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神奈川大学工学研究所所報

Modulation of Current-voltage Characteristics of Superconducting Josephson Junctions and Superconducting Quantum Interference Devises by Two-dimensional Scanning of External Magnetic Field

明芳 中山, 晋 阿部, 哲夫 穴田

Published Nov 1, 2015• 0 citations
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We have fabricated Josephson vortex flow transistors (JVFTs) that consist of a parallel array of Josephson junctions and a control current line to apply the external magnetic field at the junctions. We observed modulations of the flow voltage with a DC current input. From these results, we estimated the mutual inductance and the self-inductance, and calculated the operation frequency of the JVFT. Next, femtosecond laser pulses modulated by an optical chopper were irradiated to the Josephson junction array. As a result, we observed an increase in the output voltage in the current-voltage characteristics, and the clear modulation of the output voltage with the same period as the optical chopping rate. These results suggest that a JFVT can operate as an optical input interface for superconducting circuits.
Aluminum Josephson junctions are the building blocks for the realization of superconducting quantum bits. Attention has been also paid to hybrid ferromagnetic Josephson junctions, which allow switching between different magnetic states, making them interesting for applications such as cryogenic memories, single-photon detectors, and spintronics. In this paper, we report on the fabrication and characterization of high-quality ferromagnetic Josephson junctions based on aluminum technology. We employed an innovative fabrication process inspired by niobium-based technology, allowing us to obtain very high-quality hybrid aluminum Josephson junctions; thus, supporting the use of ferromagnetic Josephson junctions in advanced quantum circuits. The fabrication process is described in detail and the main DC transport properties at low temperatures (current-voltage characteristic, critical current as a function of the temperature, and the external magnetic field) are reported. Here, we illustrate in detail the fabrication process, as well as the main DC transport properties at low temperatures (current-voltage characteristic, critical current as a function of the temperature, and the external magnetic field).