Nitrogen-vacancy centers in diamond are sensitive probes of time-varying magnetic fields that can be used to identify unknown spin defects in their nearby environment. Performing spectral quantum measurements on such single quantum probes enables gaining information about the internal structure and dynamics of nearby spin defects that would otherwise be inaccessible through direct or indirect measurements with classical probes. Here, we identify a system composed of two electron-nuclear spin defects in a diamond crystal by performing a series of spectral identification measurements using a single nitrogen-vacancy center in diamond. Besides enabling the identification of new spin defects and studies of their formation mechanisms, these techniques will be useful for scaling up quantum systems by converting environmental spin defects into quantum resources.Nitrogen-vacancy centers in diamond are sensitive probes of time-varying magnetic fields that can be used to identify unknown spin defects in their nearby environment. Performing spectral quantum measurements on such single quantum probes enables gaining information about the internal structure and dynamics of nearby spin defects that would otherwise be inaccessible through direct or indirect measurements with classical probes. Here, we identify a system composed of two electron-nuclear spin defects in a diamond crystal by performing a series of spectral identification measurements using a single nitrogen-vacancy center in diamond. Besides enabling the identification of new spin defects and studies of their formation mechanisms, these techniques will be useful for scaling up quantum systems by converting environmental spin defects into quantum resources.

Jul 2, 20181 citation

Quantum control and engineering of single spins in diamond

D.M. Toyli

Jan 1, 20130 citations

A defect in diamond with millisecond-scale spin relaxation time at room temperature

Sounak Mukherjee, Anran Li, Johannes Eberle +16 more

Spin defects in diamond are promising platforms for quantum sensing. The longest electron spin relaxation times ( $T_1$ ) at room temperature for solid-state defects are observed in nitrogen vacancy centers in diamond, which can reach 6.67 ms, and substitutional nitrogen ("P1 centers") in diamond, which exhibit a $T_1$ of 2 ms. No other solid-state defect has exhibited millisecond-scale spin relaxation times at room temperature thus far. Here, we characterize the spin properties of the WAR5 defect in diamond with pulsed electron spin resonance. The observed $T_1$ is one of the longest for solid-state spin defects: 0.97(27) ms at room temperature and 14.38(19) min at 4 K. The observed coherence time ( $T_2$ ) is 246(7) $μ$ s, which can be extended to 6.49(34) ms at 4 K with dynamical decoupling. Furthermore, we demonstrate optical spin polarization with a range of wavelengths from 405 nm to 500 nm and propose potential zero-phonon line candidates.Spin defects in diamond are promising platforms for quantum sensing. The longest electron spin relaxation times ($T_1$) at room temperature for solid-state defects are observed in nitrogen vacancy centers in diamond, which can reach 6.67 ms, and substitutional nitrogen ("P1 centers") in diamond, which exhibit a $T_1$ of 2 ms. No other solid-state defect has exhibited millisecond-scale spin relaxation times at room temperature thus far. Here, we characterize the spin properties of the WAR5 defect in diamond with pulsed electron spin resonance. The observed $T_1$ is one of the longest for solid-state spin defects: 0.97(27) ms at room temperature and 14.38(19) min at 4 K. The observed coherence time ($T_2$) is 246(7) $μ$s, which can be extended to 6.49(34) ms at 4 K with dynamical decoupling. Furthermore, we demonstrate optical spin polarization with a range of wavelengths from 405 nm to 500 nm and propose potential zero-phonon line candidates.

cond-mat.mtrl-sciCross-listedarXiv:2603.07265Mar 10, 2026

Tailoring spin defects in diamond by lattice charging

Felipe Fávaro de Oliveira, Denis Antonov, Ya Wang +6 more

Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometre positioning accuracy, which is typically achieved by low-energy ion implantation. A drawback of this technique is the significant residual lattice damage, which degrades the performance of spins in quantum applications. Here we show that the charge state of implantation-induced defects drastically influences the formation of lattice defects during thermal annealing. Charging of vacancies at, for example, nitrogen implantation sites suppresses the formation of vacancy complexes, resulting in tenfold-improved spin coherence times and twofold-improved formation yield of nitrogen-vacancy centres in diamond. This is achieved by confining implantation defects into the space-charge layer of free carriers generated by a boron-doped diamond structure. By combining these results with numerical calculations, we arrive at a quantitative understanding of the formation and dynamics of the implanted spin defects. These results could improve engineering of quantum devices using solid-state systems.Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometre positioning accuracy, which is typically achieved by low-energy ion implantation. A drawback of this technique is the significant residual lattice damage, which degrades the performance of spins in quantum applications. Here we show that the charge state of implantation-induced defects drastically influences the formation of lattice defects during thermal annealing. Charging of vacancies at, for example, nitrogen implantation sites suppresses the formation of vacancy complexes, resulting in tenfold-improved spin coherence times and twofold-improved formation yield of nitrogen-vacancy centres in diamond. This is achieved by confining implantation defects into the space-charge layer of free carriers generated by a boron-doped diamond structure. By combining these results with numerical calculations, we arrive at a quantitative understanding of the formation and dynamics of the implanted spin defects. These results could improve engineering of quantum devices using solid-state systems.

arXiv:1701.07055Nature CommunicationsMay 17, 2017132 citations

Coherent excitation dynamics of single spins in diamond

Abram L. Falk, G.D. Fuchs, D. D. Awschalom +1 more

Bulletin of the American Physical SocietyFeb 27, 20120 citations

Spin defects in diamond are promising platforms for quantum sensing. The longest electron spin relaxation times (

T_1

) at room temperature for solid-state defects are observed in nitrogen vacancy centers in diamond, which can reach 6.67 ms, and substitutional nitrogen ("P1 centers") in diamond, which exhibit a

T_1

of 2 ms. No other solid-state defect has exhibited millisecond-scale spin relaxation times at room temperature thus far. Here, we characterize the spin properties of the WAR5 defect in diamond with pulsed electron spin resonance. The observed

T_1

is one of the longest for solid-state spin defects: 0.97(27) ms at room temperature and 14.38(19) min at 4 K. The observed coherence time (

T_2

) is 246(7)

μ

s, which can be extended to 6.49(34) ms at 4 K with dynamical decoupling. Furthermore, we demonstrate optical spin polarization with a range of wavelengths from 405 nm to 500 nm and propose potential zero-phonon line candidates.