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Russian Microelectronics

New Methods for Making the Qubits of a Solid-State Quantum Computer by Implantation of Single Highly Charged 31P Ions

Valery A. Zhukov

Published Nov 1, 2003• 0 citations
Publisher
DOI
10.1023/a:1027393911066

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The construction of micro- and nano-scale electronic devices that exploit the properties of single atoms have been proposed. A very promising device is a silicon based solid state quantum computer based on an array of single 31P atoms as qubits in a pure 28Si substrate. Operation of the device requires independent control, coupling and readout of the state of individual qubits. We have developed a construction strategy for a few qubit device based on ion implantation of the qubits into prefabricated cells. An ion energy of less than 20 keV is necessary to ensure the ion range is at the required depth in the substrate which is of the order of 20 nm. Single ion impacts are registered by the electrical transient induced in an external circuit. Electron Beam Lithography fabricated cells, containing electrodes of the required nanometre scale, have been implanted with 14 keV 31P ions and the pulse height spectrum of single ion impacts has been successfully recorded. Discrimination on the pulse height allows rejection of ions that suffer unacceptable straggling. This opens the way to the rapid construction of a two qubit device in the first instance that will test many of the essential mechanisms of a revolutionary solid state quantum computer.

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The construction of micro- and nano-scale electronic devices that exploit the properties of single atoms have been proposed. A very promising device is a silicon based solid state quantum computer based on an array of single 31P atoms as qubits in a pure 28Si substrate. Operation of the device requires independent control, coupling and readout of the state of individual qubits. We have developed a construction strategy for a few qubit device based on ion implantation of the qubits into prefabricated cells. An ion energy of less than 20 keV is necessary to ensure the ion range is at the required depth in the substrate which is of the order of 20 nm. Single ion impacts are registered by the electrical transient induced in an external circuit. Electron Beam Lithography fabricated cells, containing electrodes of the required nanometre scale, have been implanted with 14 keV 31P ions and the pulse height spectrum of single ion impacts has been successfully recorded. Discrimination on the pulse height allows rejection of ions that suffer unacceptable straggling. This opens the way to the rapid construction of a two qubit device in the first instance that will test many of the essential mechanisms of a revolutionary solid state quantum computer.
The construction of micro- and nano-scale electronic devices that exploit the properties of single atoms have been proposed. A very promising device is a silicon based solid state quantum computer based on an array of single 31P atoms as qubits in a pure 28Si substrate. Operation of the device requires independent control, coupling and readout of the state of individual qubits. We have developed a construction strategy for a few qubit device based on ion implantation of the qubits into prefabricated cells. An ion energy of less than 20 keV is necessary to ensure the ion range is at the required depth in the substrate which is of the order of 20 nm. Single ion impacts are registered by the electrical transient induced in an external circuit. Electron Beam Lithography fabricated cells, containing electrodes of the required nanometre scale, have been implanted with 14 keV 31P ions and the pulse height spectrum of single ion impacts has been successfully recorded. Discrimination on the pulse height allows rejection of ions that suffer unacceptable straggling. This opens the way to the rapid construction of a two qubit device in the first instance that will test many of the essential mechanisms of a revolutionary solid state quantum computer.