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Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

Localized orbital electronic states of colour centres in diamond for strong and fast light-matter interactions

Christian Weinzetl, Jonas N. Becker, Johannes Görlitz, Eilon Poem, James Klatzow, Patrick M. Ledingham, D. J. Saunders, Ian A. Walmsley, Christoph Becher, J. Nunn

Published Jun 1, 2017• 0 citations
Publisher

Abstract

For memory applications and optical control of qubits ultrafast manipulation and high coupling efficiencies are desirable. Ultrafast coherent control can be achieved by the off-resonant Raman scheme [1]. There exist several colour centres with an optically accessible lambda-type energy structure which offer a level splitting large enough for broadband laser pulses.

DOI
10.1109/cleoe-eqec.2017.8087627

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For memory applications and optical control of qubits ultrafast manipulation and high coupling efficiencies are desirable. Ultrafast coherent control can be achieved by the off-resonant Raman scheme [1]. There exist several colour centres with an optically accessible lambda-type energy structure which offer a level splitting large enough for broadband laser pulses.
Full coherent control of quantum systems is a key prerequisite to build a quantum information processing (QIP) system. Spatially selective and ultrafast control of individual qubits in multi-qubit systems, on the other hand, optimally is based on all-optical control techniques using short laser pulses. However, these techniques require optically accessible quantum systems with suitable electronic level configurations to allow for the application of ultrafast and thus broadband pulses. Moreover, to enable good scalability, quantum systems in the solid state are generally preferred. So far, the only quantum systems in the solid state that match all these requirements are semiconductor quantum dots. However, to achieve a suitable level structure in these systems charged dots in strong magnetic fields have to be used.
Abstract Complete control of the state of a quantum bit (qubit) is a fundamental requirement for any quantum information processing (QIP) system. In this context, all-optical control techniques offer the advantage of a well-localized and potentially ultrafast manipulation of individual qubits in multi-qubit systems. Recently, the negatively charged silicon vacancy centre (SiV − ) in diamond has emerged as a novel promising system for QIP due to its superior spectral properties and advantageous electronic structure, offering an optically accessible Λ -type level system with large orbital splittings. Here, we report on all-optical resonant as well as Raman-based coherent control of a single SiV − using ultrafast pulses as short as 1 ps, significantly faster than the centre’s phonon-limited ground state coherence time of about 40 ns. These measurements prove the accessibility of a complete set of single-qubit operations relying solely on optical fields and pave the way for high-speed QIP applications using SiV − centres.
Quantum memories are a key technology enabling arbitrarily-scalable optical quantum information processing architectures via active synchronisation and multiplexing of quantum information. Optically active confined impurities, called colour centres, in a spin-free and highly transparent diamond host material are promising systems to realise such devices in the solid-state, suitable for integration in a scalable guided-wave on-chip photonic platform. In this thesis, the transition from optical Raman quantum memories in atomic vapours to solid-state systems is prepared, exploring two diamond-based systems: On the basis of ensembles of neutrally charged nitrogen vacancy centres, desirable properties and criteria of solid-state systems used for optical quantum memories are developed. These include non-vanishing off-resonant Raman coupling, variable acceptance bandwidth for broadband pulses and cross-linear polarised optical transitions to prevent the generation of noise during the Raman memory protocol, which have been realised experimentally by applying external uniaxial stress to the system. However, attempts to measure the very short orbital ground state lifetime affirmed unfavourable theoretical estimations, rendering this centre unsuitable for memory applications. As a potential alternative, the negatively charged silicon vacancy centre has been investigated, which offers a large ground state splitting with extended life and coherence times and narrow inhomogeneous spectral lines due to its inversion symmetry. In an ensemble of silicon vacancy centres, the ground state lifetime is measured and coherent manipulation via resonant Ramsey interference and Hahn echo is demonstrated. In a second step, off-resonant two-photon transitions are achieved implementing stimulated Raman adiabatic passage between the orbital ground states. Finally, strong light-matter interaction of a weak signal field with the ensemble via phase-sensitive four-wave mixing is shown forming the basis for integrated Raman-based memories and single photon nonlinearities in ensembles of silicon vacancy centres and closely related defects.