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Journal of Physics Conference Series

Investigation of single defects created in crystals by laser emission and hard radiation

Evgueni F. Martynovich, V. P. Dresvyanskiy, S. V. Boychenko, Alexander L. Rakevich, С. А. Зилов, Sergei N Bagayev

Published Jan 1, 2017• 3 citations
Publisher

Abstract

The possibility of identifying radiation-created quantum systems via the characteristics of quantum trajectories of luminescence intensity measured on individual centers by confocal scanning fluorescence microscopy with the time-correlated single photon counting has been studied. Calculations of the quantum trajectories have been carried out by the density matrix method. Experimental studies have been carried out using a confocal microscope.

DOI
10.1088/1742-6596/793/1/012018

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The possibility of identifying radiation-created quantum systems via the characteristics of quantum trajectories of luminescence intensity measured on individual centers by confocal scanning fluorescence microscopy with the time-correlated single photon counting has been studied. Calculations of the quantum trajectories have been carried out by the density matrix method. Experimental studies have been carried out using a confocal microscope.
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Single nitrogen vacancy (NV) centers in diamond serve as a photonic platform for quantum sensing and computing applications. They can be created deterministically using femtosecond laser pulses. Such writing process requires high-resolution fluorescence detection with a high signal-to-noise ratio, which is accomplished by setting up a homebuilt confocal fluorescence microscope. The microscope shall monitor the fluorescence of newly formed NV centers during the writing process. In addition, it will be used to characterize the NV centers’ spin coherence times, orientation in the diamond lattice and single-emitter characteristics via the intensity correlation function g(2)(tau). In the future, this setup is also planned to be employed for STED-microscopy of twin NV centers.
We report on the systematic characterization of photoluminescence (PL) lifetimes in NV${}^{\ensuremath{-}}$ and NV0{}^{0}0 centers in 2-MeV H+{}^{+}+-implanted type Ib diamond samples by means of a time-correlated single-photon counting (TCSPC) microscopy technique. A dipole-dipole resonant energy transfer model was applied to interpret the experimental results, allowing a quantitative correlation of the concentration of both native (single substitutional nitrogen atoms) and ion-induced (isolated vacancies) PL-quenching defects with the measured PL lifetimes. The TCSPC measurements were carried out in both frontal (i.e., laser beam probing the main sample surface along the same normal direction of the previously implanted ions) and lateral (i.e., laser beam probing the lateral sample surface orthogonally with respect to the same ion implantation direction) geometries. In particular, the latter geometry allowed a direct probing of the centers lifetime along the strongly nonuniform damage profiles of MeV ions in the crystal. The extrapolation of empirical quasiexponential decay parameters allowed the systematic estimation of the mean quantum efficiency of the centers as a function of intrinsic and ion-induced defect concentration, which is of direct relevance for the current studies on the use of diamond color centers for photonic applications.