Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Journal of Physics Conference Series

Bleaching compensation in GaAs/AlGaAs quantum wells by above-barrier illumination

I. A. Solovev, Yury V. Kapitonov, V. Davydov, Yu. P. Efimov, Sergei A. Eliseev, V. V. Petrov, V. V. Ovsyankin

Published Nov 1, 2017• 2 citations
Publisher

Abstract

We report an experimental study of the nonlinear response of single GaAs/AlGaAs quantum well. It was shown that bleaching effect manifested as reversible exciton spectral lines broadening can be suppressed by additional above-barrier illumination.
DOI
10.1088/1742-6596/929/1/012090

Related papers

Contributions to optical absorption in GaAs/AlGaAs multiple quantum wells

Alan R. Kost, M. Kawase, E. Garmire

An examination of the contribution of excitons, compared to the continuum states, to the optical properties of GaAs/AlGaAs multiple quantum wells illuminates the mechanisms underlying nonlinear absorption and nonlinear refraction and yields information which is useful for optimizing devices which incorporate these materials. We have measured the absorption as a function of intensity at three different wavelengths—above the band edge, on the excitonic resonance, and far below the band edge—to separate the effects. We find that different well thicknesses have different saturation intensities both for excitonic and continuum absorption.

Annual Meeting Optical Society of America•Jan 1, 1987•1 citation

Intensity dependent absorption bleaching of high subband excitons in GaAs/AlGaAs multiple quantum wells

Sang‐Hun Shin, Kyumin Chae, Seung-Han Park +3 more

Journal of the Korean Physical Society•Jan 1, 1998•0 citations

Nonlinear absorption and gain in InGaAs/GaAs quantum wells

Giuliano Coli, A. Passaseo, Donato Greco +4 more

We present a detailed study of the excitonic nonlinearities in InGaAs/GaAs multiple quantum wells based on both stationary and transient pump-and-probe transmission spectroscopy. Bleaching of the excitonic resonance and free carrier gain have been observed. A quantitative analysis of the observed nonlinearity is provided by means of a rigorous solution of the Bethe–Salpeter equation for the investigated heterostructures.

Applied Physics Letters•Aug 18, 1997•1 citation

Spectra modulation of light resonance Rayleigh scattering in GaAs/AlGaAs structured with quantum wells under over-barrier illumination

Nikolai N. Sibeldin, М. Л. Скориков, В. А. Цветков

Pis'ma v Zhurnal Ehksperimental'noj i Teoreticheskoj Fiziki•Jan 1, 2002•0 citations

Coherent excitonic nonlinearity versus inhomogeneous broadening in single quantum wells

W. Langbein, Paola Borri, J. M. Hvam +1 more

Summary form only given.The coherent response of excitons in semiconductor nanostructures, as measured in four wave mixing (FWM) experiments, depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs-AlGaAs single quantum wells (SQW) of 4 nm to 25 nm well width. Two main mechanisms are found to be important. First, the excitation-induced dephasing FWM signal (EID), which leads to a strong dependence of the signal on the angle between the linear input polarizations. The presence of the EID in the mainly homogeneously broadened sample (25 nm) is shown by the beating between EID and two-photon coherence (TPC) at the exciton for negative delay and co-linear polarized excitation. It vanishes for cross-polarized excitation, thus excluding the importance of local-field effects.

Conference on Lasers and Electro-Optics•Nov 27, 2002•0 citations

Investigation of the mechanisms of exciton coherence relaxation in single GaAs/AlGaAs quantum wells by the methods of excitonic induction

S. V. Poltavtsev, V. V. Ovsyankin, Boris V. Stroganov +4 more

The mechanisms of exciton coherence relaxation in GaAs quantum wells in the linear mode have been experimentally investigated. An experimental technique has been developed for measuring the total phase relaxation rate, rates of reversible and temperature-irreversible excitonic phase relaxation, and the radiative decay rate Γ R of excitonic polarization. The experimental values of Γ R for a quantum well of specified thickness, obtained for a series of samples, have a spread not larger than 15%. This accuracy made it possible to estimate the shape of the dependence of Γ R on the well thickness L Z . It is experimentally found that Γ R is temperature-independent up to 80 K.

Optics and Spectroscopy•Oct 1, 2008•4 citations
An examination of the contribution of excitons, compared to the continuum states, to the optical properties of GaAs/AlGaAs multiple quantum wells illuminates the mechanisms underlying nonlinear absorption and nonlinear refraction and yields information which is useful for optimizing devices which incorporate these materials. We have measured the absorption as a function of intensity at three different wavelengths—above the band edge, on the excitonic resonance, and far below the band edge—to separate the effects. We find that different well thicknesses have different saturation intensities both for excitonic and continuum absorption.
Summary form only given.The coherent response of excitons in semiconductor nanostructures, as measured in four wave mixing (FWM) experiments, depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs-AlGaAs single quantum wells (SQW) of 4 nm to 25 nm well width. Two main mechanisms are found to be important. First, the excitation-induced dephasing FWM signal (EID), which leads to a strong dependence of the signal on the angle between the linear input polarizations. The presence of the EID in the mainly homogeneously broadened sample (25 nm) is shown by the beating between EID and two-photon coherence (TPC) at the exciton for negative delay and co-linear polarized excitation. It vanishes for cross-polarized excitation, thus excluding the importance of local-field effects.
The mechanisms of exciton coherence relaxation in GaAs quantum wells in the linear mode have been experimentally investigated. An experimental technique has been developed for measuring the total phase relaxation rate, rates of reversible and temperature-irreversible excitonic phase relaxation, and the radiative decay rate Γ R of excitonic polarization. The experimental values of Γ R for a quantum well of specified thickness, obtained for a series of samples, have a spread not larger than 15%. This accuracy made it possible to estimate the shape of the dependence of Γ R on the well thickness L Z . It is experimentally found that Γ R is temperature-independent up to 80 K.