We demonstrate the possibility for atom localization via surface plasmon polariton. A single and double localized peaks are observed in the absorption/dispersion spectrums of surface plasmon polariton.
Abstract We demonstrate the phenomenon of atom localization using surface plasmon polariton (SPP) absorption/dispertion spectrums. A single and double localized peaks are measured on the absorption/dispersion spectrums of SPP at different parameters and directions of propagation of the control fields. We show localized peaks with ∼80% probability on dispersion spectrum and 50% probability on the absorption spectrum. The localized peaks observed are shown to depend on strength of the control field and the electrical conductivity.
We develop a new scheme of two-dimensional (2D) and three-dimensional (3D) atom localization via absorption and gain spectra of surface plasmon polaritons (SPPs) in a closed loop four-level atomic system. For the atom–field interaction, we construct a spatially dependent field by superimposing two (three) standing-wave fields (SWFs) in 2D (3D) atom localization, respectively. We achieve high-precision and high spatial resolution of an atom localization by appropriately adjusting the system parameters such as probe field detuning and phase shifts of the SWFs. The absorption and gain spectra are used to attain information about the position of an atom in SPPs. Our proposed scheme opens up a fascinating way to improve the atom localization that supplies some practical applications in a high-dimensional SPPs.
The damping spectrum of surface plasmon polaritons (SPPs) is significantly enhanced for atom localization in regions beneath λ/20×λ/20. By changing the phases and directions of control fields, two and single localization peaks are observed in the SPP damping spectrum. Circular and elliptical localization peaks are predominantly controlled in the λ2 areal region of −π≤kx≤π and −π≤ky≤π. Additionally, craters and sharp peaks resembling localization can be modified and controlled within the two-dimensional space of λ2 with a resolution smaller than λ2/400. These modifications may be advantageous to the trapping of neutral atoms, nanolithography, and plasmonics technology.