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Physics

A Quantum Defect Sees its Charged Surroundings

Ania C. Bleszynski Jayich

Published Dec 12, 2018• 0 citations
Publisher

Abstract

Nitrogen-vacancy centers in diamond are found to be more affected by local charge than expected, which has implications for the use of the defects as quantum sensors.
DOI
10.1103/physics.11.126

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Viewpoint: A Quantum Defect Sees its Charged Surroundings

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Nitrogen-vacancy centers in diamond are found to be more affected by local charge than expected, which has implications for the use of the defects as quantum sensors.

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In recent years, defect centers in wide band gap semiconductors such as diamond, have received significant attention. Defects offer great utility as single photon emitters, nanoscale sensors, and quantum memories and registers for quantum computation. Critical to the utility of these defects, is their charge state. In this dissertation, experiments surrounding the charge state dynamics and the carrier dynamics are performed and analyzed. Extensive studies of the ionization and recombination processes of defects in diamond, specifically, the Nitrogen Vacancy (NV) center, have been performed. Diffusion of ionized charge carriers has been imaged indirectly through the recapture of said carriers by optically active defects such as the NV center and the Silicon Vacancy (SiV) center. With proper understanding of the carrier dynamics, diamond stands to be a strong competitor in the field of spintronics for quantum information processing. Additionally, the understanding of these charge state dynamics is utilized in a novel proof of principle experiment, showing that the NV center defect’s charge state could serve as an ultra-dense 3D memory platform. The NV center has also been used as a nanoscale magnetometer. The high degree of spin polarization and the ease of manipulation of the NV allows us to transfer this polarization to other spins in the diamond and assists in the detection of spins outside of the diamond. Ensembles of Nitrogen Vacancy centers can be used to perform NMR spectroscopy of sample volumes not achievable through traditional methods. The operating mechanisms of the magnetic resonance aspects of the NV center will be discussed in depth. Work surrounding the control and polarization of the NV center’s host nitrogen spin will be covered. The topic of sensitivity and methods to improve that sensitivity will be covered as well.

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Nitrogen-Vacancy (NV) centers in diamond have been established as exceptionally versatile probes for quantum technologies from sensing to simulation.Owing to the versatility of diamond fabrication, NVs can be integrated into probes with nanoscale resolution and superb sensitivity.\nHowever, because the diamond is host to many other types of defects, the local environment of the NV is unique for each NV, which poses challenges for any devices instrumenting NVs.\nThis thesis contributes to the future of NV technologies along two essential directions.\nFirst, we work towards a more complete understanding of the local charge and strain environments of the NV.\nIn addition to permitting the calibration of these effects for NV probes, we suggest potential uses for the local charges and strain that had previously been considered hindrances.\nSecond, we develop new technologies for NV sensing and simulation.\nOur work integrating NVs into diamond anvil cells opens the door to detecting high pressure phenomena using the NVs as all-in-one sensors.\nFinally, our study of the coherence regimes of the local defect environment of the NV is a step towards versatile quantum simulation in dimensions lower than three.

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Photo-induced charge state switching of the nitrogen-vacancy center in diamond

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Imaging the Local Charge Environment of Nitrogen-Vacancy Centers in Diamond

Thomas Mittiga, Satcher Hsieh, Chong Zu +8 more

Characterizing the local internal environment surrounding solid-state spin defects is crucial to harnessing them as nanoscale sensors of external fields. This is especially germane to the case of defect ensembles which can exhibit a complex interplay between interactions, internal fields, and lattice strain. Working with the nitrogen-vacancy (NV) center in diamond, we demonstrate that local electric fields dominate the magnetic resonance behavior of NV ensembles at a low magnetic field. We introduce a simple microscopic model that quantitatively captures the observed spectra for samples with NV concentrations spanning more than two orders of magnitude. Motivated by this understanding, we propose and implement a novel method for the nanoscale localization of individual charges within the diamond lattice; our approach relies upon the fact that the charge induces a NV dark state which depends on the electric field orientation.

arXiv:1809.01668•Physical Review Letters•Dec 12, 2018•170 citations
In recent years, defect centers in wide band gap semiconductors such as diamond, have received significant attention. Defects offer great utility as single photon emitters, nanoscale sensors, and quantum memories and registers for quantum computation. Critical to the utility of these defects, is their charge state. In this dissertation, experiments surrounding the charge state dynamics and the carrier dynamics are performed and analyzed. Extensive studies of the ionization and recombination processes of defects in diamond, specifically, the Nitrogen Vacancy (NV) center, have been performed. Diffusion of ionized charge carriers has been imaged indirectly through the recapture of said carriers by optically active defects such as the NV center and the Silicon Vacancy (SiV) center. With proper understanding of the carrier dynamics, diamond stands to be a strong competitor in the field of spintronics for quantum information processing. Additionally, the understanding of these charge state dynamics is utilized in a novel proof of principle experiment, showing that the NV center defect’s charge state could serve as an ultra-dense 3D memory platform. The NV center has also been used as a nanoscale magnetometer. The high degree of spin polarization and the ease of manipulation of the NV allows us to transfer this polarization to other spins in the diamond and assists in the detection of spins outside of the diamond. Ensembles of Nitrogen Vacancy centers can be used to perform NMR spectroscopy of sample volumes not achievable through traditional methods. The operating mechanisms of the magnetic resonance aspects of the NV center will be discussed in depth. Work surrounding the control and polarization of the NV center’s host nitrogen spin will be covered. The topic of sensitivity and methods to improve that sensitivity will be covered as well.
Nitrogen-Vacancy (NV) centers in diamond have been established as exceptionally versatile probes for quantum technologies from sensing to simulation.Owing to the versatility of diamond fabrication, NVs can be integrated into probes with nanoscale resolution and superb sensitivity.\nHowever, because the diamond is host to many other types of defects, the local environment of the NV is unique for each NV, which poses challenges for any devices instrumenting NVs.\nThis thesis contributes to the future of NV technologies along two essential directions.\nFirst, we work towards a more complete understanding of the local charge and strain environments of the NV.\nIn addition to permitting the calibration of these effects for NV probes, we suggest potential uses for the local charges and strain that had previously been considered hindrances.\nSecond, we develop new technologies for NV sensing and simulation.\nOur work integrating NVs into diamond anvil cells opens the door to detecting high pressure phenomena using the NVs as all-in-one sensors.\nFinally, our study of the coherence regimes of the local defect environment of the NV is a step towards versatile quantum simulation in dimensions lower than three.
Characterizing the local internal environment surrounding solid-state spin defects is crucial to harnessing them as nanoscale sensors of external fields. This is especially germane to the case of defect ensembles which can exhibit a complex interplay between interactions, internal fields, and lattice strain. Working with the nitrogen-vacancy (NV) center in diamond, we demonstrate that local electric fields dominate the magnetic resonance behavior of NV ensembles at a low magnetic field. We introduce a simple microscopic model that quantitatively captures the observed spectra for samples with NV concentrations spanning more than two orders of magnitude. Motivated by this understanding, we propose and implement a novel method for the nanoscale localization of individual charges within the diamond lattice; our approach relies upon the fact that the charge induces a NV dark state which depends on the electric field orientation.