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Optical Materials Express

Laser spectroscopy of NV- and NV0 colour centres in synthetic diamond

Elisabeth Fraczek, Vasili G. Savitski, Matthew W. Dale, Ben G. Breeze, Phil Diggle, Matthew Markham, Andrew Bennett, Harpreet K. Dhillon, Mark E. Newton, Alan J. Kemp

Published Jun 22, 2017• 57 citations
Publisher

Abstract

In this paper, we analyse the prospects for using nitrogen-vacancy centre (NV) containing diamond as a laser gain material by measuring its key laser related parameters. Synthetic chemical vapour deposition grown diamond samples with an NV concentration of ~1 ppm have been selected because of their relatively high NV concentration and low background absorption in comparison to other samples available to us. For the samples measured, the luminescence lifetimes of the NV- and NV0 centres were measured to be 8±1 ns and 20±1 ns respectively. The respective peak stimulated emission cross-sections were (3.6±0.1)×10-17 cm2 and (1.7±0.1)×10-17 cm2. These measurements were combined with absorption measurements to calculate the gain spectra for NV- and NV0 for differing inversion levels. Such calculations indicate that gains approaching those required for laser operation may be possible with one of the samples tested and for the NV- centre.

DOI
10.1364/ome.7.002571

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In this paper, we analyse the prospects for using nitrogen-vacancy centre (NV) containing diamond as a laser gain material by measuring its key laser related parameters. Synthetic chemical vapour deposition grown diamond samples with an NV concentration of ~1 ppm have been selected because of their relatively high NV concentration and low background absorption in comparison to other samples available to us. For the samples measured, the luminescence lifetimes of the NV- and NV0 centres were measured to be 8±1 ns and 20±1 ns respectively. The respective peak stimulated emission cross-sections were (3.6±0.1)×10-17 cm2 and (1.7±0.1)×10-17 cm2. These measurements were combined with absorption measurements to calculate the gain spectra for NV- and NV0 for differing inversion levels. Such calculations indicate that gains approaching those required for laser operation may be possible with one of the samples tested and for the NV- centre.
In this paper, prospects of using diamond with NV− centers as a gain medium have been studied. Spectroscopic characterization of NV− centers in diamond as well as absorption saturation and pump-probe experiments have been carried out. Absorption and emission cross-sections were estimated to be 2.8 × 10-17 cm2 and 4.3 × 10-17 cm2 at the maximum of absorption and emission bands, respectively. It was observed from emission spectra under pulse excitation that some NV− are photoionized to NV0 centers with ZPL at 575 nm. Room temperature luminescence lifetime of NV− centers was measured to be 12ns, which is close to the previously reported lifetime in bulk diamond (~13ns). Saturated transmission was only about 11% of calculated values even at energy fluence much higher than the saturation flux. Two excited state absorptions (ESAs) with different relaxation times (“fast-decay” and “slow-decay with relaxation times of ~500 ns and several tens of microseconds, respectively) were revealed in transmission decay kinetics at 632 nm. Kinetics of transmission at 670 nm was dominated by “slow-decay” ESA process. Kinetics of dk/k0 in shorter wavelength were strongly dominated by “fast-decay” ESA process. These results definitively indicate that stimulated emission of NV− centers is suppressed by photoionization and ESAs and the possibility of diamond lasers based on NV− centers is low.
One of the most common impurities in synthetic diamond is single substitutional nitrogen, which is incorporated in the diamond lattice substituting a carbon atom. If the nitrogen is adjacent to a vacancy in the diamond lattice, it forms the nitrogen-vacancy (NV) colour centre (CC). The negatively charged state of this CC, NV-, is particularly well studied since its quantum properties are suitable for applications such as quantum information processing, single-photon sources and optical magnetometry. NV CCs in the neutral state (NV0) are less widely studied. This CC exhibits broadband luminescence at slightly shorter wavelengths than NV-, and hence is also potentially of interest for tuneable and ultrafast visible laser applications. In this report, we present a detailed study of the laser-related spectroscopic properties of a diamond containing NV0 and NV-CCs.
We report on the spectroscopic characterization, absorption saturation, and excited-state dynamics of GR1 centers in synthetic diamonds. The non-linear optical measurements reveal an efficient bleaching of the GR1 center’s ground level under ns-pulsed 633 nm excitation. The maxima of absorption and emission cross sections were estimated to be 4.5 × 10−17 cm2 and 9 × 10−17 cm2 at 630 nm and 780 nm, respectively. The radiative lifetime of the excited level was estimated to be 8.5 ns. The 658 nm probe kinetics uncovered relaxation of 1T2 excited level going predominantly to a metastable state with a lifetime of 220 μs. An induced absorption detected with the use of a highly concentrated diamond sample could be due to up-conversion and photoionization processes in additional impurity-vacancy center with absorption at the short-wavelength tail of GR1. The results presented here indicate that synthetic diamonds with GR1 centers could serve as near infrared gain media or passive Q-switchers for laser cavities over the 633–750 nm spectral range. Optimization of the center concentration and the crystal parameters are required to minimize the induced absorption at the lasing wavelengths.
Abstract The nitrogen-vacancy colour centre in diamond is emerging as one of the most important solid-state quantum systems. It has applications to fields including high-precision sensing, quantum computing, single photon communication, metrology, nanoscale magnetic imaging and biosensing. For all of these applications, a high quantum yield of emitted photons is desirable. However, diamond samples engineered to have high densities of nitrogen-vacancy centres show levels of brightness varying significantly within single batches, or even within the same sample. Here we show that nearby nitrogen impurities quench emission of nitrogen-vacancy centres via non-radiative transitions, resulting in a reduced fluorescence quantum yield. We monitored the emission properties of nitrogen-vacancy centre ensembles from synthetic diamond samples with different concentrations of nitrogen impurities. All samples were irradiated with high energy electrons to create high densities of nitrogen-vacancy centres relative to the concentration of nitrogen impurities. While at low nitrogen densities of 1.81 ppm we measured a lifetime of 13.9 ns, we observed a strong reduction in lifetime with increasing nitrogen density. We measure a lifetime as low as 4.4 ns at a nitrogen density of 380 ppm. The change in lifetime matches a reduction in relative fluorescence quantum yield from 77.4% to 32% with an increase in nitrogen density from 88 ppm to 380 ppm, respectively. These results will inform the conditions required to optimise the properties of diamond crystals devices based on the fluorescence of nitrogen-vacancy centres. Furthermore, this work provides insights into the origin of inhomogeneities observed in high-density nitrogen-vacancy ensembles within diamonds and nanodiamonds.
Abstract Ensembles of nitrogen-vacancy (NV) centres in diamond are a leading platform for practical quantum sensors. Reproducible and scalable fabrication of NV-ensembles with desired properties is crucial, as is an understanding of how those properties influence performance. This work addresses these issues by characterising nitrogen-doped diamond produced by the chemical vapour deposition (CVD) method across a range of synthesis conditions. This is shown to produce material with widely differing absorption characteristics, which is linked to the level of defects other than substitutional nitrogen (NS) and NV. In such material, the achievable concentration of NV− ([NV−]) is found to be influenced by the as-grown properties. At the 10–20 ppm level for [NS], the production of CVD-grown material with strain levels sufficient not to limit achievable device sensitivity is demonstrated and a favourable product of [NV−] and T 2 * is obtained. Additionally, reproducible properties over a batch of 23 samples from a single synthesis run are achieved, which appears promising for the scalability efforts underway in this area of research.
The use of diamond colour centres such as the nitrogen-vacancy (NV) centre is increasingly enabling quantum sensing and computing applications. Novel concepts like cavity coupling and readout, laser-threshold magnetometry and multi-pass geometries allow significantly improved sensitivity and performance via increased signals and strong light fields. Enabling material properties for these techniques and their further improvements are low optical material losses via optical absorption of signal light and low birefringence. Here, we study systematically the behaviour of absorption around 700 nm and birefringence with increasing nitrogen- and NV-doping, as well as their behaviour during NV creation via diamond growth, electron beam irradiation and annealing treatments. Absorption correlates with increased nitrogen doping yet substitutional nitrogen does not seem to be the direct absorber. Birefringence reduces with increasing nitrogen doping. We identify multiple crystal defect concentrations via absorption spectroscopy and their changes during the material processing steps and thus identify potential causes of absorption and birefringence as well as strategies to fabricate chemical vapour deposition diamonds with high NV density yet low absorption and low birefringence. This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'.