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Integrated Visible Photonics for Trapped-Ion Quantum Computing

Dave Kharas, Cheryl M. Sorace-Agaskar, Suraj Bramhavar, William Loh, Jeremy Sage, P Juodawlkis, John Chiaverini

Published Jun 10, 2017• 1 citation
OpenAlex

Abstract

Abstract : Abstract- A scalable trapped-ion-based quantum-computingarchitecture requires the capability tooptically address individual ions at severalwavelengths. We demonstrate a dual-layeredsilicon nitride photonic platform for integrationinto planar ion traps designed for trapped-ioncontrol in a 400 to 1100 nm wavelength range.

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Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si3N4) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb+-applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.
Trapped ions provide a high-fidelity platform for quantum information processing, yet delivery of multiple, distinct wavelengths across large networks of interaction zones remains a bottleneck. Conventional free-space light delivery lacks scalability, while on-chip grating couplers suffer from narrow operational bandwidth that increases circuit footprint and optical interfacing complexity. Here we show a broadband photonic integrated circuit capable of addressing individual ions. The circuit combines a planar waveguide lens with a micromirror fabricated using two-photon polymerization at wafer scale. This implementation can address three individual ions from λλλ = 405 - 880 nm with -27 dB average intensity crosstalk at 5 μm5\,μ\mathrm{m}5μm pitch. We trap 40Ca+^{40}\mathrm{Ca}^{+}40Ca+ and 138Ba+^{138}\mathrm{Ba}^{+}138Ba+ ions above such devices, characterize optical crosstalk with barium ions, and demonstrate individual repumping of calcium ions. This monolithic photonic architecture brings broadband addressing in an on-chip modality to trapped-ion technology. More generally, integrating additive manufacturing into quantum devices is poised to unlock expanded design space for implementing novel quantum architectures.
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si 3 N 4 ) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb + -applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.
Photonic integrated circuits (PICs) offer compact and scalable solutions for trapped-ion quantum technologies. This work demonstrates photonic platforms that promise the potential integration of photonic components for light delivery and control across ultraviolet (UV) to near-infrared (NIR) wavelengths. Passive waveguides and beam-shaping structures provide precise and stable optical addressing of ions, while active elements such as modulators and switches enable dynamic, on-chip control for quantum operations. Materials like aluminum oxide (Al2O3) and aluminum nitride (AlN) are evaluated to illustrate how functionality can be tailored to spectral needs. These integrated photonic systems reduce reliance on bulky free-space optics, improve alignment stability, and support future development of compact quantum sensors, atomic clocks, and scalable quantum processors.