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Optical Materials

Electronic excitation energy transfer processes in Er:YAG under variable pump duration

R. B. Kostanyan, P. H. Muzhikyan, Davit Zargaryan, Gagik G. Demirkhanyan

Published Jun 7, 2018• 1 citation
Publisher
DOI
10.1016/j.optmat.2018.05.077

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Yttrium Aluminum Garnet (YAG) crystals doped with Erbium have posed an interesting position in the field of rare earth solid state lasers as they possess the property of self-saturation, in which the upper energy level in a laser has a much shorter lifetime than that of the lower level.The non-linear energy transfer dynamics of Er:YAG are modeled under high resonant pump conditions. Specifically the multi-photon effect known as excited state absorption (ESA) is modeled by measuring the cross section in a single crystal Er:YAG sample utilizing a pump and probe technique. The measured ESA cross section is then included in the rate equation modeling that has typically been ignored such an effect when modeling the non-linear ion to ion interactions. By pumping with selective resonant pumps, the interaction dynamics of the upper and the lower laser levels in the Erbium ion reveal the contributions of the non-linear energy transfer mechanisms towards the populations of the levels respectively. This thesis work shows the added accuracy of the rate equation modeling by its inclusion of the measured ESA cross-section and its effect on the population evolution in the Er:YAG system. The model will be tested with measurements made with select Er:YAG crystals being pumped by combinations of resonant infra-red lasers with a chopper spinning at a rate on the order of magnitude of the lower lasing level lifetime.

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Yttrium Aluminum Garnet (YAG, Y_3 〖Al〗_5 O_12) crystals doped with Erbium have posed an interesting position in the field of rare earth solid state lasers as they possess the property of self-saturation, in which the upper energy level in a laser has a much shorter lifetime than that of the lower level. This is the case of the 2.94μm transition in Er:YAG. That property at first seems to make this material unfit for use as a laser gain medium, however further research into these classes of rare earth materials revealed interesting non-liner energy transfer mechanisms that allow it to be a useful mid wave infra-red (MWIR) coherent source in the continuous wave (CW) and pulsed regimes. This came to fruition due to decades of modeling and spectroscopic research investigating the non-linear energy transfer mechanisms of excited state absorption (ESA), energy transfer up-conversion (ETU), and cross relaxation (XR). These effects show up in the rise and fall times of the levels observed through fluorescence. Resulting in the non-exponential rise and fall characteristics and having a squared or even cubed relation to the population. The population evolution for each of the lasing levels is now affected by ions recycling energy and in turn cause the lifetimes of the levels to “effectively” change to a point where simple linear models do not adequately describe the system and its performance. The non-linear energy transfer dynamics of Er:YAG are modeled under high resonant pump conditions. By pumping with selective resonant pumps, the interaction dynamics of the (_ ^4)I_(11/2) and the (_ ^4)I_(13/2) levels in the Erbium ion reveal the contributions from generally ignored non-linear energy transfer mechanisms. Specifically, the multi-photon effect known as excited state absorption (ESA) is modeled by measuring and characterizing the cross section in single crystal Er:YAG samples utilizing a pump and probe technique coupled with transient fluorescence measurements. The measured ESA cross section is then included in the rate equation modeling.

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Energy transfer in erbium doped optical waveguides based on silicon

Pieter G. Kik

Energy transfer in erbium doped optical waveguides based on silicon This thesis describes the energy transfer processes\noccurring in materials that can be used for the fabrication of silicon compatible optical integrated circuits, operating at 1.54 mm.The thesis consists of three parts: Part I discusses energy transfer in optical waveguide amplifiers on silicon. The waveguide amplifiers use an intra-4f transition of the rare earth ion erbium occurring at 1.54 mm. To achieve significant amplification, high\n Er concentrations (> 10 20 cm -3 ) are required. At these concentrations Er ions can interact, resulting in co-operative\n upconversion, in which one excited Er ion is excited into a higher energy state, while a neighboring Er ion returns to the ground\n state. In Part I this and other gain limiting effects are investigated. In particular, it is shown that the atomic-scale Er distribution\n is of crucial importance for the performance of Er doped waveguide amplifiers. Part II discusses the energy transfer processes\n occurring in Er doped silicon. It is shown that Er in silicon can be excited by electron-hole pair recombination in an\n impurity-Auger effect. This effect may be used to fabricate an electrically pumped Er doped waveguide amplifier. The reverse\n process can also occur: an excited Er ion can de-excite and generate an electron-hole pair in the silicon, due to a non-radiative\n backtransfer process. This process has an efficiency of 70% at room temperature. This observation enables the fabrication of an\n Er doped photo-detector in a Si waveguide operating at 1.54 mm. The performance of such a detector is discussed. Part III\n discusses the interaction between Er and silicon nanocrystals embedded in SiO2. Si nanocrystals efficiently absorb visible light,\n resulting in the generation of quantum confined electron-hole pairs. The electron-hole pairs efficiently transfer energy to Er.\n Due to the energy transfer, the effective Er absorption cross section is five orders of magnitude larger than for direct optical\n excitation. Silicon nanocrystals may thus be used to increase the pumping efficiency of an Er doped waveguide amplifier. It is\n shown that a single nanocrystal can excite ~1 Er ion at a time and that an optical gain of 0.6 dB/cm may be achieved in a typical\n nanocrystal sensitized waveguide amplifier. Due to the broad absorption band of Si nanocrystals, a broad band light source can\n be used as pump source in such a nanocrystal sensitized Er doped waveguide amplifier.

•Sep 18, 2000•11 citations
Yttrium Aluminum Garnet (YAG) crystals doped with Erbium have posed an interesting position in the field of rare earth solid state lasers as they possess the property of self-saturation, in which the upper energy level in a laser has a much shorter lifetime than that of the lower level.The non-linear energy transfer dynamics of Er:YAG are modeled under high resonant pump conditions. Specifically the multi-photon effect known as excited state absorption (ESA) is modeled by measuring the cross section in a single crystal Er:YAG sample utilizing a pump and probe technique. The measured ESA cross section is then included in the rate equation modeling that has typically been ignored such an effect when modeling the non-linear ion to ion interactions. By pumping with selective resonant pumps, the interaction dynamics of the upper and the lower laser levels in the Erbium ion reveal the contributions of the non-linear energy transfer mechanisms towards the populations of the levels respectively. This thesis work shows the added accuracy of the rate equation modeling by its inclusion of the measured ESA cross-section and its effect on the population evolution in the Er:YAG system. The model will be tested with measurements made with select Er:YAG crystals being pumped by combinations of resonant infra-red lasers with a chopper spinning at a rate on the order of magnitude of the lower lasing level lifetime.
Yttrium Aluminum Garnet (YAG, Y_3 〖Al〗_5 O_12) crystals doped with Erbium have posed an interesting position in the field of rare earth solid state lasers as they possess the property of self-saturation, in which the upper energy level in a laser has a much shorter lifetime than that of the lower level. This is the case of the 2.94μm transition in Er:YAG. That property at first seems to make this material unfit for use as a laser gain medium, however further research into these classes of rare earth materials revealed interesting non-liner energy transfer mechanisms that allow it to be a useful mid wave infra-red (MWIR) coherent source in the continuous wave (CW) and pulsed regimes. This came to fruition due to decades of modeling and spectroscopic research investigating the non-linear energy transfer mechanisms of excited state absorption (ESA), energy transfer up-conversion (ETU), and cross relaxation (XR). These effects show up in the rise and fall times of the levels observed through fluorescence. Resulting in the non-exponential rise and fall characteristics and having a squared or even cubed relation to the population. The population evolution for each of the lasing levels is now affected by ions recycling energy and in turn cause the lifetimes of the levels to “effectively” change to a point where simple linear models do not adequately describe the system and its performance. The non-linear energy transfer dynamics of Er:YAG are modeled under high resonant pump conditions. By pumping with selective resonant pumps, the interaction dynamics of the (_ ^4)I_(11/2) and the (_ ^4)I_(13/2) levels in the Erbium ion reveal the contributions from generally ignored non-linear energy transfer mechanisms. Specifically, the multi-photon effect known as excited state absorption (ESA) is modeled by measuring and characterizing the cross section in single crystal Er:YAG samples utilizing a pump and probe technique coupled with transient fluorescence measurements. The measured ESA cross section is then included in the rate equation modeling.
Energy transfer in erbium doped optical waveguides based on silicon This thesis describes the energy transfer processes\noccurring in materials that can be used for the fabrication of silicon compatible optical integrated circuits, operating at 1.54 mm.The thesis consists of three parts: Part I discusses energy transfer in optical waveguide amplifiers on silicon. The waveguide amplifiers use an intra-4f transition of the rare earth ion erbium occurring at 1.54 mm. To achieve significant amplification, high\n Er concentrations (> 10 20 cm -3 ) are required. At these concentrations Er ions can interact, resulting in co-operative\n upconversion, in which one excited Er ion is excited into a higher energy state, while a neighboring Er ion returns to the ground\n state. In Part I this and other gain limiting effects are investigated. In particular, it is shown that the atomic-scale Er distribution\n is of crucial importance for the performance of Er doped waveguide amplifiers. Part II discusses the energy transfer processes\n occurring in Er doped silicon. It is shown that Er in silicon can be excited by electron-hole pair recombination in an\n impurity-Auger effect. This effect may be used to fabricate an electrically pumped Er doped waveguide amplifier. The reverse\n process can also occur: an excited Er ion can de-excite and generate an electron-hole pair in the silicon, due to a non-radiative\n backtransfer process. This process has an efficiency of 70% at room temperature. This observation enables the fabrication of an\n Er doped photo-detector in a Si waveguide operating at 1.54 mm. The performance of such a detector is discussed. Part III\n discusses the interaction between Er and silicon nanocrystals embedded in SiO2. Si nanocrystals efficiently absorb visible light,\n resulting in the generation of quantum confined electron-hole pairs. The electron-hole pairs efficiently transfer energy to Er.\n Due to the energy transfer, the effective Er absorption cross section is five orders of magnitude larger than for direct optical\n excitation. Silicon nanocrystals may thus be used to increase the pumping efficiency of an Er doped waveguide amplifier. It is\n shown that a single nanocrystal can excite ~1 Er ion at a time and that an optical gain of 0.6 dB/cm may be achieved in a typical\n nanocrystal sensitized waveguide amplifier. Due to the broad absorption band of Si nanocrystals, a broad band light source can\n be used as pump source in such a nanocrystal sensitized Er doped waveguide amplifier.