Resonance fluorescence spectrum from excitons in quantum wells

Moongoo Choi, Koo-Chul Je, Seung-Han Park

R. Zimmermann

G. K. G. Burau, Günter Manzke, Frank Kieseling +3 more

We examine the resonance fluorescence from localized excitons in GaAs/AlGaAs quantum wells with increasing excitation power and for different temperatures. Extending our experimental setup by a microscope objective with high numerical aperture in the cryostat, the detection of the emission from localized excitons is possible. We find a nonlinear behaviour of the emitted intensity with increasing laser power, which is explained as a transition of the emission from excitonic to electron-hole plasma states due to many-body effects between excited carriers. This is supported by our theoretical description based on the semiconductor Bloch equations.

T. Amand, D. Robart, X. Marie +4 more

Rima Al-Khuzheyri

Yu-xi Liu, Chang-qi Cao, Hui W. Cao

The effect of the exciton-exciton interaction on the resonance fluorescence of quantum-well excitons is studied. At relative low exciton density, the resonance fluorescence exists only when the exciton-exciton interaction is not negligible. The fluorescence spectrum changes from one peak to two peaks when the pump light intensity is increased beyond a critical value. The fluorescence light is antibunching when the mean exciton number in the quantum well is more than 0.5. The difference between exciton resonance fluorescence and two-level atom resonance fluorescence is presented.