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Bulletin of the American Physical Society

Photo-doped carrier dynamics in Mott insulatoring systems

Eiki Iyoda, Sumio Ishihara

Published Mar 18, 2013• 0 citations
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We use a nonequilibrium implementation of extended dynamical mean-field theory in combination with a noncrossing approximation impurity solver to study the effect of dynamical screening in photoexcited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a reduction of the Mott gap. The coupling to low-energy bosonic modes furthermore opens new relaxation channels and significantly speeds up the thermalization process. We also investigate the effect of the energy distribution of the photo doped carriers on the screening.
We theoretically study the properties of the photo-carriers created in a one-dimensional Mott insulator subject to strong AC electric fields. The time-dependent density matrix renormalization group method is used to calculate the nonlinear optical conductivity, for which a metallic, gapless mode is found to emerge. The mode has linear dispersion with a charge velocity that differs from the free electron velocity, which indicates that the photo-doped carriers behave collectively as in the Tomonaga-Luttinger liquid.