A stochastic limit approach to the fractional quantum Hall effect
Luigi Accardi, Fabio Bagarello
Abstract
We study three diffent approximations of the usual many-body model for the fractional quantum Hall effect (FQHE) consisting in a two-dimensional electron gas (2DEG) in a uniform electric and magnetic field.For each of them we consider the stochastic limit and we find the quantum Langevin equation and the generators of the master equation.This allows us to calculate the explicit form of the conductivity and the resistivity tensors.The relevance of the levels beyond the lowest Landau's one is explained, and a fine tuning relation between the electric and the magnetic fields is obtained from the stochastic resonance principle.It is shown that this relation could be at the origin of the quantization of the resistivity tensor.