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Nano Letters

Optical Line Width Broadening Mechanisms at the 10 kHz Level in Eu 3+ :Y 2 O 3 Nanoparticles

John G. Bartholomew, Karmel de Oliveira Lima, Alban Ferrier, Philippe Goldner

Published Jan 18, 2017• 50 citations
Publisher

Abstract

We identify the physical mechanisms responsible for the optical homogeneous broadening in Eu 3+:Y 2 O 3 nanoparticles to determine whether rare-earth crystals can be miniaturized to volumes less than λ 3 while preserving their appeal for quantum technology hardware. By studying how the homogeneous line width depends on temperature, applied magnetic field, and measurement time scale, the dominant broadening interactions for various temperature ranges above 3 K were characterized. Below 3 K the homogeneous line width is dominated by an interaction not observed in bulk crystal studies. These measurements demonstrate that broadening due to size-dependent phonon interactions is not a significant contributor to the homogeneous line width, which contrasts previous studies in rare-earth ion nanocrystals. Importantly, the results provide strong evidence that for the 400 nm diameter nanoparticles under study the minimum line width achieved (45 ± 1 kHz at 1.3 K) is not fundamentally limited. In addition, we highlight that the expected broadening caused by electric field fluctuations arising from surface charges is comparable to the observed broadening. Under the assumption that such Stark broadening is a significant contribution to the homogeneous line width, several strategies for reducing this line width to below 10 kHz are discussed. Furthermore, it is demonstrated that the Eu 3+ hyperfine state lifetime is sufficiently long to preserve spectral features for time scales up to 1 s. These results allow integrated rare-earth ion quantum optics to be pursued at a submicron scale and, hence, open up directions for greater scaling of rare-earth quantum technology.

DOI
10.1021/acs.nanolett.6b03949

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Homogeneous broadening and hyperfine structure of optical transitions in Pr 3 + : Y 2 SiO 5

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Contributions to the homogeneous linewidth of the $^{3}$${\mathit{H}}_{4}$(1)${\ensuremath{\rightarrow}}^{1}$${\mathit{D}}_{2}$(1) transition for the two crystallographic sites of ${\mathrm{Pr}}^{3+}$ in ${\mathrm{Y}}_{2}$${\mathrm{SiO}}_{5}$ have been investigated using photon echoes. The effects of excitation-intensity-dependent dephasing or instantaneous diffusion were systematically studied to allow accurate determination of the optical resonance widths. Homogeneous linewidths of 2.8 kHz (site 1) and 1 kHz (site 2) were measured with no applied magnetic field and with sufficiently low laser intensity to minimize the effects of instantaneous diffusion. Using the same excitation intensity, widths of 2.1 kHz (site 1) and 0.85 kHz (site 2) were obtained with an applied magnetic field of 77 G, demonstrating a significant contribution of $^{89}\mathrm{Y}$ nuclear-spin fluctuations to the zero-field homogeneous linewidth. Extrapolation to zero excitation intensity yielded optical resonance widths that were only slightly narrower than the measured values. Optically detected nuclear magnetic resonance measurements determined the hyperfine structure of the $^{3}$${\mathit{H}}_{4}$ ground state for each site; the hyperfine levels of the lowest component of the $^{1}$${\mathit{D}}_{2}$ manifold for each site were determined using photon echo nuclear double resonance. The relatively large oscillator strength of 3\ifmmode\times\else\texttimes\fi{}${10}^{\mathrm{\ensuremath{-}}7}$ for a rare-earth ion, in conjunction with long dephasing times makes this material a useful candidate for demonstration of time-domain signal processing and optical data storage.

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•Jan 1, 2014•2 citations

Investigations of spectral dynamics in rare earth ion doped crystals using high resolution laser techniques

Graf, Felix R.

Solids containing rare earth (RE) ions have attracted spectroscopists' attention since the beginning of this century.In the last 30 years, their extremely narrow spectral features in combination with the use of non linear spectroscopy have served to sensitively measure ion-solid interactions and to progressively observe narrower homogeneous linewidths.The potential for using RE ion doped crystals as optical storage materials and processors has lately been a driving force in their investigations, Here, the ratio of inhomogeneous to homogeneous linewidth is regarded as an adequate measure of storage density and can become as big as 10 7 at cryogenic temperatures.Therefore, the analysis of line broadening is of fundamental as well as applied interest.This work is concerned with the investigation of interactions of RE ions with their environment.By means of a laser with a kilohertz resolution and non-linear spectroscopy, spectral dynamics as a function of intrinsic, external electric field, or light-pulse induced perturbations are analyzed on different time scales.In the first part, the theoretical background for the spectroscopy of RE ion doped crystals is outlined.The energy levels are presented and it is shown that due to their electronic properties RE ions have spectrally narrow electronic transitions, sometimes in the sub-kHz regime.The investigations of these narrow spectral features on the seconds to minutes time scale require very stable tunable laser sources.At present, such devices are not commercially available.In the second part, the performance of ahorne built laser system is characterized using persistent spectral holes, The results show that frequency selective materials can be used as powerful tools for the high resolution Vlll Abstract spectral analysis of laser sources.Complementary to that, they give a measure for the long term evolution of the spectral holes for the particular hole burning substance.In the third part, the effect of an external electric field on RE ion doped crystals is investigated.It is shown that for these systems the electric field induced frequency shifts are fully reversible.A general theory of Stark splittings of RE doped crystals is introduced and two methods are presented which allow for the determination of the magnitude and orientation of the electric dipole moment differences with sub-degree accuracy.Finally in the last part, spectral line broadening mechanisms of RE ion doped crystals are discussed and investigated by means of two-pulse photon echoes.Through variation of the experimental parameters, a discrimination between the different contributions is partly achieved and characteristic properties for different dephasing mechanisms are presented.In combination with the measurements from the third part, quantitative predictions of the electric dipole-dipole induced broadening are carried out, which are compared to the experimental results,

•Jan 1, 1998•5 citations
We identify the physical mechanisms responsible for the optical homogeneous broadening in Eu 3+:Y 2 O 3 nanoparticles to determine whether rare-earth crystals can be miniaturized to volumes less than λ 3 while preserving their appeal for quantum technology hardware. By studying how the homogeneous line width depends on temperature, applied magnetic field, and measurement time scale, the dominant broadening interactions for various temperature ranges above 3 K were characterized. Below 3 K the homogeneous line width is dominated by an interaction not observed in bulk crystal studies. These measurements demonstrate that broadening due to size-dependent phonon interactions is not a significant contributor to the homogeneous line width, which contrasts previous studies in rare-earth ion nanocrystals. Importantly, the results provide strong evidence that for the 400 nm diameter nanoparticles under study the minimum line width achieved (45 ± 1 kHz at 1.3 K) is not fundamentally limited. In addition, we highlight that the expected broadening caused by electric field fluctuations arising from surface charges is comparable to the observed broadening. Under the assumption that such Stark broadening is a significant contribution to the homogeneous line width, several strategies for reducing this line width to below 10 kHz are discussed. Furthermore, it is demonstrated that the Eu 3+ hyperfine state lifetime is sufficiently long to preserve spectral features for time scales up to 1 s. These results allow integrated rare-earth ion quantum optics to be pursued at a submicron scale and, hence, open up directions for greater scaling of rare-earth quantum technology.
We identify and analyze dephasing mechanisms that broaden the optical transitions of rare-earth ions in randomly oriented transparent ceramics. The study examines the narrow $^{7}F_{0}\phantom{\rule{4pt}{0ex}}\ensuremath{\leftrightarrow}\phantom{\rule{4pt}{0ex}}^{5}D_{0}$ transition of Eu3+{\mathrm{Eu}}^{3+}Eu3+ dopants in a series of Y2O3{\mathrm{Y}}_{2}{\mathrm{O}}_{3}Y2​O3​ ceramic samples prepared under varying conditions. We characterize the temperature and magnetic field dependence of the homogeneous linewidth, as well as long-term spectral diffusion on time scales up to 1 s. The results highlight significant differences between samples with differing thermal treatments and Zr4+{\mathrm{Zr}}^{4+}Zr4+ additive concentrations. In particular, several distinct magnetic interactions from defect centers are observed, which are clearly distinguished from the broadening due to interactions with two-level systems and phonons. By minimizing the broadening due to the different defect centers, linewidths of the order of 4 kHz are achieved for all samples. The linewidths are limited by temperature-dependent interactions and by an interaction that is yet to be identified. Although the homogeneous linewidth can be narrowed further in these ceramic samples, the broadening is now comparable to the linewidths achieved in rare-earth-ion--doped single crystals. Thus, this work emphasizes the usefulness of studying ceramics to gain insights into dephasing mechanisms relevant to single crystals and suggests that ceramics may be an interesting alternative for applications in classical and quantum information processing.
Contributions to the homogeneous linewidth of the 3^{3}3H4{\mathit{H}}_{4}H4​(1)${\ensuremath{\rightarrow}}^{1}$D2{\mathit{D}}_{2}D2​(1) transition for the two crystallographic sites of Pr3+{\mathrm{Pr}}^{3+}Pr3+ in Y2{\mathrm{Y}}_{2}Y2​SiO5{\mathrm{SiO}}_{5}SiO5​ have been investigated using photon echoes. The effects of excitation-intensity-dependent dephasing or instantaneous diffusion were systematically studied to allow accurate determination of the optical resonance widths. Homogeneous linewidths of 2.8 kHz (site 1) and 1 kHz (site 2) were measured with no applied magnetic field and with sufficiently low laser intensity to minimize the effects of instantaneous diffusion. Using the same excitation intensity, widths of 2.1 kHz (site 1) and 0.85 kHz (site 2) were obtained with an applied magnetic field of 77 G, demonstrating a significant contribution of 89Y^{89}\mathrm{Y}89Y nuclear-spin fluctuations to the zero-field homogeneous linewidth. Extrapolation to zero excitation intensity yielded optical resonance widths that were only slightly narrower than the measured values. Optically detected nuclear magnetic resonance measurements determined the hyperfine structure of the 3^{3}3H4{\mathit{H}}_{4}H4​ ground state for each site; the hyperfine levels of the lowest component of the 1^{1}1D2{\mathit{D}}_{2}D2​ manifold for each site were determined using photon echo nuclear double resonance. The relatively large oscillator strength of 3\ifmmode\times\else\texttimes\fi{}${10}^{\mathrm{\ensuremath{-}}7}$ for a rare-earth ion, in conjunction with long dephasing times makes this material a useful candidate for demonstration of time-domain signal processing and optical data storage.
Rare Earth (RE) ion doped nanomaterials are promising candidates for a range of quantum technology applications. Among RE ions, the so-called Kramers' ions possess spin transitions in the GHz range at low magnetic fields, which allows for high-bandwidth multimode quantum storage, fast qubit operations as well as interfacing with superconducting circuits. They also present relevant optical transitions in the infrared. In particular, Er3+{\mathrm{Er}}^{3+}Er3+ has an optical transition in the telecom band, while Nd3+{\mathrm{Nd}}^{3+}Nd3+ presents a high-emission-rate transition close to 890 nm. In this paper, we measure spectroscopic properties that are of relevance to using these materials in quantum technology applications. We find the inhomogeneous linewidth to be 10.7 GHz for Er3+{\mathrm{Er}}^{3+}Er3+ and 8.2 GHz for Nd3+{\mathrm{Nd}}^{3+}Nd3+, and the excited state lifetime T1{T}_{1}T1​ to be 13.68 ms for Er3+{\mathrm{Er}}^{3+}Er3+ and $540\phantom{\rule{0.16em}{0ex}}\textmu{}\mathrm{s}$ for Nd3+{\mathrm{Nd}}^{3+}Nd3+. We study the dependence of homogeneous linewidth on temperature for both samples, with the narrowest linewidth being 379 kHz (T2=839{T}_{2}=839T2​=839 ns) for Er3+{\mathrm{Er}}^{3+}Er3+ measured at 3 K, and 62 kHz (${T}_{2}=5.14\phantom{\rule{4pt}{0ex}}\textmu{}\mathrm{s}$) for Nd3+{\mathrm{Nd}}^{3+}Nd3+ measured at 1.6 K. Further, we investigate time-dependent homogeneous linewidth broadening due to spectral diffusion and the dependence of the homogeneous linewidth on magnetic field to get additional clarity of mechanisms that can influence the coherence time. In light of our results, we discuss two applications: single qubit-state readout and a Fourier-limited single photon source.
Optical coherence and spin population dynamics in 171^{171}171Yb3+^{3+}3+:Y2_22​SiO5_55​ single crystals
171^{171}171Yb3+^{3+}3+-doped Y2_22​SiO5_55​ crystals are a promising platform for optical quantum memories in long-distance quantum communications. The relevance of this material lies in 171^{171}171Yb long optical and spin coherence times, along with a large hyperfine splitting, enabling long quantum storage over large bandwidths. Mechanisms affecting the optical decoherence are however not precisely known, especially since low-temperature measurements have so far focused on the 2 to 4 K range. In this work, we performed two- and three-pulse photon echoes and spectral hole burning to determine optical homogeneous linewidths in two 171 Yb:YSO crystals doped at 2 and 10 ppm. Experiments were performed in the 40 mK to 18 K temperature range, leading to linewidths between 320 Hz, among the narrowest reported for rare-earth ions, and several MHz. Our results show that above 6 K the homogeneous linewidth is mainly due to an elastic two-phonon process which results in a slow broadening with temperature, the homogeneous linewidth reaching only 25 kHz at 10 K. At lower temperatures, interactions with 89^{89}89Yb nuclear spin-flips, paramagnetic defects or impurities, and also Yb-Yb interactions for the higher concentrated crystal, are likely the main limiting factor to the homogeneous linewidth. In particular, we conclude that the direct effect of spin and optical excited state lifetime is a minor contribution to optical decoherence in the whole temperature range studied. Our results indicate possible paths and regimes for further decreasing the homogeneous linewidths or maintaining narrow lines at higher 171^{171}171Yb concentration.
In the last decade, the solid-state rare-earth-ion system has demonstrated increasing appeal for quantum computation. Despite this progress, two hardware limitations prevent a scalable implementation. These current limitations are the inability to miniaturise and the inability to perform single-ion qubit readout. This thesis addresses both these limitations and demonstrates that neither poses a fundamental restriction on increasing the scale of rare-earth-ion quantum computers. The challenge in miniaturising rare-earth-ion quantum hardware arises from the increases in homogeneous and inhomogeneous broadening that accompany micron-scale architectures. The success of miniaturised architectures, such as waveguides, depends on the properties of bulk ions being preserved within microns of the crystal surface. In addition, bulk ion properties must also be preserved in regions of high residual stress resultant from waveguide fabrication. The inhomogeneous and homogeneous properties of near-surface ions and ions in highly stressed environments in Pr3+:Y2SiO5 were studied via white light interferometry combined with micron resolution fluorescence microscopy. It was found that the bulk ion properties could be preserved both near the surface and in highly stressed regions close to micron-scale surface damage. The observation of excess inhomogeneous and homogeneous broadening was found to be consistent with the damage present at the crystal surface. The main outcome of the study was a set of waveguide fabrication guidelines to ensure that the appealing properties of bulk crystals can be maintained in a miniaturised architecture. The current inability to perform single-ion qubit readout is a consequence of the difficulty in isolating a single ion and lack of cyclicity in rare-earth-ion materials. Two techniques are proposed to form a solution: Stark activation and Zeeman enhanced cyclicity. When combined, these techniques offer direct readout for single-ion frequency-based quantum computing. Stark activation is designed to isolate a single rare-earth ion in a macroscopic crystal. The proposal is based on defining the condition for resonant excitation through a spatially varying electric field. A proof-of-principle experiment successfully created a 10 um absorption region within a millimetre thick crystal. In addition, the signal-to-noise ratio of the technique was characterised in experiments probing Pr3+:Y2SiO5 at the single-ion level. Future improvements to the apparatus should allow the nanometre spatial resolution and the noise level to be reduced to allow single-ion optical detection. High cyclicity is essential for high-fidelity optical readout of a single-ion qubit. Zeeman enhanced cyclicity achieves this by manipulating the hyperfine structure of the resonant crystal field levels to induce strong hyperfine selection rules. The technique is shown to be applicable to even the lowest symmetry sites. The simulated level of cyclicity in Pr3+:Y2SiO5 was greater than 99.99% by applying a 10 T field. The investigation of scalability in the rare-earth-ion system marks a movement away from the traditional ensemble-based methods in macroscopic crystals. This study required an understanding of these materials at a single-ion level and the development of high spatial resolution spectroscopic techniques. These advances extend the ability to engineer rare-earth-ion systems for applications including, but not limited to, quantum computing.
Solids containing rare earth (RE) ions have attracted spectroscopists' attention since the beginning of this century.In the last 30 years, their extremely narrow spectral features in combination with the use of non linear spectroscopy have served to sensitively measure ion-solid interactions and to progressively observe narrower homogeneous linewidths.The potential for using RE ion doped crystals as optical storage materials and processors has lately been a driving force in their investigations, Here, the ratio of inhomogeneous to homogeneous linewidth is regarded as an adequate measure of storage density and can become as big as 10 7 at cryogenic temperatures.Therefore, the analysis of line broadening is of fundamental as well as applied interest.This work is concerned with the investigation of interactions of RE ions with their environment.By means of a laser with a kilohertz resolution and non-linear spectroscopy, spectral dynamics as a function of intrinsic, external electric field, or light-pulse induced perturbations are analyzed on different time scales.In the first part, the theoretical background for the spectroscopy of RE ion doped crystals is outlined.The energy levels are presented and it is shown that due to their electronic properties RE ions have spectrally narrow electronic transitions, sometimes in the sub-kHz regime.The investigations of these narrow spectral features on the seconds to minutes time scale require very stable tunable laser sources.At present, such devices are not commercially available.In the second part, the performance of ahorne built laser system is characterized using persistent spectral holes, The results show that frequency selective materials can be used as powerful tools for the high resolution Vlll Abstract spectral analysis of laser sources.Complementary to that, they give a measure for the long term evolution of the spectral holes for the particular hole burning substance.In the third part, the effect of an external electric field on RE ion doped crystals is investigated.It is shown that for these systems the electric field induced frequency shifts are fully reversible.A general theory of Stark splittings of RE doped crystals is introduced and two methods are presented which allow for the determination of the magnitude and orientation of the electric dipole moment differences with sub-degree accuracy.Finally in the last part, spectral line broadening mechanisms of RE ion doped crystals are discussed and investigated by means of two-pulse photon echoes.Through variation of the experimental parameters, a discrimination between the different contributions is partly achieved and characteristic properties for different dephasing mechanisms are presented.In combination with the measurements from the third part, quantitative predictions of the electric dipole-dipole induced broadening are carried out, which are compared to the experimental results,