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IEICE Technical Report; IEICE Tech. Rep.

Electric and Magnetic Field Responses of Single-Electron Transistors Composed of Superconducting Island with Ferromagnetic Leads

Mizugaki Yoshinao, Masashi Takiguchi, Tamura Nobuyuki, Hiroshi Shimada

Published Apr 13, 2017• 0 citations
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arXiv:1901.01248•AIP Advances•May 1, 2022•1 citation
We show that charge transfer through a small superconducting (S) island of a single-electron transistor is strongly affected by vorticity. This interplay of charge and rotational degrees of freedom in a mesoscopic superconductor occurs through the effect of vorticity on the quantum mechanical spectrum of electron-hole excitations. The subgap quasiparticle levels in vortices can host an extra electron, thus suppressing the so-called parity effect in the S island. We propose to measure the collective dynamics of vorticity and electric charge via the charge pumping effect caused by alternating vortex entry and exit controlled by a periodic magnetic field.
We consider the transport properties of a single-electron transistor consisting of a diffusive normal-metal island and superconducting electrodes. We show that the interplay of a dissipative impedance of the gate electrode, a weak magnetic field, and a charging energy of the island causes a suppression of the critical supercurrent of the transistor. When the device is voltage biased, pumping of single electrons can be achieved by a periodic modulation of the gate voltage. We derive the analytic expressions for the error rates and show that they are suppressed by the applied magnetic field.
We present a single-electron device for the manipulation of charge states via quantum interference in nanostructured electrodes. Via self-inductance effects, we induce two independent magnetic fluxes in the electrodes and we demonstrate sensitivity to single charge states and magnetic field at variable temperature. Moreover, our approach allows us to demonstrate local and independent control of the single-particle conductance between nano-engineered tunnel junctions in a fully superconducting quantum interference single-electron transistor, thereby increasing the flexibility of our single-electron transistors. Our devices show a robust modulation of the current-to-flux transfer function via control currents while exploiting the single-electron filling of a mesoscopic superconducting island. Further applications of the device concept to single charge manipulation and magnetic-flux sensing are also discussed.