International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Efficient modeling of Coulomb interaction effect on exciton in crystal-phase nanowire quantum dot
Masoomeh Taherkhani, Niels Gregersen, Jesper Mørk, Dara P. S. McCutcheon, Morten Willatzen
Abstract
The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates [1], [2].