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Japanese Journal of Applied Physics

Multiple Photon Assisted Tunneling between Two Coupled Quantum Dots ( Quantum Dot Structures)

T. Fujisawa, Seigo Tarucha

Published Jun 30, 1997• 0 citations
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The gate-defined quantum dot is regarded as one of the basic structures required for scalable semiconductor quantum processors. Here, we demonstrate a structure that contains three quantum dots scaled in series. The electron number of each dot and the tunnel coupling between them can be tuned conveniently using splitting gates. We tune the quantum dot array asymmetrically such that the tunnel coupling between the right dot and the central dot is much larger than that between the left dot and the central dot. When driven by microwaves, the sidebands of the photon-assisted tunneling process appear not only in the left-to-central dot transition region but also in the left-to-right dot transition region. These sidebands are both attributed to the left-to-central transition for asymmetric coupling. Our result shows that there is a region of a triple quantum dot structure that remains indistinct when studied with a normal two-dimensional charge stability diagram; this will be helpful in future studies of the scalability of quantum dot systems.
We present a continuous microwave photon counter based on superconducting cavity-coupled semiconductor quantum dots. The device utilizes photon-assisted tunneling in a double quantum dot with tunneling events being probed by a third dot. Our device detects both single and multiple-photon absorption events independently, thanks to the energy tunability of a two-level double-dot absorber. We show that the photon-assisted tunnel rates serve as the measure of the cavity photon state in line with the P(E) theory-a theoretical framework delineating the mediation of the cavity photon field via a two-level absorber. We further describe the single photon detection using the Jaynes-Cummings input-output theory and show that it agrees with the P(E) theory predictions at a low-power regime.