Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEEE International Conference on Group IV Photonics (GFP)

On the Transfer of Quantum-Optic Pair Sources Realized on SOI Photonics to Electronic Wafers

Bernhard Schrenk, Fabian Laudenbach, Paul Müllner, Stefan Jessenig, Jochen Kraft, Moritz Eggeling, Daivid Fowler, Rainer Hainberger, Hannes Hübel

Published Aug 1, 2018• 0 citations
Publisher

Abstract

A micro-ring assisted photon-pair engine for CWDM and DWDM emission in the 1550-nm region is implemented on silicon-on-insulator technology. Coincidences in pair emission show a 95% visibility for the photonic die. Just a small degradation is observed after wafer-level transfer to a BiCMOS electronics wafer.
DOI
10.1109/group4.2018.8478740

Related papers

Compact Quantum-Optic Photon-Pair Engine 3D-Integrated on BiCMOS Electronics

Fabian Laudenbach, Bernhard Schrenk, Paul Müellner +6 more

A silicon photon-pair engine based on spontaneous four-wave mixing in a compact micro-ring is implemented on SOI and transferred to BiCMOS through wafer-level 3D-integration. A coincidence rate of 160/sec per 200-GHz DWDM slice is obtained at 20% SPAD efficiency.

European Conference on Optical Communication•Sep 1, 2018•0 citations

Multi-wavelength photon pair source assisted by a silicon-on-insulator micro-ring resonator

Bernhard Schrenk, Fabian Laudenbach, Paul Müellner +4 more

An integrated photon pair source in the 1550-nm wavelength region is demonstrated. Spontaneous four-wave mixing is facilitated through a silicon-on-insulator micro-ring filter with 125-GHz spaced resonances. Coincidences in the pair emission are observed with a 95% visibility at spectral channels equidistant to the pump wavelength.

IEEE/LEOS Summer Topical Meetings•Jul 1, 2017•1 citation

Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices

Lorenzo Lazzari, Jérémie Schuhmann, Othmane Meskine +7 more

Hybrid photonic circuits, harnessing the complementary strengths of multiple materials, represent a key resource to enable compact, scalable platforms for quantum technologies. In particular, the availability of bright sources of tunable biphoton states is eagerly awaited to meet the variety of applications currently under development. In this work we demonstrate a heterogeneously integrated device that merges biphoton generation and on-chip quantum state engineering, combining an AlGaAs photon-pair source with a CMOS-compatible silicon-on-insulator (SOI) circuit. Photon pairs are generated in the C telecom band via spontaneous parametric down-conversion and transferred to the SOI chip through a multimode evanescent coupling scheme. This design achieves a pair generation rate above 10$^{6}$ s$^{-1}$mW$^{-1}$ and a coincidence-to-accidental ratio up to 600. Crucially, the coupling design induces strong and predictable transformations of the biphoton joint spectral amplitude, enabling complex quantum state engineering entirely on-chip in a compact device compliant with electrical pumping.

quant-pharXiv:2511.07128•Nov 11, 2025•1 citation

First Demonstration of a Group-IV Emitter on Photonic BiCMOS Supplying a Quantum Communication Link

Florian Honz, Michael Hentschel, Stefan Jessenig +3 more

We implement a silicon-on-insulator light emitter as optical supply for a QKD transmitter and transfer it to an electronic BiCMOS wafer. A secure key is established over short reach in co-existence with shortwave data transmission.

arXiv:2405.01237•Optical Fiber Communication Conference•Jan 1, 2024•2 citations

Efficient photon pair sources based on silicon-on-insulator microresonators

Jun Chen, Zachary H. Levine, Jingyun Fan +1 more

We present a general quantum-mechanical formalism to describe photon-pair generation via four-wave mixing in a Silicon-on-Insulator (SOI) microresonator. We also provide design principles for efficient photon-pair generation in an SOI microresonator through numerical simulations. Ring-cavity designs are shown to have a much wider dispersion-compensate frequency range than straight-cavity designs. Such on-chip quantum devices are highly promising for future integrated quantum information processing.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Jul 29, 2010•0 citations

Biphoton state generation and engineering with bright hybrid III–V/silicon photonic devices

Lorenzo Lazzari, Jérémie Schuhmann, Othmane Meskine +7 more

Hybrid photonic circuits, harnessing the complementary strengths of multiple materials, represent a key resource to enable compact, scalable platforms for quantum technologies. In particular, the availability of bright sources of tunable biphoton states is eagerly awaited to meet the variety of applications currently under development. In this work we demonstrate a heterogeneously integrated device working at room temperature that merges biphoton generation and on-chip quantum state engineering, combining an AlGaAs photon-pair source with a CMOS-compatible silicon-on-insulator (SOI) circuit. Photon pairs are generated in the C telecom band via spontaneous parametric down-conversion and transferred to the SOI chip through a multimodal evanescent coupling scheme. This design achieves a pair generation rate above 10 6 s −1 mW −1 and a coincidence-to-accidental ratio up to 600. Crucially, the coupling design induces strong and predictable transformations of the biphoton joint spectral amplitude, enabling complex quantum state engineering entirely on-chip in a compact device compliant with electrical pumping.

Optica Quantum•Jan 29, 2026•1 citation
Hybrid photonic circuits, harnessing the complementary strengths of multiple materials, represent a key resource to enable compact, scalable platforms for quantum technologies. In particular, the availability of bright sources of tunable biphoton states is eagerly awaited to meet the variety of applications currently under development. In this work we demonstrate a heterogeneously integrated device that merges biphoton generation and on-chip quantum state engineering, combining an AlGaAs photon-pair source with a CMOS-compatible silicon-on-insulator (SOI) circuit. Photon pairs are generated in the C telecom band via spontaneous parametric down-conversion and transferred to the SOI chip through a multimode evanescent coupling scheme. This design achieves a pair generation rate above 106^{6}6 s−1^{-1}−1mW−1^{-1}−1 and a coincidence-to-accidental ratio up to 600. Crucially, the coupling design induces strong and predictable transformations of the biphoton joint spectral amplitude, enabling complex quantum state engineering entirely on-chip in a compact device compliant with electrical pumping.
We present a general quantum-mechanical formalism to describe photon-pair generation via four-wave mixing in a Silicon-on-Insulator (SOI) microresonator. We also provide design principles for efficient photon-pair generation in an SOI microresonator through numerical simulations. Ring-cavity designs are shown to have a much wider dispersion-compensate frequency range than straight-cavity designs. Such on-chip quantum devices are highly promising for future integrated quantum information processing.
Hybrid photonic circuits, harnessing the complementary strengths of multiple materials, represent a key resource to enable compact, scalable platforms for quantum technologies. In particular, the availability of bright sources of tunable biphoton states is eagerly awaited to meet the variety of applications currently under development. In this work we demonstrate a heterogeneously integrated device working at room temperature that merges biphoton generation and on-chip quantum state engineering, combining an AlGaAs photon-pair source with a CMOS-compatible silicon-on-insulator (SOI) circuit. Photon pairs are generated in the C telecom band via spontaneous parametric down-conversion and transferred to the SOI chip through a multimodal evanescent coupling scheme. This design achieves a pair generation rate above 10 6 s −1 mW −1 and a coincidence-to-accidental ratio up to 600. Crucially, the coupling design induces strong and predictable transformations of the biphoton joint spectral amplitude, enabling complex quantum state engineering entirely on-chip in a compact device compliant with electrical pumping.