the anticlockwise bistability are predicted. The dependence of the optical bistability on the applied current and phase detuning are analyzed.
DOI
10.1109/acp.2018.8596015

Related papers

Bistability and nonlinear gain in 1.55μm vertical cavity semiconductor optical amplifiers: Theory and experiments

Antonio Hurtado, Ian D. Henning, M.J. Adams

We report experimental measurements of power and wavelength optical bistability and nonlinear gain in two 1.55μm vertical-cavity semiconductor optical amplifiers operated in reflection. Anticlockwise and clockwise nonlinear switching and bistability, both with high on-off contrast ratio up to 3.5:1, have been observed in the optical power and wavelength domains. Theoretical modeling gives excellent agreement with the experimental measurements.

Applied Physics Letters•Oct 8, 2007•27 citations

Optical Bistability and Nonlinear Gain in a 1550 nm-Vertical Cavity Semiconductor Optical Amplifier (VCSOA) with High On-Off Contrast Ratio

Antonio Hurtado, Ian D. Henning, M.J. Adams

This paper reports on the experimental observation of power and wavelength optical bistability (OB) and nonlinear gain in a 1550 nm- vertical cavity semiconductor optical amplifier (VCSOA) biased just below threshold and operated in reflection. Two different shapes of power and wavelength OB and nonlinear gain, anticlockwise and clockwise, have been experimentally observed, both with high on-off contrast ratio.

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)•Jun 1, 2007•0 citations

Optical bistability and nonlinear gain in 1.55 µm VCSOA

Antonio Hurtado, Ana Pilar Gonzalez-Marcos, Ian D. Henning +1 more

An experimental observation of power and wavelength optical bistability and nonlinear gain in a 1550 nm vertical-cavity semiconductor optical amplifier (VCSOA) operated in reflection and biased above and below threshold is reported. Two distinct types of optical bistability, clockwise and anticlockwise, are observed.

Electronics Letters•Apr 13, 2006•19 citations

Reflective optical bistability and nonlinear switching in a 1550-nm vertical-cavity semiconductor optical amplifier (VCSOA)

Antonio Hurtado, Ian D. Henning, M.J. Adams

We report experimental measurements of Optical Bistability (OB) and nonlinear switching in a 1550 nm-Vertical-Cavity Semiconductor Optical Amplifier (VCSOA) operated in reflection and biased below and above its threshold current. Two different types of OB and nonlinear switching, anticlockwise and clockwise, have been observed in both the optical power and wavelength domain. The influence of important parameters including the bias current, the initial wavelength detuning and the optical input power has also been studied. The existence of diverse forms of OB and nonlinear switching in a VCSOA operated in reflection opens the door for the development of inverting and non-inverting logic gates, using, respectively, the anticlockwise or the clockwise nonlinear switching transitions appearing in the VCSOA under external optical injection.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•May 18, 2007•0 citations

Modeling reflective bistability in vertical-cavity semiconductor optical amplifiers

Antonio Hurtado, Ana Pilar Gonzalez-Marcos, José A. Martín-Pereda

The characteristics of optical bistability in a vertical-cavity semiconductor optical amplifier (VCSOA) operated in reflection are reported. The dependences of the optical bistability in VCSOAs on the initial phase detuning and on the applied bias current are analyzed. The optical bistability is also studied for different numbers of superimposed periods in the top distributed bragg reflector (DBR) that conform the internal cavity of the device. The appearance of the X-bistable and the clockwise bistable loops is predicted theoretically in a VCSOA operated in reflection for the first time, to the best of our knowledge. Moreover, it is also predicted that the control of the VCSOA's top reflectivity by the addition of new superimposed periods in its top DBR reduces by one order of magnitude the input power needed for the assessment of the X- and the clockwise bistable loop, compared to that required in in-plane semiconductor optical amplifiers. These results, added to the ease of fabricating two-dimensional arrays of this kind of device could be useful for the development of new optical logic or optical signal regeneration devices.

IEEE Journal of Quantum Electronics•Feb 28, 2005•42 citations

Optical bistability in vertical-cavity semiconductor optical amplifiers

Pengyue Wen, Michael Sánchez, Matthias Groß +1 more

We present an overview of the properties and applications of optical bistability in vertical-cavity semiconductor optical amplifiers (VCSOAs). The basic physics and analytical models of this optical nonlinearity are discussed. Experimental results obtained from a VCSOA operated in the 850 nm wavelength region are presented. Counterclockwise hysteresis loops are obtained over a range of initial phase detuning and bias currents. One hysteresis loop is observed experimentally with an input power as low as 2 muW when the device is biased at 98% of its lasing threshold. Numerical simulations based on the Fabry-Perot resonator model and rate equations we developed show good agreement with our experimental observations. In addition, a low input intensity high contrast (10:1) optical and gate and 2R regeneration are demonstrated. We believe that bistable VCSOAs can significantly advance the prospect of a dense two-dimensional array of low-switching-intensity all-optical logic and memory elements.

Applied Optics•Aug 15, 2006•11 citations
We report experimental measurements of Optical Bistability (OB) and nonlinear switching in a 1550 nm-Vertical-Cavity Semiconductor Optical Amplifier (VCSOA) operated in reflection and biased below and above its threshold current. Two different types of OB and nonlinear switching, anticlockwise and clockwise, have been observed in both the optical power and wavelength domain. The influence of important parameters including the bias current, the initial wavelength detuning and the optical input power has also been studied. The existence of diverse forms of OB and nonlinear switching in a VCSOA operated in reflection opens the door for the development of inverting and non-inverting logic gates, using, respectively, the anticlockwise or the clockwise nonlinear switching transitions appearing in the VCSOA under external optical injection.
The characteristics of optical bistability in a vertical-cavity semiconductor optical amplifier (VCSOA) operated in reflection are reported. The dependences of the optical bistability in VCSOAs on the initial phase detuning and on the applied bias current are analyzed. The optical bistability is also studied for different numbers of superimposed periods in the top distributed bragg reflector (DBR) that conform the internal cavity of the device. The appearance of the X-bistable and the clockwise bistable loops is predicted theoretically in a VCSOA operated in reflection for the first time, to the best of our knowledge. Moreover, it is also predicted that the control of the VCSOA's top reflectivity by the addition of new superimposed periods in its top DBR reduces by one order of magnitude the input power needed for the assessment of the X- and the clockwise bistable loop, compared to that required in in-plane semiconductor optical amplifiers. These results, added to the ease of fabricating two-dimensional arrays of this kind of device could be useful for the development of new optical logic or optical signal regeneration devices.
We present an overview of the properties and applications of optical bistability in vertical-cavity semiconductor optical amplifiers (VCSOAs). The basic physics and analytical models of this optical nonlinearity are discussed. Experimental results obtained from a VCSOA operated in the 850 nm wavelength region are presented. Counterclockwise hysteresis loops are obtained over a range of initial phase detuning and bias currents. One hysteresis loop is observed experimentally with an input power as low as 2 muW when the device is biased at 98% of its lasing threshold. Numerical simulations based on the Fabry-Perot resonator model and rate equations we developed show good agreement with our experimental observations. In addition, a low input intensity high contrast (10:1) optical and gate and 2R regeneration are demonstrated. We believe that bistable VCSOAs can significantly advance the prospect of a dense two-dimensional array of low-switching-intensity all-optical logic and memory elements.