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Optical Effect of Electric Field on Indirect Exciton Luminescence in Double Quantum Wells of GaAs

V. V. Krivolapchuk, Moskalenko, E. S., Alexander L. Zhmodikov, T. S. Cheng, C. T. B. Foxon

Published Jun 1, 1998• 0 citations
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Abstract

The present report studies the IX line shape in photoluminescence (PL) spectra originating from the DQW of GaAs depending on the electric field value applied to the structure. We observe unusual IX line shape behaviour in the definite range of bath temperatures and pumping intensities and discuss our results in terms of possible revealing of the collective excitations in a dense IX gas which were previoulsly predicted.

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The present report studies the IX line shape in photoluminescence (PL) spectra originating from the DQW of GaAs depending on the electric field value applied to the structure. We observe unusual IX line shape behaviour in the definite range of bath temperatures and pumping intensities and discuss our results in terms of possible revealing of the collective excitations in a dense IX gas which were previoulsly predicted.
Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell exciton in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circularly polarized light, the luminescence line of interwell excitons exhibits a significant narrowing and a drastic increase in the degree of circular polarization of photoluminescence with increasing exciton concentration. It is found that the radiative recombination rate significantly increases under these conditions. This phenomenon is observed at temperatures lower than the critical point and can be interpreted in terms of the collective behavior of interwell excitons.
The time evolution and kinetics of photoluminescence (PL) spectra of interwell excitons in double GaAs/AlGaAs quantum wells ( n-i-n structures) have been investigated under the pulse resonance excitation of intrawell 1sHH excitons using a pulsed tunable laser. It is found that the collective exciton phase arises with a time delay relative to the exciting pulse (several nanoseconds), which is due to density and temperature relaxation to the equilibrium values. The origination of the collective phase of interwell excitons is accompanied by a strong narrowing of the corresponding photoluminescence line (the line width is about 1.1 meV), a superlinear rise in its intensity, a long time in the change of the degree of circular polarization, a displacement of the PL spectrum toward lower energies (about 1.5 meV) in accordance with the filling of the lowest state with the exciton Bose condensate, and a significant increase in the radiative decay rate of the condensed phase. The collective exciton phase arises at temperatures T <6 K and interwell exciton densities n =3×10 10 cm −2 . Coherent properties of the collective phase of interwell excitons and experimental manifestations of this coherence are discussed.
Optical nonlinearities of Al(x)Ga(1-x)As/GaAs asymmetric coupled quantum wells within a p-i-n structure have been observed by using time-resolved spectroscopy. Under photoexcitation, exciton absorption lines exhibit spectral shifts of as much as approximately 1 meV. The recovery times of these spectral shifts are of the order of hundreds of picoseconds when the excitation photon is above the lowest exciton state but become less than 10 psec when excitation is below the lowest exciton state, indicating a virtual process. The behavior of these spectral shifts is consistent with the presence of a polarization induced by optical pumping. The polarization is believed to be due to the excitons that have nonvanishing electric dipole moments along the axis of the asymmetric coupled quantum wells.
In this study, the effects of the electric field and structure-tune parameter on the linear, third order nonlinear and total absorption coefficients for transitions between the first three bound states of an electron confined within the tuned GaAs/ GaAlAs double quantum well are investigated. The obtained results show that the absorption spectra is susceptible to the structure parameter and the electric field. By changing the structure parameter and intensity of the electric field, it can be adjusted a blue or red shift in the absorption spectra according to purpose and these results can be used to tune and control the optical properties of tuned double quantum well.
We present here the first observation of quasisteady state optical nonlinearities in the absorption and photoluminescence (PL) spectra of GaAs/AlAs type II heterostructures. Using pump-probe spectroscopy we observed deep modulation, ΔT ~ 0.5 (Δα =−50,000 cm−1), due to a >40-meV blue shift and bleaching of the heavy hole exciton absorption peak. In addition, a blue shift of up to ~10 meV of the indirect PL line is observed with increasing PL excitation intensity. These nonlinearities are understood in terms of spatially separated layers of electrons and holes that are produced by the optical excitation process.