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The Japan Society of Applied Physics

Quantum interference of single photons from a nitrogen luminescence enter in GaAs

Liao Zhang, Michio Ikezawa, Yoshiki Sakuma, Kazuaki Sakoda, Yasuaki Masumoto

Published Feb 8, 2016• 0 citations
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We studied optical properties of isoelectronic traps in nitrogen δ-doped GaAs by micro-photoluminescence (µ-PL) spectroscopy. We found that these nitrogen impurity centers (NNA) emit photons with nearly identical emission energy at 1475 meV and polarization direction. Furthermore, single photon generation from a single impurity center was confirmed by a strong photon antibunching under the continuous optical excitation at 5 K. Our results suggest that the nitrogen impurity center in GaAs might be well suited for the energetically-defined single photon source for the quantum information application.