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Technical digest - International Electron Devices Meeting/Technical digest

Narrow-channel-MOSFET having Si-dots for high-rate generation of random numbers

Ryohji Ohba, S. Yasuda, Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita

Published Mar 22, 2004• 2 citations
Publisher

Abstract

We propose a new noise source device utilizing a narrow-channel-MOSFET having Si multi-dots to realize the high-speed random number generation that is required for network security. We generate high-quality random numbers at a generation rate of 25 kbits/s using the Si dot MOSFET. We also present a guideline for designing Si dot MOSFETs for increased generation rate.

DOI
10.1109/iedm.2003.1269388

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We propose a new noise source device utilizing a narrow-channel-MOSFET having Si multi-dots to realize the high-speed random number generation that is required for network security. We generate high-quality random numbers at a generation rate of 25 kbits/s using the Si dot MOSFET. We also present a guideline for designing Si dot MOSFETs for increased generation rate.
Generating high-speed, verifiable random numbers is a fundamental requirement for cryptography, large-scale stochastic simulations, and secure quantum communication. Here, we present a robust quantum random number generator that utilizes the spatial distribution of quantum fluctuations captured by an electron-multiplying charge-coupled device operated in high-speed kinetic mode. Through rigorous detector calibration and shot-noise analysis, we characterize the spatial quantum noise obtained from the spatial intensity fluctuations of the coherent states of light. Such quantum noise serves as a high-entropy source, enabling an instantaneous random bit generation rate of 5.92 Gbps without algorithmic randomness extraction in the present configuration. The sustained output rate is, however, limited to 7.5 Mbps by the bandwidth of the serial electronic readout. The generated sequences successfully pass the NIST SP 800-22 and Marsaglia Diehard statistical test suites, confirming the high quality and unpredictability of the entropy source.
The need for hardware random number generators (HRNGs) that can be integrated in a silicon (Si) complementary-metal–oxide–semiconductor (CMOS) platform has become increasingly important in the era of the Internet-of-Things (IoT). Si MOSFETs exhibiting random telegraph signals (RTSs) have been considered as such a candidate for HRNG, though its application has been hindered by RTS’s variability and uncontrollable, unpredictable characteristics. In this paper, we report the generation and randomness evaluation of random numbers from RTSs in a Si single electron pump (SEP) device at room temperature. SEP devices are known to consistently produce RTSs due to a quantum dot electrically defined by multi-layer polycrystalline Si gates. Using RTSs observed in our devices, random numbers were extracted by a classifier supported by supervised learning, where part of data was used to train the classifier before it is applied to the rest to generate random numbers. The random numbers generated from RTSs were used as inputs for the Monte Carlo method to calculate the values of π, and the distribution was compared against the result obtained from the Mersenne Twister, a representative pseudo-random number generator (PRNG), under the same condition. π was estimated more than 80 000 times, and the distribution of the estimated values has a central value of 3.14 with a variance of 0.273, which is only twice as large as the result from PRNG. Our result paves a way to fully electronic CMOS compatible HRNGs that can be integrated in a modern system-on-a-chip in IoT devices.
Abstract A quantum random number generator (QRNG) as a genuine source of randomness is essential in many applications, such as number simulation and cryptography. Recently, a source-independent quantum random number generator (SI-QRNG), which can generate secure random numbers with untrusted sources, has been realized. However, the measurement loopholes of the trusted but imperfect devices used in SI-QRNGs have not yet been fully explored, which will cause security problems, especially in high-speed systems. Here, we point out and evaluate the security loopholes of practical imperfect measurement devices in SI-QRNGs. We also provide corresponding countermeasures to prevent these information leakages by recalculating the conditional minimum entropy and adding a monitor. Furthermore, by taking into account the finite-size effect, we show that the influence of the afterpulse can exceed that of the finite-size effect with the large number of sampled rounds. Our protocol is simple and effective, and it promotes the security of SI-QRNG in practice as well as the compatibility with high-speed measurement devices, thus paving the way for constructing ultrafast and security-certified commercial SI-QRNG systems.
A random number generation approach comprising a silicon nanocrystals LED (Si-NCs LED), silicon single photon avalanche photodiode (Si SPAD) and a field-programmable gate array (FPGA) is introduced. The Si-NCs LED is the source of entropy with photon emission in the visible range detectable by silicon detectors allowing the fabrication of an all-silicon-based device. The proposed quantum random number generator (QRNG) is robust against variations of the internal and external parameters such as aging of the components, changing temperature, the ambient interferences and the silicon detector artifacts. The raw data show high quality of randomness and passed all the statistical tests in National Institute of Standards and Technology (NIST) tests suite without the application of a post-processing algorithm. The efficiency of random number generation is 4-bits per detected photon.