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Deterministic fabrication of dielectric loaded waveguides coupled to single nitrogen vacancy centers in nanodiamonds

Hamidreza Siampour, Shailesh Kumar, Sergey I. Bozhevolnyi

Published Jan 4, 2017• 0 citations
OpenAlex

Abstract

We report on the fabrication of dielectric-loaded-waveguides which are excited by single-nitrogen-vacancy (NV) centers in nanodiamonds. The waveguides are deterministically written onto the pre-characterized nanodiamonds by using electron beam lithography of hydrogen silsesquioxane (HSQ) resist on silver-coated silicon substrate. Change in lifetime for NV-centers is observed after fabrication of waveguides and an antibunching in correlation measurement confirms that nanodiamonds contain single NV-centers.

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We report on the fabrication of dielectric-loaded-waveguides which are excited by single-nitrogen-vacancy (NV) centers in nanodiamonds. The waveguides are deterministically written onto the pre-characterized nanodiamonds by using electron beam lithography of hydrogen silsesquioxane (HSQ) resist on silver-coated silicon substrate. Change in lifetime for NV-centers is observed after fabrication of waveguides and an antibunching in correlation measurement confirms that nanodiamonds contain single NV-centers.
Single-photon sources are essential for quantum technologies, supporting secure communication, quantum computing, and integrated photonic systems. Nitrogen-vacancy (NV) centers in nanodiamonds are robust emitters that operate at room temperature and can be positioned on-chip, but efficient coupling to photonic modes remains challenging. We present the design, fabrication, and experimental characterization of a silicon nitride photonic structure engineered to enhance and extract emission from NV centers. The device features a subwavelength gap between waveguides, a Bragg reflector for emission redirection, and an output waveguide for collection. Simulations guided the optimization of the geometry to increase the spontaneous emission rate through photonic confinement. Nanodiamonds were deposited into the gap using lithographic patterning and drop-casting. Fluorescence lifetime measurements confirm that the structure modifies the emission dynamics of the NV centers. The approach is compatible with scalable fabrication techniques and offers a practical route toward integrated, chip-based single-photon sources.
Diamond's nitrogen vacancy (NV) center is an optically active defect with long spin coherence times, showing great potential for both efficient nanoscale magnetometry and quantum information processing schemes. Recently, both the formation of buried 3D optical waveguides and high-quality single NVs in diamond were demonstrated using the versatile femtosecond laser-writing technique. However, until now, combining these technologies has been an outstanding challenge. In this Letter, we fabricate laser-written photonic waveguides in quantum grade diamond which are aligned to within micron resolution to single laser-written NVs, enabling an integrated platform providing deterministically positioned waveguide-coupled NVs. This fabrication technology opens the way toward on-chip optical routing of single photons between NVs and optically integrated spin-based sensing.
We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of single NV centers on sub-100-nm length scales. Secondary ion mass spectroscopy measurements facilitate depth profiling of the implanted nitrogen to provide three-dimensional characterization of the NV center spatial distribution. Measurements of NV center coherence with on-chip coplanar waveguides suggest a pathway for incorporating this scalable nanofabrication technique in future quantum applications.