The exact ground state properties of the Peierls-Hubbard model with site-off-diagonal electron-phonon (e-ph) coupling are numerically calculated. It is shown that the lattice is always distorted however the e-ph coupling constant is small. Dynamical bond strength (DBS) including the effects of the correlated motion of electrons and ions is introduced to describe the itinerancy of the electron in this system. From the analysis of DBS, the Coulomb repulsion is shown to enhance itinerancy of the electrons in the strongly coupled e-ph system with higher phonon frequency. This can be interpreted in terms of the concept of coherent hopping which is the consequence of the cooperative motion of the strongly correlated electrons and rapidly oscillating lattice system.
Abstract Electronic correlations strongly influence the properties of matter. For example, they can induce a discontinuous transition from conducting to insulating behavior. In this paper basic terms of the physics of correlated electrons are explained. In particular, I describe some of the steps that led to the formulation of a comprehensive, non‐perturbative many‐body approach to correlated quantum many‐body systems, the dynamical mean‐field theory (DMFT). The DMFT becomes exact in the limit of high lattice dimensions (d → ∞) and allows one to go beyond the investigation of simple correlation models and thereby better understand, and even predict, the properties of electronically correlated materials.
Novel physics arises when strongly correlated system is driven out of equilibrium by external fields. Dramatic changes in physical properties, such as conductivity, are empirically observed in strongly correlated materials under high electric field. In particular, electric-field driven metal-insulator transitions are well-known as the resistive switching effect in a variety of materials, such as VO
2, V
2O
3 and other transition metal oxides. To satisfactorily explain both the phenomenology and its underlying mechanism, it is required to model microscopically the out-of-equilibrium dissipative lattice system of interacting electrons. In this thesis, we developed a systematic method of modeling non-equilibrium steady states for dissipative lattice systems by means of Non-equilibrium Green's function and Dynamical Mean Field Theory. We firstly establish a "minimum model" to formulate the strong-field transport in non-interacting dissipative electron lattice. This model is exactly soluble and convenient for discussing energy dissipation and steady-state properties. The formalism is then combined with Dynamical Mean Field Theory to provide a systematic framework describing the nonequilibrium steady-state of correlated materials. We use the formalism to study the strong-field transport properties of correlated materials, Mott insulators and Dirac electrons in graphene. We concentrate on the microscopic description of resistive switching. Of particular interest is the filament formation during the dynamical phase transition, which has been interpreted as a result of the delicate interplay between dissipation and Mott physics. We will also examine
IV characteristics and particularly the current saturation of Dirac electrons in graphene. The arXiv version has been updated with minor modifications and corrections.