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Properties of the light emitted by a silicon on-chip optical parametric oscillator (OPO).

Carlos Andrés Gonzalez Arciniegas

Published Nov 23, 2017• 3 citations
Publisher

Abstract

The Optical Parametric Oscillator (OPO) has been one of the most versatile source of non-classical states of light.Usual configurations of such devices are a macroscopic second order nonlinear crystals inside an optical cavity.Recently the use of silicon photonics techniques allowed the implementation of high quality factor microcavities and OPOs which include several technological advantages over usual configuration as a small size, bigger bandwidth, CMOS compatibility, facility to engineer the dispersion properties and compatibility with commercial optical fiber communications.Nevertheless Contents vii 4.3.2.2 Three Modes Correlations . . . . . . . . . . . . . . . . . .4.3.2.

DOI
10.11606/t.43.2017.tde-22112017-153330

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The Optical Parametric Oscillator (OPO) has been one of the most versatile source of non-classical states of light.Usual configurations of such devices are a macroscopic second order nonlinear crystals inside an optical cavity.Recently the use of silicon photonics techniques allowed the implementation of high quality factor microcavities and OPOs which include several technological advantages over usual configuration as a small size, bigger bandwidth, CMOS compatibility, facility to engineer the dispersion properties and compatibility with commercial optical fiber communications.Nevertheless Contents vii 4.3.2.2 Three Modes Correlations . . . . . . . . . . . . . . . . . .4.3.2.
The Optical Parametric Oscillator (OPO) has been one of the most versatile source of non-classical states of light. Usual configurations of such devices are a macroscopic second order nonlinear crystals inside an optical cavity. Recently the use of silicon photonics techniques allowed the implementation of high quality factor microcavities and OPOs which include several technological advantages over usual configuration as a small size, bigger bandwidth, CMOS compatibility, facility to engineer the dispersion properties and compatibility with commercial optical fiber communications. Nevertheless the nonlinearity present within these systems is a third order nonlinearity for which theoretical calculations lack in the literature. Here we describe theoretically the quantum properties of the light generated in an OPO with a third order nonlinearity. We showed that the effects of phase modulation (which are not present in the second order nonlinearity) and dispersion are determinant in the way that oscillation and entanglement is produced in the system. Despite of these effects, bipartite and tripartite entanglement is predicted with the use of the Schmidt modes formalism. We also describe the system when there are more modes exited within the cavity and a frequency comb is formed. In such a situation, using again the Schmidt modes formalism, multipartite entanglement was predicted as well.
This thesis is mainly devoted to the study of the quantum properties of optical parametric oscillators (OPOs), which are nowadays the sources of the highest-quality quantum-correlated light, apart from fundamental tools in the classical-optics realm, allowing for the conversion of laser light into virtually all regions of the optical spectrum. Regarding its content, the thesis might seem a bit unusual, because two thirds of it are devoted to a self-contained (though dense) introduction to quantum optics, including the quantum physics of harmonic oscillators, the quantization of the electromagnetic field in an open optical cavity and the detection of its output light, as well as the derivation of the basic model and known properties of OPOs. Hence, all the original results of the thesis are contained in the last third, were it is proven that all OPOs can be understood as multi-mode devices whose quantum properties can be explained in terms of three basic phenomena: bifurcation squeezing, spontaneous symmetry breaking, and pump clamping, which are introduced through simple, yet realistic examples.
Chip-scale integrated photonic circuits provide an attractive platform for the implementation of many quantum photonic technologies ranging from precise metrology to secure communication and quantum computation. In particular, silicon photonic platforms support micron-scale nonlinear optical sources of non-classical light which can be mass manufactured using the robust fabrication processes pioneered by the CMOS microelectronics industry. Integration of these quantum photonic sources with high-performance classical photonic devices on the same chip is required for truly scalable quantum information technologies. Integrated nonlinear resonators are investigated as sources of quantum mechanically correlated photon pair sources. An all-order dispersion engineering method is presented as a robust design synthesis for micoring sources. In addition, a novel concept of coupled mode dispersion compensation is proposed and demonstrated, providing significantly improved performance characteristics of resonant four-wave mixing sources. Next a photon pair source is demonstrated in a commercial CMOS microelectronics process opening the door to future integration of quantum photonics with electronic logic and control circuits. Classical nonlinear optical measurements of stimulated four-wave mixing are used for the first time to accurately predict the quantum correlations from the same device operating in the photon pair regime. Next the first demonstration of fully on-chip pump rejection is demonstrated with over 95 dB pump extinction improving the figures of merit from previous demonstrations by multiple orders of magnitude, including losses, detected pair rates and size. Finally, proposals for introducing novel degrees of freedom provided by an integrated platform are presented for further improving the performance of both photon pair and classical nonlinear optical sources.
Engineering non-classical states of the electromagnetic field is a central quest for quantum optics(1,2). Beyond their fundamental significance, such states are indeed the resources for implementing various protocols, ranging from enhanced metrology to quantum communication and computing. A variety of devices can be used to generate non-classical states, such as single emitters, light-matter interfaces or non-linear systems(3). We focus here on the use of a continuous-wave optical parametric oscillator(3,4). This system is based on a non-linear χ(2) crystal inserted inside an optical cavity and it is now well-known as a very efficient source of non-classical light, such as single-mode or two-mode squeezed vacuum depending on the crystal phase matching. Squeezed vacuum is a Gaussian state as its quadrature distributions follow a Gaussian statistics. However, it has been shown that number of protocols require non-Gaussian states(5). Generating directly such states is a difficult task and would require strong χ(3) non-linearities. Another procedure, probabilistic but heralded, consists in using a measurement-induced non-linearity via a conditional preparation technique operated on Gaussian states. Here, we detail this generation protocol for two non-Gaussian states, the single-photon state and a superposition of coherent states, using two differently phase-matched parametric oscillators as primary resources. This technique enables achievement of a high fidelity with the targeted state and generation of the state in a well-controlled spatiotemporal mode.
Quantum states with non-Gaussian statistics generated by optical parametric oscillators (OPO) with fluctuating parameters are studied by means of the kurtosis excess of the external field quadratures. The field generated is viewed as the response of a nonlinear device to the fluctuations of pump laser amplitude and frequency, crystal temperature, and cavity detuning, in addition to quantum noise sources. The kurtosis excess has been evaluated perturbatively up to the third order in the strength of the crystal nonlinear coupling factor and the second order in the classical fluctuating parameters. Applied to the device described in Opt. Expr. 13, 948 (2005), the model has given values of the kurtosis excess in good agreement with the measured ones.