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The Japan Society of Applied Physics

Superconducting Phase Shifters Using PdNi Thin Film Patterns

Shozo TANIGUCHI

Published Feb 6, 2014• 0 citations
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Magnetic control of superconducting phase-shifters with experimental verification

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Turnable superconducting millimeter-wave phase shifters are discussed. The tuning mechanism is based on inductance modulation of NbN microstrips by excess quasiparticle injection. When measured by a DC method, using the interference patterns and resonances of specially designed DC SQUIDs, the inductance of NbN microstrips can be varied by up to 300%. Based on these results, superconducting microstrip interferometers to operate as low-power 100 GHz phase shifters were designed and fabricated. The 100 GHz signal is coupled into and out of the interferometers by finline antennas. Amplitude modulation of the output is used as the criterion for phase shift in one of the interferometer branches. Thin superconducting films (thinner than the penetration depth) and dielectric layers are needed to achieve tunability of the inductance. The conflicting requirements of tunability and efficient signal coupling are quantified in the interferometer testing, and the range of parameter optimization is bracketed. The elements of this required optimization are presented.

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A hybrid phase shifter circuit based on TlCaBaCuO superconducting thin films

G. Subramanyam, Vikram J. Kapoor, K. B. Bhasin

A superconductor-semiconductor hybrid reflection-type phase shifter circuit has been designed, fabricated, and characterized for 180/spl deg/ phase bit with center frequency of 4 GHz and bandwidth of 0.5 GHz for operation at 77 K. All of the passive components of the phase shifter circuit such as input/output feed lines, 3 dB Lange coupler, impedance matching networks, and transmission lines consisted of thallium based superconducting TlCaBaCuO thin films of 4000 /spl Aring/ thickness on lanthanum aluminate substrate. Metal-Schottky field-effect-transistors (MESFET's) on GaAs semiconductor were used as active devices for switching action (on-state and off-state) in the phase shifter circuit. The phase shift and insertion losses were investigated as a function of frequency from 3.6 to 4.6 GHz at 77 K. The circuit exhibited a fairly flat response of 180/spl deg/ phase shift with a maximum deviation of less than 2/spl deg/ and a maximum insertion loss of 2 dB for on-state and 2.2 dB for off-state conditions over 0.5 GHz bandwidth at 4 GHz. The insertion losses were also fairly flat within the bandwidth. The insertion losses were constant between 50 and 80 K, giving the circuit a large range of operation at or below 77 K. The performance of this circuit as compared to a gold microstrip-semiconductor circuit designed identically was superior by a factor of 1.5, and may be due to lower conductor losses and lower surface resistance in the superconducting microstrips.>

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Tantalum Thin Films Sputtered on Silicon and on Different Seed Layers: Material Characterization and Coplanar Waveguide Resonator Performance

Moritz Singer, Benedikt Schoof, H. M. Gupta +3 more

Superconducting qubits are a promising platform for large-scale quantum computing. Besides the Josephson junction, most parts of a superconducting qubit are made of a planar, patterned superconducting thin films. In the past, most qubit architectures have relied on niobium (Nb) as the material of choice for the superconducting layer. However, there is also a variety of alternative materials with potentially less losses, which may thereby result in increased qubit performance. One such material is tantalum (Ta), for which high-performance qubit components have already been demonstrated. In this study, we report the sputter-deposition of Ta thin films directly on heated and unheated silicon (Si) substrates as well as onto different, nanometer-thin seed layers from tantalum nitride (TaN), titanium nitride (TiN) or aluminum nitride (AIN) that were deposited first. The thin films are characterized in terms of surface morphology, crystal structure, phase composition, critical temperature, residual resistance ratio (RRR) and RF-performance. We obtain thin films indicative of pure alpha-Ta for high temperature (600°C) sputtering directly on silicon and for Ta deposited on TaN or TiN seed layers. Coplanar waveguide (CPW) resonator measurements show that the Ta deposited directly on the heated silicon substrate performs best with internal quality factors Qi reaching 1xl06in the single-photon regime, measured at T=100 mK.

arXiv:2409.06041•IEEE International Conference on Quantum Computing and Engineering (QCE)•Sep 15, 2024•3 citations
Turnable superconducting millimeter-wave phase shifters are discussed. The tuning mechanism is based on inductance modulation of NbN microstrips by excess quasiparticle injection. When measured by a DC method, using the interference patterns and resonances of specially designed DC SQUIDs, the inductance of NbN microstrips can be varied by up to 300%. Based on these results, superconducting microstrip interferometers to operate as low-power 100 GHz phase shifters were designed and fabricated. The 100 GHz signal is coupled into and out of the interferometers by finline antennas. Amplitude modulation of the output is used as the criterion for phase shift in one of the interferometer branches. Thin superconducting films (thinner than the penetration depth) and dielectric layers are needed to achieve tunability of the inductance. The conflicting requirements of tunability and efficient signal coupling are quantified in the interferometer testing, and the range of parameter optimization is bracketed. The elements of this required optimization are presented.
A superconductor-semiconductor hybrid reflection-type phase shifter circuit has been designed, fabricated, and characterized for 180/spl deg/ phase bit with center frequency of 4 GHz and bandwidth of 0.5 GHz for operation at 77 K. All of the passive components of the phase shifter circuit such as input/output feed lines, 3 dB Lange coupler, impedance matching networks, and transmission lines consisted of thallium based superconducting TlCaBaCuO thin films of 4000 /spl Aring/ thickness on lanthanum aluminate substrate. Metal-Schottky field-effect-transistors (MESFET's) on GaAs semiconductor were used as active devices for switching action (on-state and off-state) in the phase shifter circuit. The phase shift and insertion losses were investigated as a function of frequency from 3.6 to 4.6 GHz at 77 K. The circuit exhibited a fairly flat response of 180/spl deg/ phase shift with a maximum deviation of less than 2/spl deg/ and a maximum insertion loss of 2 dB for on-state and 2.2 dB for off-state conditions over 0.5 GHz bandwidth at 4 GHz. The insertion losses were also fairly flat within the bandwidth. The insertion losses were constant between 50 and 80 K, giving the circuit a large range of operation at or below 77 K. The performance of this circuit as compared to a gold microstrip-semiconductor circuit designed identically was superior by a factor of 1.5, and may be due to lower conductor losses and lower surface resistance in the superconducting microstrips.>
Superconducting qubits are a promising platform for large-scale quantum computing. Besides the Josephson junction, most parts of a superconducting qubit are made of a planar, patterned superconducting thin films. In the past, most qubit architectures have relied on niobium (Nb) as the material of choice for the superconducting layer. However, there is also a variety of alternative materials with potentially less losses, which may thereby result in increased qubit performance. One such material is tantalum (Ta), for which high-performance qubit components have already been demonstrated. In this study, we report the sputter-deposition of Ta thin films directly on heated and unheated silicon (Si) substrates as well as onto different, nanometer-thin seed layers from tantalum nitride (TaN), titanium nitride (TiN) or aluminum nitride (AIN) that were deposited first. The thin films are characterized in terms of surface morphology, crystal structure, phase composition, critical temperature, residual resistance ratio (RRR) and RF-performance. We obtain thin films indicative of pure alpha-Ta for high temperature (600°C) sputtering directly on silicon and for Ta deposited on TaN or TiN seed layers. Coplanar waveguide (CPW) resonator measurements show that the Ta deposited directly on the heated silicon substrate performs best with internal quality factors Qi reaching 1xl06in the single-photon regime, measured at T=100 mK.