Experimental Angular Resolved Luminescence Measurements of Eu Ions in MgF $_{2}$ Experimental Angular Resolved Luminescence Measurements of Eu Ions in MgF$_{2}$

Aldo S. Ramı́rez-Duverger, Raúl Garcı́a-Llamas, Raul Aceves Torres

Bulletin of the American Physical SocietyJun 7, 20120 citations

Optical probing of Eu ions confined in an RF trap

Pushpa M. Rao, Anita Gupta

PramanaDec 20, 20111 citation

Observation of single optical site of Eu and Mg codoped GaN grown by NH3-source molecular beam epitaxy

Hiroto Sekiguchi, Masaru Sakai, Takuho Kamada +3 more

Eu-doped GaN (GaN:Eu) is a promising solid-state material for quantum information devices owing to its ideal quantum levels. However, a decrease of Eu concentration and the unification of optical sites are required for these devices to access an Eu ion. In this article, the effect of Eu concentration on the optical properties of Mg-codoped GaN:Eu was evaluated. The photoluminescence intensity from Eu ions increased linearly with increasing Eu concentration up to 1 × 1019 cm−3, beyond which the intensity saturated. This resulted from the increase of the sharp luminescence line at 620.5 nm (site A), which has a large excitation cross section, with increasing Eu concentration in the range of low Eu concentrations; an excess Eu concentration leads to the formation of other types of optical sites with a low transfer efficiency or inactive sites. For a low Eu concentration of 3 × 1018 cm−3, all optical sites except a specific optical site corresponding to site A disappeared, and the unification of optical sites was suggested. This result is expected to be valuable to realize quantum information devices.Eu-doped GaN (GaN:Eu) is a promising solid-state material for quantum information devices owing to its ideal quantum levels. However, a decrease of Eu concentration and the unification of optical sites are required for these devices to access an Eu ion. In this article, the effect of Eu concentration on the optical properties of Mg-codoped GaN:Eu was evaluated. The photoluminescence intensity from Eu ions increased linearly with increasing Eu concentration up to 1 × 1019 cm−3, beyond which the intensity saturated. This resulted from the increase of the sharp luminescence line at 620.5 nm (site A), which has a large excitation cross section, with increasing Eu concentration in the range of low Eu concentrations; an excess Eu concentration leads to the formation of other types of optical sites with a low transfer efficiency or inactive sites. For a low Eu concentration of 3 × 1018 cm−3, all optical sites except a specific optical site corresponding to site A disappeared, and the unification of optical sites was suggested. This result is expected to be valuable to realize quantum information devices.

Journal of Applied PhysicsMay 2, 20199 citations

Saturation effects in the excitation spectra of rare-earth ions

Celso de Mello Donegá, Andries Meijerink, George Blasse

Journal of LuminescenceNov 1, 199445 citations

Photon emission enhancement of lanthanoid ions implanted in gallium nitride nanostructures

佐藤真一郎, Takao Oto, Andrew D. Greentree +7 more

Reliable single-photon sources (SPSs) that provide on-demand single photons are indispensable in the rapidly growing field of quantum technologies. To be maximally useful, they must operate at room temperature, be compatible with mature fabrication processes, and integrate seamlessly with other photonic systems. These requirements have driven research into gallium nitride (GaN)-based photon emitters and devices. Lanthanoid (Ln)-doped GaN exhibits temperature-insensitive, spectrally sharp, and stable visible/near infrared emission. Additionally, Ln-doped GaN leverages a well-developed GaN platform, enabling integration into more complex devices. However, the spontaneous emission rate of Ln ions in the 4f-4f transition is lower than that of other SPS candidates, such as quantum dots. In this study, we present two types of nanostructures that enhance the photon emission of implanted Ln ions in GaN: nanopillar structures and photonic crystal nanocavities. We discuss the mechanisms by which these nanostructures enhance photon emission and explore the future prospects of Ln-doped GaN SPS.Reliable single-photon sources (SPSs) that provide on-demand single photons are indispensable in the rapidly growing field of quantum technologies. To be maximally useful, they must operate at room temperature, be compatible with mature fabrication processes, and integrate seamlessly with other photonic systems. These requirements have driven research into gallium nitride (GaN)-based photon emitters and devices. Lanthanoid (Ln)-doped GaN exhibits temperature-insensitive, spectrally sharp, and stable visible/near infrared emission. Additionally, Ln-doped GaN leverages a well-developed GaN platform, enabling integration into more complex devices. However, the spontaneous emission rate of Ln ions in the 4f-4f transition is lower than that of other SPS candidates, such as quantum dots. In this study, we present two types of nanostructures that enhance the photon emission of implanted Ln ions in GaN: nanopillar structures and photonic crystal nanocavities. We discuss the mechanisms by which these nanostructures enhance photon emission and explore the future prospects of Ln-doped GaN SPS.

Mar 1, 20260 citations

Experimental Angular Resolved Luminescence Measurements of Eu Ions in MgF

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