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The Japan Society of Applied Physics

Long spin coherence time of pure negatively charged NV center in n-type diamond

Yuichi Maruyama, Takuya Danjo, Hiromitsu Kato, Toshiharu Makino, Satoshi Yamasaki, Hiroki Morishita, Masaki Fujiwara, Norikazu Mizuochi

Published Feb 8, 2018• 0 citations
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We fabricated n-type–intrinsic–n-type (n–i–n) diamond junctions to stabilize negatively charged nitrogen vacancy (NV − ) centers. An ensemble of NV centers was generated in a high-purity intrinsic diamond in order to maintain the spin coherence time. The Fermi-energy of the i-layers was controlled by band bending at the two n–i junctions. We confirmed that the NV centers can be modulated toward NV − centers by decreasing the width of the i-layers between adjacent n-layers. The spin coherence time for the NV − centers was maintained even for narrow i-layers.
The ability to control the charge and spin states of nitrogen-vacancy (NV) centers near the diamond surface is of pivotal importance for quantum applications. Hydrogen-terminated diamond is promising for long spin coherence times and ease of controlling the charge states due to the low density of surface defects. However, it has so far been challenging to create negatively charged single NV centers with controllable spin states beneath a hydrogen-terminated surface because atmospheric adsorbates that act as acceptors induce surface holes. In this study, we optically detected the magnetic resonance of shallow single NV centers in hydrogen-terminated diamond through precise control of the nitrogen implantation fluence. Furthermore, we found that the probability of detecting the resonance was enhanced by reducing the surface acceptor density through passivation of the hydrogen-terminated surface with hexagonal boron nitride without air exposure. This control method opens up new opportunities for using NV centers in quantum applications.
Negatively charged nitrogen-vacancy (NV-) center in diamond has been paid attention as a highly sensitive detector for magnetic field. The magnetic sensitivity is proportional to the reciprocal of √(NT_2 ), where N is the number of NV centers and T2 is the spin coherence time. To improve the sensitivity, high concentration of NV- centers and extended coherence time are necessary. It is generally known that electron beam irradiation into type-Ib diamond which include high initial concentration of isolated substitutional nitrogen (P1 center) is a useful method to create high concentration of NV- centers. The electron beam irradiation generates vacancies in diamond and the subsequently annealing enables vacancies to diffuse in the lattice. Then diffused vacancies are captured by nitrogen atoms, as a result, NV centers are created. The post annealing has been performed at 1000°C or higher temperature for the purpose of improving the spin properties of NV- centers. In current study, we focused on post-annealing at high temperature to improve magnetic sensitivity of quantum sensing. We investigated annealing temperature and time dependence of the creation behavior of NV centers in type-Ib diamonds to understand appropriate annealing process for enhancing sensitivity of NV- center.