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Quantum Photonic Devices

Integration of optically active neodymium ions in niobium devices (Nd:Nb): quantum memory for hybrid quantum entangled systems

Osama M. Nayfeh, Patrick C. Sims, Brad Liu, Saurabh Sharma, Carlos M. Torres, Lance Lerum, Mohammed Fahem, Sanja Zlatanovic, Vincent Dinh, Nenad Djapic, David Chao, Dave Rees, Britanny Lynn, Brian Higa, John Moore, Aaron Upchurch, John Cothern, Mark Tukeman, Ripan Barua, Bradley D. Davidson, Ayax D. Ramirez, Vikas Anant, Gregory S. Kanter

Published Aug 29, 2017• 0 citations
Publisher

Abstract

Optically active rare-earth Neodymium (Nd) ions are integrated in Niobium (Nb) thin films forming a new quantum memory device (Nd:Nb) targeting long-lived coherence times and multi-functionality enabled by both spin and photon storage properties. Nb is implanted with Nd spanning 10-60 keV energy and 1013-1014 cm-2 dose producing a 1- 3% Nd:Nb concentration as confirmed by energy-dispersive X-ray spectroscopy. Scanning confocal photoluminescence (PL) at 785 nm excitation are made and sharp emission peaks from the 4F3/2 -< 4I11/2 Nd3+ transition at 1064-1070 nm are examined. In contrast, un-implanted Nb is void of any peaks. Line-shapes at room temperature are fit with Lorentzian profiles with line-widths of 4-5 nm and 1.3 THz bandwidth and the impacts of hyperfine splitting via the metallic crystal potential are apparent and the co-contribution of implant induced defects. With increasing Nd from 1% to 3%, there is a 0.3 nm red shift and increased broadening to a 4.8 nm linewidth. Nd:Nb is photoconductive and responds strongly to applied fields. Furthermore, optically detected magnetic resonance (ODMR) measurements are presented spanning near-infrared telecom band. The modulation of the emission intensity with magnetic field and microwave power by integration of these magnetic Kramer type Nd ions is quantified along with spin echoes under pulsed microwave π-π/2 excitation. A hybrid system architecture is proposed using spin and photon quantum information storage with the nuclear and electron states of the Nd3+ and neighboring Nb atoms that can couple qubit states to hyperfine 7/2 spin states of Nd:Nb and onto NIR optical levels excitable with entangled single photons, thus enabling implementation of computing and networking/internet protocols in a single platform.

DOI
10.1117/12.2273012

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quant-pharXiv:2607.11992•Jul 14, 2026
Optically active rare-earth Neodymium (Nd) ions are integrated in Niobium (Nb) thin films forming a new quantum memory device (Nd:Nb) targeting long-lived coherence times and multi-functionality enabled by both spin and photon storage properties. Nb is implanted with Nd spanning 10-60 keV energy and 1013-1014 cm-2 dose producing a 1- 3% Nd:Nb concentration as confirmed by energy-dispersive X-ray spectroscopy. Scanning confocal photoluminescence (PL) at 785 nm excitation are made and sharp emission peaks from the 4F3/2 -< 4I11/2 Nd3+ transition at 1064-1070 nm are examined. In contrast, un-implanted Nb is void of any peaks. Line-shapes at room temperature are fit with Lorentzian profiles with line-widths of 4-5 nm and 1.3 THz bandwidth and the impacts of hyperfine splitting via the metallic crystal potential are apparent and the co-contribution of implant induced defects. With increasing Nd from 1% to 3%, there is a 0.3 nm red shift and increased broadening to a 4.8 nm linewidth. Nd:Nb is photoconductive and responds strongly to applied fields. Furthermore, optically detected magnetic resonance (ODMR) measurements are presented spanning near-infrared telecom band. The modulation of the emission intensity with magnetic field and microwave power by integration of these magnetic Kramer type Nd ions is quantified along with spin echoes under pulsed microwave π-π/2 excitation. A hybrid system architecture is proposed using spin and photon quantum information storage with the nuclear and electron states of the Nd3+ and neighboring Nb atoms that can couple qubit states to hyperfine 7/2 spin states of Nd:Nb and onto NIR optical levels excitable with entangled single photons, thus enabling implementation of computing and networking/internet protocols in a single platform.
Abstract : Rare-earth ions are useful for the implementation of quantum memory. In particular, the energy levels and magnetic/spin properties of select ions may enable storage of quantum states. Also, the optical activity may enable optical read-out techniques and optical transmission of qubit states. In addition, the energy levels of ions can be used for designing superconducting qubits where the ionic configuration tunes the Hamiltonian for quantum computing. In the more near term, ions embedded in superconductor heterostructure can be used to implement cryogenic memory for superconducting digital computing. Our concept involves embedding rare-earth ions in superconductor devices to provide a low dissipation environment and access to the systems Hamiltonian. In this report we show results and success in integrating rare-earth neodymium by ion implantation in thin films of niobium and niobium-based heterostructure devices. We model the ion implantation process and confirm the concentration of the neodymium in niobium by energy dispersive X-ray (EDX) spectroscopy in a scanning electron microscope (SEM). We study the effect of optical illumination and magnetic stimulus on the transport of the devices at room temperature, as it is important to understand the films and devices so they can properly designed and optimized for utility as quantum memory. We find that the magnetic field has a strong effect on the response. We also find that the selectivity in the optical effect when using a broadband halogen lamp in comparison to a light emitting diode (LED) with selectivity in the excitation wavelength, reinforces the role of the magnetic and optically active Nd rare-earth ions on the device response.
Quantum interconnects allow disparate quantum systems to be entangled, leading to more powerful integrated quantum technology and increases in scalability. The foundation for such technology, including photonic quantum memories and coherent microwave-to-optical (M2O) transducers, have already been developed in rare-earth ion (REI) crystals. Here we demonstrate improved REI quantum device functionality in an on-chip platform that dramatically strengthens the ions’ interactions with optical fields and integrates with planar microwave technology. Using a photonic crystal nanobeam fabricated in a Nd-doped yttrium vanadate (YVO) crystal, we harness the enhanced ion-photon interactions that create single photon Rabi frequencies as large as 60 MHz. In particular, the large AC Stark shift is used to control an ensemble of approximately 4000 ions for photonic quantum memory applications. We demonstrate AC Stark shift control of the storage time in the atomic frequency comb protocol as well as the possibility of memories based on an all-optical variation of the hybrid photon echo rephasing protocol. The spin state of the REIs can also be addressed directly through the integration of microwave striplines and coplanar waveguide cavities. The achievement of optically detected magnetic resonance in on-chip waveguides and nanophotonic cavities in Nd:YVO will be presented along with the initial progress of achieving coherent M2O conversion using Raman heterodyne spectroscopy. With photonic quantum memories and sources, single ion qubits, and quantum M2O all feasible in the one integrated platform, REI technology is a promising platform for enabling large scale integration of diverse quantum resources.
Quantum light-matter interfaces that reversibly map the quantum state of photons onto the quantum states of atoms, are essential components in the quantum engineering toolbox with applications in quantum communication, computing, and quantum-enabled sensing. In this talk I present our progress towards developing on-chip quantum light-matter interfaces based on nanophotonic resonators fabricated in rare-earth-doped crystals known to exhibit the longest optical and spin coherence times in the solid state. We recently demonstrated coherent control of neodymium (Nd3+) ions coupled to yttrium orthosilicate Y2SiO5 (YSO) photonic crystal nano-beam resonator. The coupling of the Nd3+ 883 nm 4I9/2-4F3/2 transition to the nano-resonator results in a 40 fold enhancement of the transition rate (Purcell effect), and increased optical absorption (~80%) - adequate for realizing efficient optical quantum memories via cavity impedance matching. Optical coherence times T2 up to 100 μs with low spectral diffusion were measured for ions embedded in photonic crystals, which are comparable to those observed in unprocessed bulk samples. This indicates that the remarkable coherence properties of REIs are preserved during nanofabrication process. Multi-temporal mode photon storage using stimulated photon echo and atomic frequency comb (AFC) protocols were implemented in these nano-resonators. Our current technology can be readily transferred to Erbium (Er) doped YSO devices, therefore opening the possibility of efficient on-chip optical quantum memory at 1.5 μm telecom wavelength. Integration with superconducting qubits can lead to devices for reversible quantum conversion of optical photons to microwave photons.
Quantum interconnects allow disparate quantum systems to be entangled, leading to more powerful integrated quantum technology and increases in scalability. The foundation for such technology, including photonic quantum memories and coherent microwave-to-optical (M2O) transducers, have already been developed in rare-earth ion (REI) crystals. Here we demonstrate improved REI quantum device functionality in an on-chip platform that dramatically strengthens the ions’ interactions with optical fields and integrates with planar microwave technology. Using a photonic crystal nanobeam fabricated in a Nd-doped yttrium vanadate (YVO) crystal, we harness the enhanced ion-photon interactions that create single photon Rabi frequencies as large as 60 MHz. In particular, the large AC Stark shift is used to control an ensemble of approximately 4000 ions for photonic quantum memory applications. We demonstrate AC Stark shift control of the storage time in the atomic frequency comb protocol as well as the possibility of memories based on an all-optical variation of the hybrid photon echo rephasing protocol. The spin state of the REIs can also be addressed directly through the integration of microwave striplines and coplanar waveguide cavities. The achievement of optically detected magnetic resonance in on-chip waveguides and nanophotonic cavities in Nd:YVO will be presented along with the initial progress of achieving coherent M2O conversion using Raman heterodyne spectroscopy. With photonic quantum memories and sources, single ion qubits, and quantum M2O all feasible in the one integrated platform, REI technology is a promising platform for enabling large scale integration of diverse quantum resources.
Rare-earth-ion doped crystals are state-of-the-art materials for optical quantum memories and quantum transducers between optical and microwave photons. Here we describe our progress towards a nanophotonic quantum memory based on a rare-earth (Neodymium) doped yttrium orthosilicate (YSO) photonic crystal resonator. The Purcell-enhanced coupling of the 883 nm transitions of Neodymium (Nd3+) ions to the nano-resonator results in increased optical depth, which could in principle facilitate highly efficient photon storage via cavity impedance matching. The atomic frequency comb (AFC) memory protocol can be implemented in the Nd:YSO nano-resonator by efficient optical pumping into the long-lived Zeeman state. Coherent optical signals can be stored and retrieved from the AFC memory. We currently measure a storage efficiency on par with a bulk crystal Nd:YSO memory that is millimeters long. Our results will enable multiplexed on-chip quantum storage and thus quantum repeater devices using rare-earth-ions.
Hardware neurons incorporating built-in memory components are critical technologies for implementing large scale neural networks that exhibit adaptive-itinerant behavior and produce biological-inspired spiking patterns that match neuroscience known operations (1). Moreover, neurons capable of full quantum information processing through their qubit states and quantum trajectory provides capability for hybrid quantum-classical operations through the level of coherence/entanglement and non-Markovianity (2,3). These attributes further contribute to solving complex quantum mechanical problems by providing a rich and diverse group for expressing quantum neural states. Upgrading these hardware neurons now with optical spin qubits excitable with pulsed laser excitation in the near infrared and designed from negatively charged silicon vacancies in semiconductor silicon carbide (4) and Neodymium rare earth ions in the superconducting Niobium/Niobium oxide film (5) that form the memory provides access to the unique spin Hamiltonian that considers electronic and nuclear interactions. In this manuscript, we experimentally measure opto-electronic quantum-classical neurons integrated with a optical spin qubit and examine how tailored neuronal spiking sequences drive the photoluminescence oscillations and modulate the quantum spin transitions. We derive a quantum model for the system that considers the interaction between the neuron and optical qubit spin and perform calculations to project how quantum computing operations are expandable across the state space in the quantum-classical neuron and spin qubit system. For example, the resulting impact on the neuron quantum states where the strength is adjustable due to dynamical memory changes. These results are critical for realizing hardware neurons with quantum optical capabilities and inspired by the existence in biology of biophotons.