Photonics & Electromagnetics Research Symposium - Fall (PIERS-Fall)
Level anti-crossing in 13C-enriched diamond
Alexei I. Ivanov, Anastasia A. Talatay, Alexander T. Khalikov
Abstract
We investigate the properties of spin states in the electronic ground state of a single nitrogen-vacancy center (NV_) in13C-enriched diamond. The analysis is based on application of a method that uses a complete set of commuting operators. Our results demonstrate that there are a two double degeneracy of energy levels in this system which is not removed by magnetic field and it may be consider like a special case of LAC. The change in properties of the spin states of the NV-center at the level anti-crossing is being considered as a possible reason for change in the intensity of NV-centers photoluminescence.