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Novel CMOS sensors for improved quantum imaging

Leonardo Gasparini, Bänz Bessire, Manuel Unternährer, André Stefanov, D. L. Boïko, Matteo Perenzoni, David Stoppa

Published Apr 11, 2017• 3 citations
Publisher
DOI
10.1117/2.1201701.006847

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Quantum resources can provide supersensitive performance in optical imaging. Detecting entangled photon pairs from spontaneous parametric down conversion (SPDC) with single-photon avalanche diode (SPAD) image sensor arrays (ISAs) enables practical wide-field quantum-enhanced imaging. However, matching the SPDC wavelength to the peak detection efficiency range of complementary metal-oxide-semiconductor (CMOS) compatible mass-producible SPAD-ISAs has remained technologically elusive, resulting in low imaging speeds to date. Here, we show that a recently developed visible-wavelength entangled photon source enables high-speed quantum imaging. By operating at high detection efficiency of a SPAD-ISA, we increase acquisition speed by more than an order of magnitude compared to previous similar quantum imaging demonstrations. Besides being fast, the quantum-enhanced phase imager operating at short wavelengths retrieves nanometer scale height differences, tested by imaging evaporated silica and protein microarray spots on glass samples, with sensitivity improved by a factor of 1.351 ± 0.004 over equivalent ideal classical imaging. This work represents an important stepping stone towards scalable real-world quantum imaging advantage, and may find use in biomedical and industrial applications as well as fundamental research.