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Realization of elements and circuits for quantum computing by means of superconducting tunnel junctions

C. J. P. M. Harmans, Johan E. Mooij

Published Oct 1, 2008• 0 citations
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Quantum computing based on superconducting qubits requires the understanding and control of the materials, device architecture, and operation. However, the materials for the central circuit element, the Josephson junction, have mostly been focused on using the AlO x tunnel barrier. Here, we demonstrate Josephson junctions and superconducting qubits employing two-dimensional materials as the tunnel barrier. We batch-fabricate and design the critical Josephson current of these devices via layer-by-layer stacking N layers of MoS 2 on the large scale. Based on such junctions, MoS 2 transmon qubits are engineered and characterized in a bulk superconducting microwave resonator for the first time. Our work allows Josephson junctions to access the diverse material properties of two-dimensional materials that include a wide range of electrical and magnetic properties, which can be used to study the effects of different material properties in superconducting qubits and to engineer novel quantum circuit elements in the future.
The promise of single Cooper-pair quantum circuits based on tunnel junctions for metrology and quantum information applications is severely limited by the influence of offset charges: random, slowly drifting microscopic charges inherent in many solid-state systems. By shunting a small junction with the Josephson kinetic inductance of a series array of large-capacitance tunnel junctions, thereby ensuring that all superconducting islands are connected to the circuit by at least one large junction, we have realized a new superconducting artificial atom that is totally insensitive to offset charges. Yet its energy levels manifest the anharmonic structure associated with single Cooper-pair effects, a useful component for solid-state quantum computation.
Analog superconductive components have been integrated to form a device capable of cross-correlation between wideband analog input signals. The device contains a tapped niobium delay line, tunnel-junction mixers, a lumped-element L-C resonator, and a tunnel-junction comparator. The tapped delay line is realized by a niobium stripline folded in a meander pattern on a rectangular silicon substrate. An array of Nb/Nb2O5/Pb tunnel junctions acts as a mixer to form the product of delayed samples of two carrier-offset analog signals counterpropagating along the transmission line. The resultant mixer products from the junction arrays are integrated and stored in a high-Q (≈ 600) resonator consisting of a lumped-element L-C network, tuned to the offset frequency. The low-leakage capacitor dielectric is formed from electrolytically anodized niobium. A superconductive tunnel junction imbedded in the resonator circuit is operated as a variable-threshold comparator to detect the time-integrated current stored in the resonator. Performance results from such a time-integrating correlator are presented, along with a discussion of the important design issues as they relate to analog signal processing.