Abstract How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-Tc cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at twice the rate of doping in the low doping regime, but this rate is halved at optimal doping. In the heavily doped regime, we find both strong electron-hole asymmetry and a persistent presence of Mott spectral features. Finally, we discuss the applicability of the single-band Hubbard model to describe the evolution of nodal spectra measured by angle-resolved photoemission spectroscopy (ARPES) on the single-layer cuprate La2−xSrxCuO4 (0 ≤ x ≤ 0.15). This work benchmarks the predictive power of the Hubbard model for electronic properties of high-Tc cuprates.Abstract How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-Tc cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at twice the rate of doping in the low doping regime, but this rate is halved at optimal doping. In the heavily doped regime, we find both strong electron-hole asymmetry and a persistent presence of Mott spectral features. Finally, we discuss the applicability of the single-band Hubbard model to describe the evolution of nodal spectra measured by angle-resolved photoemission spectroscopy (ARPES) on the single-layer cuprate La2−xSrxCuO4 (0 ≤ x ≤ 0.15). This work benchmarks the predictive power of the Hubbard model for electronic properties of high-Tc cuprates.

arXiv:1909.09288Communications PhysicsNov 13, 202017 citations

Doping dependence of quasi-particle gaps at low hole doping in the Hubbard model

Markus Aichhorn, Enrico Arrigoni, Michael Potthoff +1 more

APSMar 1, 20070 citations

Charge correlation, doublon-holon binding and screening in the doped Hubbard model

Edin Kapetanović, Guglielmo Nicola Gigante, Malte Schüler +2 more

Electronic correlations arise from the competition between the electrons' kinetic and Coulomb interaction energy and give rise to a rich phase diagram and many emergent quasiparticles. The binding of doubly-occupied and empty sites into a doublon-holon exciton is an example of this in the Hubbard model. Unlike traditional excitons in semiconductors, in the Hubbard model it is the kinetic energy which provides the binding energy. Upon doping, we find the emergence of exciton complexes, such as a holon-doublon-holon trion. The appearance of these low-lying collective excitations make screening more effective in the doped system. As a result, Hubbard-based modelling of correlated materials should use different values of $U$ for the doped system and the insulating parent compound, which we illustrate using the cuprates as an example.Electronic correlations arise from the competition between the electrons' kinetic and Coulomb interaction energy and give rise to a rich phase diagram and many emergent quasiparticles. The binding of doubly-occupied and empty sites into a doublon-holon exciton is an example of this in the Hubbard model. Unlike traditional excitons in semiconductors, in the Hubbard model it is the kinetic energy which provides the binding energy. Upon doping, we find the emergence of exciton complexes, such as a holon-doublon-holon trion. The appearance of these low-lying collective excitations make screening more effective in the doped system. As a result, Hubbard-based modelling of correlated materials should use different values of $U$ for the doped system and the insulating parent compound, which we illustrate using the cuprates as an example.

arXiv:2409.05640Sep 9, 20240 citations

U

for the doped system and the insulating parent compound, which we illustrate using the cuprates as an example.