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Physical review. B./Physical review. B

Short lifetime components in the relaxation of boron acceptors in silicon

K. Saeedi, N. Stavrias, Britta Redlich, Helge P. Riemann, Nikolay V. Abrosimov, Peter Becker, H.‐J. Pohl, Mike L. W. Thewalt, Benedict N Murdin

Published Mar 26, 2018• 2 citations
Publisher

Abstract

We present time-resolved measurements of the relaxation between the orbital states of the shallow acceptor boron in silicon. The silicon host was enriched $^{28}\mathrm{Si}$, which exhibits lifetime broadened absorption lines. We observed a wide range of ${T}_{1}$ lifetimes from 6 ps to 130 ps depending on the excited state and the pump intensity. The fastest transients have not been observed previously in the time domain, and they are caused by the phonon relaxation responsible for the small-signal frequency domain linewidth. We identify the slower components with an ionization/recombination/cascade pathway.

DOI
10.1103/physrevb.97.125205

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