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Carbon

Tunable charge states of nitrogen-vacancy centers in diamond for ultrafast quantum devices

Anagh Bhaumik, Ritesh Sachan, J. Narayan

Published Oct 27, 2018• 38 citations
Publisher
DOI
10.1016/j.carbon.2018.10.084

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The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 °C. The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamond surface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.
Charge-states modulation of nitrogen-vacancy (NV) centers incorporated into single crystal diamond films attracts increasing attention for solid-state qubits applications. Here, we discuss the electro- and photoluminescence emission properties of NV centers incorporated by gas phase nitrogen delta-doping of the intrinsic diamond layer of a positive-intrinsic-negative (PIN) junction diode. The experiments show that the charge state of NV centers can be intentionally controlled by applying well-defined external bias voltages. It can be switched from the negatively charged state NV− to the neutral charged state NV0 when a strong forward bias potential is applied. This can be switched back by application of reverse potentials. These results will be discussed assuming basic electronic properties of diamond PIN diodes, including the variation of spectral properties as well as the dynamics of charge state transitions.
Ultrafast conversion dynamics between the NV 0 and NV – charge states in diamond is crucial for spin-state manipulation and readout. However, the underlying mechanism of the conversion, including the effective excitation wavelength, the time scales of the conversion, and the influencing factors, is still unclear. Here, we proposed a method to probe the ultrafast conversion of the two charge states via two-photon excitation with femtosecond laser pulses separated by 12.5 ns. We found that the highest conversion efficiency occurs at the excitation wavelength of around 532 nm, and the efficiency increases with temperature as well. The conversion time from NV 0 to NV – is obtained to be around 75 ps at 300 K. These findings advance the understanding of NV center charge-state dynamics and provide insights for high-speed spin readout in quantum information applications.