Abstract Temperature sensing at the nanoscale is a significant experimental challenge. Here, an approach using dressed states is reported to make a leading quantum sensor – the nitrogen‐vacancy (NV) center in diamond – selectively sensitive to temperature, even in the presence of normally confounding magnetic fields. Using an experimentally straightforward approach, the magnetic sensitivity of the NV center is suppressed by a factor of seven, while retaining full temperature sensitivity and narrowing the NV center linewidth. These results demonstrate the power of engineering the sensor Hamiltonian using external control fields to enable sensing with improved specificity to target signals.
High spatial resolution quantum sensing of near-surface nitrogen vacancy (NV) centers in diamond has enabled detection of magnetic, electrical, and thermal signals at the nanoscale. At depths of just a few nanometers, NV centers serve as localized quantum probes for external spins or low-dimensional materials, but their proximity to the surface also enhances decoherence caused by fluctuating nuclear spins. While advances in surface engineering have stabilized the charge state of NV centers at depths of tens of nanometers, achieving both ultra-shallow implantation (0.5-2 nm) and long-term spin coherence remains a central challenge. In this work, we show using first-principles modeling that, by exploiting the interaction of surface-induced strain and weak dc magnetic fields, the spin coherence times of 1-nm-deep NV centers can be greatly improved near the spin-phonon-confined regime at room temperature in 12C-rich diamonds. We also demonstrate that this protocol benefits ~ 10-nm-deep NV centers in natural diamond, enabling vector magnetometry at the nanoscale. Shallow NV centers in diamond are advantageous for quantum sensing but suffer from surface magnetic noise. Using first-principles simulations supported by experiments, the authors show that a combination of small magnetic fields and surface strain can significantly enhance spin coherence of 1 nm-deep NV centers.
Quantum sensors encompass a diverse class of devices that exploit quantum coherence to detect weak or nanoscale signals. As their behavior is tied to physical constants, quantum sensors can achieve accuracy, repeatability, and precision approaching fundamental limits [1, 2]. As a result, these sensors have shown utility in a wide range of applications in both science and engineering leading to innovations. Among many solid-state spin systems, nitrogen-vacancy (NV) centers in diamonds have attracted considerable attention as a leading platform in many fields of quantum technologies, from quantum sensing to information processing and communication applications. They have superior physical properties, and their quantum coherence is preserved even at room temperature. The energy levels of NV centers are sensitive to magnetic fields, electric fields, strain, and temperature, and the spatial resolution is scalable from nanometers to millimeters. Therefore, diamond quantum sensors are distinctive sensors with multimodality and span scalable application fields. To realize an ideal quantum sensor for applications, the technical challenges in the sensor materials and the quantum control techniques, such as coherent microwave spin manipulation, effective optical spin-state initialization, and readout, have been developed. This chapter briefly explains the sensing principle using NV centers and then introduces sensor systems for biomedical applications, and monitoring of batteries for electric vehicles and internal power devices.
Deploying nitrogen vacancy (NV) centers in diamond as nanoscale quantum sensors for condensed matter and materials physics requires placing the NV centers close to the sensing target. One solution is to fabricate diamond nanostructures and integrate them with materials and devices. However, diamond etching and ion milling can introduce subsurface damage and surface defects that degrade the charge stability and spin coherence of NV centers near the surface. Here we report a procedure for fabricating low-damage nanostructured diamond membranes, and we show that this fabrication scheme preserves the optical and spin properties of state-of-the-art shallow NV center quantum sensors, within nanometers of the diamond surface, while providing significant photonic enhancement. Furthermore, we demonstrate a pick-and-place transfer method, which enables integration with diverse sensing targets.