Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Laser & Optoelectronics Progress

Controlling Optical Storage in Semiconductor Quantum Dot Electromagnetically Induced Transparency by Phonon-Assisted Transition

黎方名 Li Fangming, 王登龙 Wang Denglong, 佘彦超 She Yanchao, 丁建文 Ding Jianwen, 肖思国 Xiao Siguo

Published Jan 1, 2017• 1 citation
Publisher
DOI
10.3788/lop54.082701

Related papers

Controlling of dark or bright soliton type in a cascade-type electromagnetically induced transparency semiconductor quantum well by the coupling longitudinal optical phonons

Hong Tang, Denglong Wang, Weixi Zhang +2 more

In the past few years, with developing the technology of electromagnetically induced transparency (EIT) and improving the semiconductor technology, it has become possible to realize the application of optical soliton to communication device. Studies show the reduction of group velocity of the optical soliton in EIT medium under weak driving condition, which possibly realizes the storing of optical pulses in information storage. More importantly, semiconductor quantum wells have the inherent advantages such as large electric dipole moments of the transitions, high nonlinear optical coefficients, small size, easily operating and integrating. So it is considered to be the most potential EIT medium to realize the application of quantum devices. The optical soliton behavior in the semiconductor quantum well is studied, which can provide a certain reference value for the practical application of information transmission and processing together quantum devices. Although there has been a series of researches on both linear and nonlinear optical properties in semiconductor quantum wells structures, few publications report the effects of the cross-coupling longitude-optical phonon (CCLOP) relaxation on its linear and nonlinear optical properties. However, to our knowledge, the electron-longitude-optical phonon scattering rate can be realized experimentally by varying the sub-picosecond range to the order of a picosecond. According to this, we in the paper study the effects of the CCLOP relaxation on its linear and nonlinear optical properties in a cascade-type three-level EIT semiconductor quantum well. According to the current experimental conditions, we first propose a cascade-type three-level EIT semiconductor quantum well model. And in this model we consider the longitudinal optical phonons coupling between the bond state and anti-bond state. Subsequently, by using the multiple-scale method, we analytically study the dynamical properties of solitons in the cascade-type three-level EIT semiconductor quantum well with the CCRLOP. It is shown that when the CCRLOP strength is smaller, there exhibits the dark soliton in the EIT semiconductor quantum well. Only if the strength of the CCRLOP is larger, will in the system there exists bright soliton. That is to say, with increasing the strength of the CCRLOP, the soliton type of the system is converted from dark to bright soliton little by little. So, the temporal soliton type can be effectively controlled by the strength of the CCRLOP. In addition, we also find that the group velocity of the soliton can also be controlled by the strength of CCRLOP and the control light. These results may provide a theoretical basis for manipulating experimentally the dynamics of soliton in semiconductor quantum wells.

Acta Physica Sinica•Jan 1, 2017•9 citations

Phonon effect on an optically driven quantum dots device

Zhuo-Jie Wu, Ka‐Di Zhu, Xiao-Zhong Yuan +2 more

Physics Letters A•Aug 16, 2005•5 citations

Control of electromagnetically induced transparency via a hybrid semiconductor quantum dot–vanadium dioxide nanoparticle system

Naser Zamani, Ali Hatef, Hamid Nadgaran +1 more

We numerically investigate the electromagnetically induced transparency (EIT) of a hybrid system consisting of a three-level quantum dot (QD) in the vicinity of vanadium dioxide nanoparticle (VO2NP). VO2NP has semiconductor and metallic phases where the transition between the two phases occurs around a critical temperature. When the QD-VO2NP hybrid system interacts with continuous wave laser fields in an infrared regime, it supports a coherent coupling of exciton–polariton and exciton–plasmon polariton in semiconductor and metal phases of VO2NP, respectively. In our calculations a filling fraction factor controls the VO2NP phase transition. A probe and control laser field configuration is studied for the hybrid system to measure the absorption of QD through the filling fraction factor manipulations. We show that for the VO2NP semiconductor phase and proper geometrical configuration, the absorption spectrum profile of the QD represents an EIT with two peaks and a clear minimum. These two peaks merge to one through the VO2NP phase transition to metal. We also show that the absorption spectrum profile is modified by different orientations of the laser fields with the axis of the QD-VO2NP hybrid system. The innovation in comparison to other research in the field is that robust variation in the absorption profile through EIT is due to the phase transition in VO2NP without any structural change in the QD-VO2NP hybrid system. Our results can be employed to design nanothermal sensors, optical nanoswitches, and energy transfer devices.

Journal of Nanophotonics•Aug 19, 2017•7 citations

Local field effects on phonon-induced transparency in quantum dots embedded in a semiconductor medium

Yiwen Jiang, Ka‐Di Zhu

Applied Physics B•Nov 26, 2007•5 citations

Adjustable electromagnetically induced transparency and absorption, optical controlled-phase gate in semiconductor quantum wells

Xiao‐Qing Luo, Denglong Wang, Yanchao She +2 more

The European Physical Journal D•Apr 1, 2014•5 citations

Optical bistable switching in semiconductor heterostructure containing a quantum dot layer: The effect of phonons

Sukanta Kumar Tripathy, Smaranika Swain

Optik•Dec 6, 2012•4 citations
In the past few years, with developing the technology of electromagnetically induced transparency (EIT) and improving the semiconductor technology, it has become possible to realize the application of optical soliton to communication device. Studies show the reduction of group velocity of the optical soliton in EIT medium under weak driving condition, which possibly realizes the storing of optical pulses in information storage. More importantly, semiconductor quantum wells have the inherent advantages such as large electric dipole moments of the transitions, high nonlinear optical coefficients, small size, easily operating and integrating. So it is considered to be the most potential EIT medium to realize the application of quantum devices. The optical soliton behavior in the semiconductor quantum well is studied, which can provide a certain reference value for the practical application of information transmission and processing together quantum devices. Although there has been a series of researches on both linear and nonlinear optical properties in semiconductor quantum wells structures, few publications report the effects of the cross-coupling longitude-optical phonon (CCLOP) relaxation on its linear and nonlinear optical properties. However, to our knowledge, the electron-longitude-optical phonon scattering rate can be realized experimentally by varying the sub-picosecond range to the order of a picosecond. According to this, we in the paper study the effects of the CCLOP relaxation on its linear and nonlinear optical properties in a cascade-type three-level EIT semiconductor quantum well. According to the current experimental conditions, we first propose a cascade-type three-level EIT semiconductor quantum well model. And in this model we consider the longitudinal optical phonons coupling between the bond state and anti-bond state. Subsequently, by using the multiple-scale method, we analytically study the dynamical properties of solitons in the cascade-type three-level EIT semiconductor quantum well with the CCRLOP. It is shown that when the CCRLOP strength is smaller, there exhibits the dark soliton in the EIT semiconductor quantum well. Only if the strength of the CCRLOP is larger, will in the system there exists bright soliton. That is to say, with increasing the strength of the CCRLOP, the soliton type of the system is converted from dark to bright soliton little by little. So, the temporal soliton type can be effectively controlled by the strength of the CCRLOP. In addition, we also find that the group velocity of the soliton can also be controlled by the strength of CCRLOP and the control light. These results may provide a theoretical basis for manipulating experimentally the dynamics of soliton in semiconductor quantum wells.
We numerically investigate the electromagnetically induced transparency (EIT) of a hybrid system consisting of a three-level quantum dot (QD) in the vicinity of vanadium dioxide nanoparticle (VO2NP). VO2NP has semiconductor and metallic phases where the transition between the two phases occurs around a critical temperature. When the QD-VO2NP hybrid system interacts with continuous wave laser fields in an infrared regime, it supports a coherent coupling of exciton–polariton and exciton–plasmon polariton in semiconductor and metal phases of VO2NP, respectively. In our calculations a filling fraction factor controls the VO2NP phase transition. A probe and control laser field configuration is studied for the hybrid system to measure the absorption of QD through the filling fraction factor manipulations. We show that for the VO2NP semiconductor phase and proper geometrical configuration, the absorption spectrum profile of the QD represents an EIT with two peaks and a clear minimum. These two peaks merge to one through the VO2NP phase transition to metal. We also show that the absorption spectrum profile is modified by different orientations of the laser fields with the axis of the QD-VO2NP hybrid system. The innovation in comparison to other research in the field is that robust variation in the absorption profile through EIT is due to the phase transition in VO2NP without any structural change in the QD-VO2NP hybrid system. Our results can be employed to design nanothermal sensors, optical nanoswitches, and energy transfer devices.