Non-adiabatic two-qubit gate proposals for trapped-ion systems offer superior performance and flexibility over adiabatic schemes at the cost of increased laser control requirements. Existing fast gate schemes are limited by single-qubit transition errors, which constrain the total number of pulses in high-fidelity solutions. We introduce an improved gate search scheme that enables both local and non-local two-qubit gates in chains containing tens of ions. These protocols use a multi-objective machine design approach that incorporates dominant sources of error in the design to ensure the solutions are compatible with existing fast laser controls. We also generalize previous schemes by allowing for unpaired pulses during the gate evolution. By imposing symmetries on the pulse sequences, we eliminate susceptibility to laser phase noise and further simplify the multi-mode control over the state-dependent motion of the ion crystal. We perform a comprehensive analysis of expected gate performance in the presence of random and systematic experimental errors to demonstrate the feasibility of performing microsecond two-qubit gates between arbitrary ion pairs in current linear ion-trap processors of up to $50$ ions with fidelities approaching $99.9\%$ .Non-adiabatic two-qubit gate proposals for trapped-ion systems offer superior performance and flexibility over adiabatic schemes at the cost of increased laser control requirements. Existing fast gate schemes are limited by single-qubit transition errors, which constrain the total number of pulses in high-fidelity solutions. We introduce an improved gate search scheme that enables both local and non-local two-qubit gates in chains containing tens of ions. These protocols use a multi-objective machine design approach that incorporates dominant sources of error in the design to ensure the solutions are compatible with existing fast laser controls. We also generalize previous schemes by allowing for unpaired pulses during the gate evolution. By imposing symmetries on the pulse sequences, we eliminate susceptibility to laser phase noise and further simplify the multi-mode control over the state-dependent motion of the ion crystal. We perform a comprehensive analysis of expected gate performance in the presence of random and systematic experimental errors to demonstrate the feasibility of performing microsecond two-qubit gates between arbitrary ion pairs in current linear ion-trap processors of up to $50$ ions with fidelities approaching $99.9\%$.

arXiv:2508.07593Physical Review AApr 22, 20262 citations

Progress in Trapped-Ion Quantum Simulation

Michael Foss‐Feig, Guido Pagano, Andrew C. Potter +1 more

Trapped ions offer long coherence times and high-fidelity, programmable quantum operations, making them a promising platform for quantum simulation of condensed matter systems, quantum dynamics, and problems related to high-energy physics. We review selected developments in trapped-ion qubits and architectures and discuss quantum simulation applications that utilize these emerging capabilities. This review emphasizes developments in digital (gate-based) quantum simulations that exploit trapped-ion hardware capabilities, such as flexible qubit connectivity, selective midcircuit measurement, and classical feedback, to simulate models with long-range interactions, explore nonunitary dynamics, compress simulations of states with limited entanglement, and reduce the circuit depths required to prepare or simulate long-range entangled states.Trapped ions offer long coherence times and high-fidelity, programmable quantum operations, making them a promising platform for quantum simulation of condensed matter systems, quantum dynamics, and problems related to high-energy physics. We review selected developments in trapped-ion qubits and architectures and discuss quantum simulation applications that utilize these emerging capabilities. This review emphasizes developments in digital (gate-based) quantum simulations that exploit trapped-ion hardware capabilities, such as flexible qubit connectivity, selective midcircuit measurement, and classical feedback, to simulate models with long-range interactions, explore nonunitary dynamics, compress simulations of states with limited entanglement, and reduce the circuit depths required to prepare or simulate long-range entangled states.

Annual Review of Condensed Matter PhysicsOct 31, 202433 citations

Entangling gates in trapped ions using arbitrary individual addressing and pulse shaping

Caroline Figgatt, Shantanu Debnath, Norbert M. Linke +2 more

Bulletin of the American Physical SocietyJun 9, 20150 citations

Quantum Information Processing with Trapped Rydberg Ions

Katrin Bolsmann, Markus Müller, Thiago Lucena Macedo Guedes +2 more

Combining the strong, long-range interactions of cold Rydberg atoms with the controllability of trapped ions, trapped Rydberg ions provide a promising platform for scalable quantum information processing. As demonstrated in a breakthrough experiment [1], microwave dressing of Rydberg states induces permanent rotating dipole moments leading to strong interactions between highly excited ions. Due to the separation of timescales, the fast electronic dynamics of Rydberg ions decouple from the slower motional modes of the linear Coulomb crystal, which typically mediate entangling gates in ground-state ion systems. Therefore, Rydberg ions enable significantly faster gate operations. We demonstrate how the unique properties of trapped Rydberg ions can be exploited to realize fast and high-fidelity entangling gates, along with the associated challenges and strategies to overcome them. Different types of gate protocols for two- and three-qubit entangling gates with trapped Rydberg ions are presented and sources of infidelity are analyzed.Combining the strong, long-range interactions of cold Rydberg atoms with the controllability of trapped ions, trapped Rydberg ions provide a promising platform for scalable quantum information processing. As demonstrated in a breakthrough experiment [1], microwave dressing of Rydberg states induces permanent rotating dipole moments leading to strong interactions between highly excited ions. Due to the separation of timescales, the fast electronic dynamics of Rydberg ions decouple from the slower motional modes of the linear Coulomb crystal, which typically mediate entangling gates in ground-state ion systems. Therefore, Rydberg ions enable significantly faster gate operations. We demonstrate how the unique properties of trapped Rydberg ions can be exploited to realize fast and high-fidelity entangling gates, along with the associated challenges and strategies to overcome them. Different types of gate protocols for two- and three-qubit entangling gates with trapped Rydberg ions are presented and sources of infidelity are analyzed.

Jan 1, 20250 citations

Trapped Ions and Their Applications

Galina A. Nemova

SPIE eBooksNov 6, 20190 citations

50

ions with fidelities approaching

99.9\%