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Quantum Information and Measurement (QIM)

Emission Lifetime Measurement of Silicon Vacancy in Diamond by Single-Photon Frequency Upconversion

Youying Rong, Jing Ma, Botao Wu, H. Pan, E Wu

Published Jan 1, 2017• 0 citations
Publisher

Abstract

We achieve frequency upconversion of fluorescence from SiV center in bulk diamond. The emission decay is obtained by measuring the upconverted photons with pump delay varying. Lifetime of the SiV center is about 0.54 ns.
DOI
10.1364/qim.2017.qw3a.2

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Abstract We report a method with high time resolution to measure the excited-state lifetime of silicon vacancy centers in bulk diamond avoiding timing jitter from the single-photon detectors. Frequency upconversion of the fluorescence emitted from silicon vacancy centers was achieved from 738 nm to 436 nm via sum frequency generation with a short pump pulse. The excited-state lifetime can be obtained by measuring the intensity of upconverted light while the pump delay changes. As a probe, a pump laser with pulse duration of 11 ps provided a high temporal resolution of the measurement. The lifetime extracted from the pump–probe curve was 0.755 ns, which was comparable to the timing jitter of the single-photon detectors.
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We use a simple and effective experimental method for determining the radiative quantum yield of single silicon-vacancy centers (SiV) in nanometric-sized diamonds (NDs). It is based on variations in the luminescence lifetimes of SiVs induced by a controlled change in the NDs' dielectric environment. The deposition of a high refractive index immersion oil on a thin polymer sample containing NDs with an average size of 20 nm induces a noticeable shortening of SiV lifetimes, a clear signature of a strong radiative contribution to the decays. While SiV centers were generally considered to be weak quantum emitters, we demonstrate that single SiV centers in nanodiamonds have a quantum efficiency up to 60%, under ambient conditions. This quantum efficiency is very similar to that of the negatively charged nitrogen-vacancy centers, which we measured using the same approach. This feature makes single SiV attractive as bright, high-purity single-photon sources for quantum technologies.
The silicon vacancy (SiV) color centers in diamond have significant potential in the fields of quantum information, nanophotonics, bioimaging and sensing, due to its good structural stability at room temperature, strong photostability, short luminescence lifetime, narrow zero-phonon line bandwidth, and avoidance of biological autofluorescence. They have attracted extensive attention and in-depth research from researchers. The applications of SiV color centers in the above areas require addressing key issues such as control over the number and charge state of SiV color centers in diamond, as well as improving the luminous efficiency. Therefore, this review summarizes some recent relevant research progress, including common methods for preparing SiV color centers, control over their luminescence intensity, preparation of SiV single-photon sources, and research on the control of SiV color center charge states. Based on these, an outlook is provided for the preparation and application of SiV color centers in diamond.