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Bulletin of the American Physical Society

Ultra-broadband photon storage in hot atomic barium vapor

Bin Fang, Shuai Dong, Seth J. Meiselman, Offir Cohen, Virginia O. Lorenz

Published Jun 7, 2017• 0 citations
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Optical quantum memory describes the process of on-demand storage and retrieval of single photon-level quantum states, and is a critical enabling technology for many quantum applications. Memory bandwidth plays an important role in these applications, as it determines the pulse durations compatible with the memory and places an upper bound on the clock rate and processing speed of a quantum device. Here we present experimental results of an atomic barium quantum memory that enables storage and retrieval of ultra-broadband$(> 800$GHz) signal photons with high storage efficiency [95.6(3)%] and low noise [3.8(6)$\times 10^{-5}$noise photons]. Experimental Results.- The quantum memory operation is based on the ground$(6s^{2}\ {}^{1}S_{0})$, excited$(6s6p \ {}^{1}P_{1})$, and metastable$(6s5d \ {}^{1}D_{2})$orbital states of atomic barium in a$\Lambda$-type configuration. The barium vapor is created in an 800–900 °C barium heat pipe oven with 0–1000 torr tunable argon buffer gas pressure. The ground-excited transition at 553.5 nm features large and tunable homogeneous collisional broadening due to the argon buffer gas and a peak optical depth of$d=50$. The memory operates in the so-called absorb-then-transfer (ATT) regime, in which the signal field is linearly absorbed along the ground-excited transition, whose collisionally broadened lineshape enables efficient absorption of ultra-broadband photons; the resulting atomic polarization is transferred into a so-called spin wave by application of a strong$[O(10 \ \text{uJ}),100\ \text{fs}]$control pulse along the excited-metastable transition at 1500 nm. The storage state has a 0(0.1) second coherence lifetime in the bare atom [1], but this is reduced to the$O(\text{ns})$level due to motional dephasing [0.49(1) ns measured memory lifetime]. The memory experiment is repeated at a repetition rate of 1 kHz. The total end-to-end efficiency of the memory at 900°C is 31(1)%, which is limited by available control field power.

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)•Jun 26, 2023•0 citations
Optical quantum memory describes the process of on-demand storage and retrieval of single photon-level quantum states, and is a critical enabling technology for many quantum applications. Memory bandwidth plays an important role in these applications, as it determines the pulse durations compatible with the memory and places an upper bound on the clock rate and processing speed of a quantum device. Here we present experimental results of an atomic barium quantum memory that enables storage and retrieval of ultra-broadband(>800(> 800(>800GHz) signal photons with high storage efficiency [95.6(3)%] and low noise [3.8(6)×10−5\times 10^{-5}×10−5noise photons]. Experimental Results.- The quantum memory operation is based on the ground(6s2 1S0)(6s^{2}\ {}^{1}S_{0})(6s2 1S0​), excited(6s6p 1P1)(6s6p \ {}^{1}P_{1})(6s6p 1P1​), and metastable(6s5d 1D2)(6s5d \ {}^{1}D_{2})(6s5d 1D2​)orbital states of atomic barium in aΛ\LambdaΛ-type configuration. The barium vapor is created in an 800–900 °C barium heat pipe oven with 0–1000 torr tunable argon buffer gas pressure. The ground-excited transition at 553.5 nm features large and tunable homogeneous collisional broadening due to the argon buffer gas and a peak optical depth ofd=50d=50d=50. The memory operates in the so-called absorb-then-transfer (ATT) regime, in which the signal field is linearly absorbed along the ground-excited transition, whose collisionally broadened lineshape enables efficient absorption of ultra-broadband photons; the resulting atomic polarization is transferred into a so-called spin wave by application of a strong[O(10 uJ),100 fs][O(10 \ \text{uJ}),100\ \text{fs}][O(10 uJ),100 fs]control pulse along the excited-metastable transition at 1500 nm. The storage state has a 0(0.1) second coherence lifetime in the bare atom [1], but this is reduced to theO(ns)O(\text{ns})O(ns)level due to motional dephasing [0.49(1) ns measured memory lifetime]. The memory experiment is repeated at a repetition rate of 1 kHz. The total end-to-end efficiency of the memory at 900°C is 31(1)%, which is limited by available control field power.