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Bulletin of the American Physical Society

An integrated diamond nanophotonics platform for quantum optical networks

Mihir K. Bhaskar, Alp Sipahigil, Ruffin E. Evans, Денис Дмитриевич Сукачев, Christian N. Nguyen, Michael J. Burek, Bartholomeus Machielse, Johannes Borregaard, Haig A. Atikian, Charles Meuwly, Lachlan J. Rogers, Petr Siyushev, Mathias H. Metsch, Jose L Pacheco, Ryan M. Camacho, Edward S. Bielejec, Fedor Jelezko, Hongkun Park, Marko Lončar, Mikhail D. Lukin

Published Jun 8, 2017• 0 citations
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Efficient interfaces of quantum emitters and photons are fundamental to quantum networking. Silicon-vacancy (SiV) centers embedded in diamond nanophotonics are a leading approach due to their excellent optical and spin coherence; however, diamond’s weak nonlinearity and challenging fabrication limit long-term scalability. Here, we realize the first high-cooperativity ( C >1) coupling of individual SiV spin qubits in a scalable, hybrid-integrated gallium phosphide (GaP)-on-diamond nanophotonics platform. We fabricate more than 600 GaP nanophotonic cavities on a diamond substrate with a 99.5% yield. We confirm above-unity cooperativity and measure spin-relaxation times exceeding 0.4 ms at 4 K, which together enable single-shot readout of the SiV electron spin. These results, coupled with GaP’s strong nonlinear properties, establish GaP-on-diamond as a scalable planar platform for quantum networking applications.
The efficient interfacing of quantum emitters and photons is fundamental to quantum networking. Quantum defects embedded in integrated nanophotonic circuits are promising for such applications due to the deterministic light-matter interactions of high-cooperativity (C>1C>1C>1) cavity quantum electrodynamics and potential for scalable integration with active photonic processing. Silicon-vacancy (SiV) centers embedded in diamond nanophotonic cavities are a leading approach due to their excellent optical and spin coherence, however their long-term scalability is limited by the diamond itself, as its suspended geometry and weak nonlinearity necessitates coupling to a second processing chip. Here we realize the first high-cooperativity coupling of quantum defects to hybrid-integrated nanophotonics in a scalable, planar platform. We integrate more than 600 gallium phosphide (GaP) nanophotonic cavities on a diamond substrate with near-surface SiV centers. We examine a particular device with two strongly coupled SiV centers in detail, confirming above-unity cooperativity via multiple independent measurements. Application of an external magnetic field via a permanent magnet enables optical resolution of the SiV spin transitions from which we determine a spin-relaxation time T1>0.4T_1>0.4T1​>0.4 ms at 4 K. We utilize the high cooperativity coupling to observe spin-dependent transmission switching and the quantum jumps of the SiV spin via single-shot readout. These results, coupled with GaP's strong nonlinear properties, establish GaP-on-diamond as a scalable planar platform for quantum network applications.