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Acta Sinica Quantum Optica

Effect of Optical Carriers on Electron Spin Relaxation in a (110)-GaAs Quantum Well

刘晓波 LIU Xiao-bo, 张桐耀 ZHANG Tong-yao, 陈院森 CHEN Yuan-sen

Published Jan 1, 2017• 0 citations
Publisher
DOI
10.3788/jqo20172302.0013

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Electron-spin relaxation has been investigated in a variety of quantum confined structures including GaAs-based quantum wells and quantum wires as well as InP-based quantum wells, and it has been shown to exhibit ultrafast relaxation in the picosecond, and even in the femtosecond, range. This ultrafast relaxation has been used together with the exciton absorption nonlinearity as an novel principle of all-optical switching device which can avoid the speed limit due to the slow carrier lifetime in conventional switching devices. Experiments on GaAs-based quantum-well spin switches have shown 4-ps gate switch operation. Also, experimental analyses have shown the feasibility of these devices at a high contrast ratio (13 dB) and high repetition rate (40 GHz). The application of this device to a demultiplexer has been proposed.